Study of radiation damage in silicon detectors for high ... - F9

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86 5. Dose Rate DependenceFigure 5.5: Time development ofreverse bulk current at60 C for diodes K0, K1 and K3. Thebulk current generation constant (eq. 2.50) normalised to 20 C is used to compare dierentsamples.Sample E [10 ;17 Acm ;1 ] E [h] L [10 ;17 Acm ;1 ] L [10 4 h]K3 1.4 0.7 0.32 2.K0 1.1 1.8 0.26 6.0Table 5.3: Results of annealing of bulk current. Errors on E , E and L are about 20% andon L around 50%. For sample K1 the t does not converge properly. The systematic error ofdosimetry is not included in the given errors.5.4 ConclusionsInuence of the ux on radiation induced bulk damage has been studied for 1 MeV neutronequivalent uxes from 210 8 n/cm 2 s to about 5 10 15 n/cm 2 s. No systematic eect that
5. Dose Rate Dependence 87could be correlated to ux has been observed in this range neither in the eective dopingconcentration nor in the reverse bulk current. Results from [52] show thatachange occursat uxes around 10 7 ; 10 9 cm ;2 s ;1 for irradiations with heavier elements (Br, Si andC) and that this threshold is increasing with decreasing mass number. For neutrons onewould therefore expect a higher threshold, but even up to 5 10 15 n/cm 2 s no eect wasobserved. It thus seems safe to extrapolate the damage induced by available neutronsources to the expected ux at LHC of about 10 6 n/cm 2 s.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
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Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 111 and 112: 6. Inuence of Bias Voltage 103Figur
Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 127 and 128: 9. Povzetek doktorskega dela 1199.2
Page 129 and 130: 9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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