Study of radiation damage in silicon detectors for high ... - F9

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PovzetekSevalne poskodbe v siliciju bodo znatno vplivale na delovanje verteks detektorjevv bodocih eksperimentih na velikem hadronskem trkalniku LHC. Pricujoce delo obsegarezultate obsevanj visoko upornostnih p + -n-n + diod v reaktorju TRIGA Instituta JozefStefan pri Ljubjani. Obsevalne uence so bile ekvivalentne 10 13 do 2.510 14 n/cm 2 1MeV nevtronom. Pod nadzorovanimi pogoji sem spremljal razvoj efektivne koncentracijedopantov in zapornega toka tako med kot tudi po obsevanju.Meritvepocasnega razvoja efektivne koncentracije dopantov so bile namenjene dolocanjudinamike odgovorne reakcije. Dobljeni rezultati meritev diod, ki so bile hranjene pri 20 Cbrez napajalne napetosti, so dal1 prepricljive dokaze, da lahko razvoj vsaj v zacetni fazipopisemo s procesom prvega reda.Odvisnost tvorjenja poskodb od nevtronskega uksa sem preverili za ukse med 210 8in 510 15 n/cm 2 s. V raziskanem podrocju med vzorci ni bilo opaznih razlik, ki bi jihlahko pripisali razlikam v uksu.V okviru dela je bil odkrit vpliv napajalne napetosti na casovni razvoj poskodb. Vplivse odraza kot razlika v efektivni koncentraciji dopantov. Ta je za vzorce pod polnodeplecijsko napetostjo po koncanem okrevanju priblizno dvakrat vecja kot za vzorce breznapetosti. Upadanje razlike po izklopu napetosti lahko popisemo z dvema eksponentnimafunkcijama s casovnima konstantama okoli 40 ur in 6 tednov pri 20 C. Rezultati kazejo,da na razvoj zapornega toka prisotnost napajalne napetosti nima zaznavnega vpliva.Kljucne besede: silicijevi detektorji, sevalne poskodbe, nevtroni, LHCPACS 29.40.Gx, 29.40.Wk
Contents1. Introduction 52. Operation and Radiation Damage of Silicon Detectors 112.1 Basics of Operation of Silicon Detectors . . . . . . . . . . . . . . . . . . . . 112.1.1 p ; n Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122.1.2 Inuence of External Voltage . . . . . . . . . . . . . . . . . . . . . 152.1.3 The Fermi Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162.1.4 Diusion Current from the Neutral Bulk . . . . . . . . . . . . . . . 172.1.5 Generation Current in Depleted Region . . . . . . . . . . . . . . . . 192.1.6 N eff from C/V Measurements . . . . . . . . . . . . . . . . . . . . . 222.2 Radiation Induced Defects . . . . . . . . . . . . . . . . . . . . . . . . . . . 242.2.1 Defect Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242.2.2 Comparing Radiation Damage Measurements . . . . . . . . . . . . 252.2.3 Types of Defects . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272.3 Eects on Bulk Properties . . . . . . . . . . . . . . . . . . . . . . . . . . . 272.3.1 Leakage Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282.3.2 Eective Dopant Concentration . . . . . . . . . . . . . . . . . . . . 292.3.3 Charge Collection Eciency . . . . . . . . . . . . . . . . . . . . . . 312.4 Time Evolution of Defects . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.4.1 Time Evolution of Leakage Current . . . . . . . . . . . . . . . . . . 332.4.2 Time Evolution of N eff . . . . . . . . . . . . . . . . . . . . . . . . . 343. Irradiation Facility 353.1 The Reactor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 353.2 Selection of Irradiation Site . . . . . . . . . . . . . . . . . . . . . . . . . . 353.3 Irradiation Chamber . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 373.3.1 Channel Description . . . . . . . . . . . . . . . . . . . . . . . . . . 373.3.2 Measurement Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . 373.3.3 Neutron Spectrum and Dosimetry . . . . . . . . . . . . . . . . . . . 383.4 Irradiation Channel F19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413.4.1 Channel Description . . . . . . . . . . . . . . . . . . . . . . . . . . 413.4.2 Neutron Spectrum and Dosimetry . . . . . . . . . . . . . . . . . . . 421
Page 1: UNIVERSITY OF LJUBLJANAFACULTY OF M
Page 5: Najprej gre moja zahvala delovnima
Page 10 and 11: 3.5 Measurement Setup, Methods and
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17 and 18: 1. Introduction 9R(cm)Z(cm)Figure 1
Page 19 and 20: 2Operation and Radiation Damage of
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
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Page 47 and 48: 3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
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3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
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4Time Development of DefectsIn this
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4. Time Development ofDefects 57* F
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4. Time Development ofDefects 59val
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4. Time Development ofDefects 61for
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4. Time Development ofDefects 63Fig
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4. Time Development ofDefects 79An
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5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 83Figure 5.
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5. Dose Rate Dependence 85Figure 5.
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5. Dose Rate Dependence 87could be
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6Inuence of Bias VoltageIt was a ge
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6. Inuence of Bias Voltage 91energy
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6. Inuence of Bias Voltage 93Figure
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6. Inuence of Bias Voltage 99that t
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6. Inuence of Bias Voltage 101(abou
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6. Inuence of Bias Voltage 103Figur
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7Comparison with Other GroupsWhile
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7. Comparison with Other Groups 107
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8ConclusionsA systematic study of r
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8. Conclusions 111Implications for
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9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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