Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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4. Time Development <strong>of</strong>Defects 79An extensive study <strong>of</strong> reverse anneal<strong>in</strong>g was per<strong>for</strong>med to unveil the nature <strong>of</strong> theresponsible process. While from most <strong>of</strong> the samples no conclusive evidence could beobta<strong>in</strong>ed due to bias-eect <strong>in</strong>terference (see chapter 6), a dedicated set <strong>of</strong> 8 unbiasedsamples annealed at 20 C is clearly show<strong>in</strong>g a l<strong>in</strong>ear dependence <strong>of</strong> <strong>in</strong>itial slope <strong>of</strong> N effreverse anneal<strong>in</strong>g on ir<strong>radiation</strong> uence. Thus at least dur<strong>in</strong>g the <strong>in</strong>itial stage <strong>of</strong> thereverse anneal<strong>in</strong>g, relevant <strong>for</strong> the LHC operation, the reaction dynamics is described bya rst order process. Further studies are however necessary to determ<strong>in</strong>e the <strong>in</strong>uence <strong>of</strong>reverse bias on the reverse anneal<strong>in</strong>g constants.Reverse leakage current shows similar short-term anneal<strong>in</strong>g behaviour to that <strong>of</strong>N eff . In agreement with results from previous sources [46, 21, 19, 14, 18] no reverse anneal<strong>in</strong>gwas observed. Long term anneal<strong>in</strong>g at 60 Chowever does not lead to the expectedsaturation <strong>of</strong> reverse current, but shows cont<strong>in</strong>uous anneal<strong>in</strong>g with an eective logarithmictime dependence. The true nature <strong>of</strong> this eect is at the present not understood.