Study of radiation damage in silicon detectors for high ... - F9

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90 6. Inuence of Bias VoltageFigure 6.1: First order (red line) and second order (black line) ts for diodes U3A and U3B(unbiased during irradiation and storage). N eff = eq versus heating time at 60 C is displayed.Sam g C g Y k Y (60 C) 2 /ndf kY lin(60C)ple [10 ;2 /cm] [10 ;2 /cm] [10 ;6 /s] [10 ;18 cm 3 /s] 1 st /2 nd [10 ;7 /cms]1 st o. 2 nd o. 1 st o. 2 nd o. 1 st or. 2 nd or. orderU3A 2.4 2.3 4.8 5.5 8.0 4.6 2.1 / 0.4 3.2U3B 2.2 2.1 5.0 5.8 8.4 4.5 2.3 / 0.5 3.4Table 6.1: Fit parameters for reverse annealing of diodes U3A and U3B using rst and secondorder models. Generation rates for defects constant in time (g C ) and for those responsible forreverse annealing (g Y ) are given together with reverse annealing constants k Y 1and kY 2 . 2 /ndfis given for both ts to compare agreement of both models with measured results. Reverseannealing constant kYlin was obtained by the linear t of the ansatz 4.10 during the initial stageof reverse annealing.the treatment, the better agreement of the second order expression cannot be attributedto partial bias. This indicates that another process becomes signicant at the late stageof reverse annealing, with properties still to be determined. It is however not importantfor the LHC operation, where only the initial stage of reverse annealing will take place.The slope of the linear t at the initial stage of reverse annealing at 60 C kY lin (20 C) =(12:4 2) 10 ;10 =cm s can be compared with the slope for unbiased diodes, annealed at20 C kY lin (60 C)=(3:3 0:15) 10 ;7 =cm s (table 4.6). The comparison shows about 270times faster reverse annealing at 60 C compared to 20 C, consistent with an activation
6. Inuence of Bias Voltage 91energy of 1:17 0:04 eV (eq. 4.5). While it is far from 1:3 0:04 eV [13, 14, 15], whichwould yield a factor of about 500, it agrees well with 1.18 eV, reported by Z.Lietal.[53]6.1.2 Comparison of Biased and Unbiased SamplesFigure 6.2: Comparison time development ofN eff for biased (B3, D3, I3) and unbiased (U3A,U3B) samples. All samples were kept under same conditions except for bias voltage.Most suitable for comparison with samples U3 are diodes I3, D3 and B3 (g. 6.2).They were irradiated to the same uence with the same neutron ux and treated identicallyexcept for the bias voltage and storage temperature before the warm-up treatment(table. 4.3). Comparison of plateaus after benecial annealing shows that values ofN eff = eq are about a factor 2 smaller for unbiased samples. Reverse annealing parameters(g. 4.2, 4.3 and table 4.4) show that the introduction rate of the defects, responsiblefor reverse annealing (g Y ), is comparable for both biasing conditions. The reaction constantsk Y and kYlin are however about twice larger for unbiased samples. This could be
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
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Page 71 and 72: 4. Time Development ofDefects 63Fig
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Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
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Page 97: 6Inuence of Bias VoltageIt was a ge
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Page 113 and 114: 7Comparison with Other GroupsWhile
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Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
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Page 147 and 148: 10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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