Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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90 6. Inuence <strong>of</strong> Bias VoltageFigure 6.1: First order (red l<strong>in</strong>e) and second order (black l<strong>in</strong>e) ts <strong>for</strong> diodes U3A and U3B(unbiased dur<strong>in</strong>g ir<strong>radiation</strong> and storage). N eff = eq versus heat<strong>in</strong>g time at 60 C is displayed.Sam g C g Y k Y (60 C) 2 /ndf kY l<strong>in</strong>(60C)ple [10 ;2 /cm] [10 ;2 /cm] [10 ;6 /s] [10 ;18 cm 3 /s] 1 st /2 nd [10 ;7 /cms]1 st o. 2 nd o. 1 st o. 2 nd o. 1 st or. 2 nd or. orderU3A 2.4 2.3 4.8 5.5 8.0 4.6 2.1 / 0.4 3.2U3B 2.2 2.1 5.0 5.8 8.4 4.5 2.3 / 0.5 3.4Table 6.1: Fit parameters <strong>for</strong> reverse anneal<strong>in</strong>g <strong>of</strong> diodes U3A and U3B us<strong>in</strong>g rst and secondorder models. Generation rates <strong>for</strong> defects constant <strong>in</strong> time (g C ) and <strong>for</strong> those responsible <strong>for</strong>reverse anneal<strong>in</strong>g (g Y ) are given together with reverse anneal<strong>in</strong>g constants k Y 1and kY 2 . 2 /ndfis given <strong>for</strong> both ts to compare agreement <strong>of</strong> both models with measured results. Reverseanneal<strong>in</strong>g constant kYl<strong>in</strong> was obta<strong>in</strong>ed by the l<strong>in</strong>ear t <strong>of</strong> the ansatz 4.10 dur<strong>in</strong>g the <strong>in</strong>itial stage<strong>of</strong> reverse anneal<strong>in</strong>g.the treatment, the better agreement <strong>of</strong> the second order expression cannot be attributedto partial bias. This <strong>in</strong>dicates that another process becomes signicant at the late stage<strong>of</strong> reverse anneal<strong>in</strong>g, with properties still to be determ<strong>in</strong>ed. It is however not important<strong>for</strong> the LHC operation, where only the <strong>in</strong>itial stage <strong>of</strong> reverse anneal<strong>in</strong>g will take place.The slope <strong>of</strong> the l<strong>in</strong>ear t at the <strong>in</strong>itial stage <strong>of</strong> reverse anneal<strong>in</strong>g at 60 C kY l<strong>in</strong> (20 C) =(12:4 2) 10 ;10 =cm s can be compared with the slope <strong>for</strong> unbiased diodes, annealed at20 C kY l<strong>in</strong> (60 C)=(3:3 0:15) 10 ;7 =cm s (table 4.6). The comparison shows about 270times faster reverse anneal<strong>in</strong>g at 60 C compared to 20 C, consistent with an activation