SAM – saturable absorber mirror

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Chip area:Chip thickness:Front side protection:Back side:Mount:5 mm x 5 mm400 µm semi <strong>–</strong> insulating GaAs,other thickness on requestAR coatingpolished and AR coated• unmounted• 12.7 mm ∅• 25.0 mm ∅• fiber coupled (SMF, PM)Cu-Mount ∅ 12.7 mm with ∅ 4 mm hole:Cu-Mount ∅ 25.0 mm with ∅ 4 mm hole:Spectral transmission / absorption:SA 1020-40-XSA 1064-40-XSA 2000-1-XSeongKyeong Photonics 6 info@skphotonics.com
Page 1: SAM ® - saturable absorber mirrorp
Page 9 and 10: Non-saturable losses are caused by
Page 11 and 12: Pulseduration∆tGaussianbandwidth
Page 13 and 14: Refractive index > GaAs | AlAs | Al
Page 15 and 16: The saturable absorber layer consis
Page 17 and 18: λ resonance wavelength of the inte
Page 19 and 20: with∆λ bandwidth FWHM (full widt
Page 21 and 22: RSAM at λ = 1064 nm with front mir
Page 23 and 24: The main applications for SANOS are
Page 25 and 26: T(t) = T max exp(-t/τ )]withT(t)T
Page 27: The absorbance A of the SA consists

SAM – saturable absorber mirror

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