Study of radiation damage in silicon detectors for high ... - F9

5. Dose Rate Dependence 83Figure 5.1: Time development ofN eff at 60 C for detectors, irradiated with dierent neutronuxes.Sample g C [10 ;2 cm ;1 ] g Y [10 ;2 cm ;1 ] k Y 2(60 C) [10 ;18 cm 3 s ;1 ]SA1 2.9 4.0 3.1SA2 2.4 5.5 1.5K3 3.0 6.0 1.5K1 2.4 5.6 1.7K0 2.6 4.8 1.5P0A 2.3 5.1 1.5P0B 2.3 4.9 1.6Table 5.2: Results of the second order t. Generation rates for defects constant in time (g C )and those responsible for reverse annealing (g Y ) are given together with the reverse annealingconstant k Y 2 . Errors on kY 2 are about 5%. Errors on kY 2 and g Y are larger for SA1 and SA2samples due to the low number of measurement points on the slope and breakdown below FDVat late stage of reverse annealing.