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Power Grid Analysis in VLSI Designs - SERC

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<strong>in</strong>stantaneous IR drop. However, there is no good analysis methodology <strong>in</strong> place to analyze thisphenomenon. Ad hoc decoupl<strong>in</strong>g plann<strong>in</strong>g and on chip <strong>in</strong>tr<strong>in</strong>sic decoupl<strong>in</strong>g capacitance helpsto conta<strong>in</strong> this noise but there is no guarantee. This work also applies average togglecomputation approach to compute <strong>in</strong>stantaneous IR drop analysis for designs. Instantaneous IRdrop is also known as dynamic IR drop or power supply noise. We are propos<strong>in</strong>g cellcharacterization methodology for standard cells. This data is used to build power grid model ofthe design. F<strong>in</strong>ally, the power network is solved to compute <strong>in</strong>stantaneous IR drop.Leakage <strong>Power</strong> M<strong>in</strong>imization has forced design teams to do complex power gat<strong>in</strong>g – multilevel MTCMOS usage <strong>in</strong> <strong>Power</strong> <strong>Grid</strong>. This puts additonal analysis challenge for <strong>Power</strong> <strong>Grid</strong> <strong>in</strong>terms of ON/OFF sequenc<strong>in</strong>g and noise <strong>in</strong>jection due to it. This work expla<strong>in</strong>s the state of arthere and highlights some of the issues and trade offs us<strong>in</strong>g MTCMOS logic. It further suggestsa simple approach to quickly access the impact of MTCMOS gates <strong>in</strong> <strong>Power</strong> <strong>Grid</strong> <strong>in</strong> terms ofpeak currents and IR drop. Alternatively, the approach suggested also helps <strong>in</strong> MTCMOS gateoptimization. Early leakage optimization overhead can be computed us<strong>in</strong>g this approach.12

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