Study of radiation damage in silicon detectors for high ... - F9

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84 5. Dose Rate DependenceFigure 5.2: Introduction rate of stable defects g C versus irradiation ux.Figure 5.3: Introduction rate of defects, activated during the reverse annealing (g Y ), versusirradiation ux.
5. Dose Rate Dependence 85Figure 5.4: Reverse annealing constant k Y 2versus irradiation ux.errors on dosimetry. SA and P0 samples also have a larger error on FDV at late stages ofreverse annealing. Its source is extrapolation of C ;2 versus Vcurve to the plateau value.This was necessary because of breakdown below full depletion voltage.5.3 Results on Reverse CurrentStudy of the leakage current could unfortunately not be performed on the full range of doserates. The reason were problems with guard ring connections that occurred with samplesSA and P0. With guard rings not connected it was not possible to separate the bulkgeneration current from surface current generated on the edge. Since its contribution canbe much larger than the bulk generation current (see g. 3.13), those samples are uselessfor comparisons of the reverse current. Thus only samples K0, K1 and K3, irradiatedwith neutron uxes of 2:310 12 n/cm 2 s, 4:210 11 n/cm 2 sand2:110 9 n/cm 2 s are shown ingure 5.5. The reverse currents were tted according to eq. 4.12 and results are given intable 5.3. Some measured points with bad guard ring connection for sample K1 on thatgure indicate the variability ofthesurface current contribution.Though one can notice some dierence among the samples it is attributed to themeasurement error. It is also not correlated with the irradiation ux.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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Page 41 and 42: 2. Operation and Radiation Damage o
Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
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Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91: 5. Dose Rate Dependence 83Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 135 and 136: 9. Povzetek doktorskega dela 127Cep
Page 137 and 138: 9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 135Sli
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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Study of radiation damage in silicon detectors for high ... - F9

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