Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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5. Dose Rate Dependence 83Figure 5.1: Time development <strong>of</strong>N eff at 60 C <strong>for</strong> <strong>detectors</strong>, irradiated with dierent neutronuxes.Sample g C [10 ;2 cm ;1 ] g Y [10 ;2 cm ;1 ] k Y 2(60 C) [10 ;18 cm 3 s ;1 ]SA1 2.9 4.0 3.1SA2 2.4 5.5 1.5K3 3.0 6.0 1.5K1 2.4 5.6 1.7K0 2.6 4.8 1.5P0A 2.3 5.1 1.5P0B 2.3 4.9 1.6Table 5.2: Results <strong>of</strong> the second order t. Generation rates <strong>for</strong> defects constant <strong>in</strong> time (g C )and those responsible <strong>for</strong> reverse anneal<strong>in</strong>g (g Y ) are given together with the reverse anneal<strong>in</strong>gconstant k Y 2 . Errors on kY 2 are about 5%. Errors on kY 2 and g Y are larger <strong>for</strong> SA1 and SA2samples due to the low number <strong>of</strong> measurement po<strong>in</strong>ts on the slope and breakdown below FDVat late stage <strong>of</strong> reverse anneal<strong>in</strong>g.