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Study of radiation damage in silicon detectors for high ... - F9

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82 5. Dose Rate DependenceSample V 0 FD [V] T eq [n/cm 2 s] eq [n/cm 2 ] bias [V]SA1 12 -10 C + 2:2 10 8 1:3 10 14 0SA2 12 -10 C + 2:2 10 8 1:3 10 14 150 K3 6 5 C 1:9 10 9 1: 10 14 200K1 32 5 C 3:7 10 11 1: 10 14 200K0 32 5 C 1:6 10 12 1: 10 14 200P0A 8 -5 C + 5 10 15 1:1 10 14 0 P0B 8 -5 C + 5 10 15 1:1 10 14 200 Table 5.1: List <strong>of</strong> diodes used <strong>in</strong> the study <strong>of</strong> dose rate <strong>in</strong>uence. Full depletion voltage be<strong>for</strong>eir<strong>radiation</strong>, ir<strong>radiation</strong>/storage temperature, ir<strong>radiation</strong> ux and uence normalised to 1 MeVneutrons and bias voltage are given <strong>for</strong> each sample. Thickness <strong>of</strong> samples was 3005 m.+ Sample was heated to 20 C several times <strong>for</strong> a few hour periods to repair brokenbias/measurement l<strong>in</strong>es. Bias<strong>in</strong>g <strong>of</strong> SA2 was lost several times dur<strong>in</strong>g the rst 6 months due to lost contact. Whenheat<strong>in</strong>g to 60 C started, 200 V bias was used. Sample P0A was biased to 350 V <strong>for</strong> about rst 30 m<strong>in</strong>, then the contact was lost. Sample P0B was not biased <strong>for</strong> the rst few days.were kept at -10 C and -5 C, respectively, as <strong>in</strong>dicated <strong>in</strong> table 5.1 37 .Development <strong>of</strong>N eff and reverse current <strong>of</strong> samples was compared to observe possibledierences due to a dose rate eect. Results <strong>of</strong> the study are presented <strong>in</strong> the follow<strong>in</strong>gsections.5.2 Results on NeffTime development <strong>of</strong>N eff <strong>for</strong> samples listed <strong>in</strong> table 5.1 after start <strong>of</strong> heat<strong>in</strong>g to 60 Cisshown <strong>in</strong> gure 5.1. The second order ansatz 4.7 was used <strong>in</strong> the t. The second orderparametrisation was chosen because it describes the late stage <strong>of</strong> reverse anneal<strong>in</strong>g betterthan the rst order one. The uence dependence <strong>of</strong> the time constant, that is the ma<strong>in</strong>dierence between the two models, was not important <strong>in</strong> this case, because all samples,used <strong>for</strong> the study <strong>of</strong> the ux eect, were irradiated to similar uences (table 5.1). Results<strong>of</strong> the ts are given <strong>in</strong> table 5.2 and compared <strong>in</strong> gures 5.2 to 5.4.Neither plots <strong>of</strong> N eff time development dur<strong>in</strong>g reverse anneal<strong>in</strong>g nor t resultsshow any systematic variations that could be correlated with ux. Discrepancies betweendierent samples can be attributed to dierent bias<strong>in</strong>g conditions (see chapter 6) and37In this time samples were not yet fully annealed and thus storage had negligible <strong>in</strong>uence on study<strong>of</strong> reverse anneal<strong>in</strong>g.

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