Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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86 5. Dose Rate DependenceFigure 5.5: Time development <strong>of</strong>reverse bulk current at60 C <strong>for</strong> diodes K0, K1 and K3. Thebulk current generation constant (eq. 2.50) normalised to 20 C is used to compare dierentsamples.Sample E [10 ;17 Acm ;1 ] E [h] L [10 ;17 Acm ;1 ] L [10 4 h]K3 1.4 0.7 0.32 2.K0 1.1 1.8 0.26 6.0Table 5.3: Results <strong>of</strong> anneal<strong>in</strong>g <strong>of</strong> bulk current. Errors on E , E and L are about 20% andon L around 50%. For sample K1 the t does not converge properly. The systematic error <strong>of</strong>dosimetry is not <strong>in</strong>cluded <strong>in</strong> the given errors.5.4 ConclusionsInuence <strong>of</strong> the ux on <strong>radiation</strong> <strong>in</strong>duced bulk <strong>damage</strong> has been studied <strong>for</strong> 1 MeV neutronequivalent uxes from 210 8 n/cm 2 s to about 5 10 15 n/cm 2 s. No systematic eect that