Study of radiation damage in silicon detectors for high ... - F9

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72 4. Time Development of DefectsFigure 4.12: Comparison of short-term annealing of planar (I3, D3) and MESA (R4, R3)samples at 5 C (I3, R4) and 15 C (D3, R3).Sample process No. of GR V 0 FD [V] T eq [n/cm 2 s] eq [n/cm 2 ]R3 mesa 0 100 15 C 1:8 10 9 4:4 10 13R4 mesa 0 110 5 C 1:8 10 9 4:2 10 13Table 4.7: List of MESA processed diodes used in the study of fast annealing of N eff . Processingtype, number of guard rings, full depletion voltage before irradiation, irradiation/storagetemperature, irradiation ux and uence normalised to 1MeV neutrons are given for each sample.Thickness of samples was 3005 m.Sample T [ C] g 0 [10 ;2 cm ;1 ] g 1 [10 ;2 cm ;1 ] 1 [h] g 2 [10 ;2 cm ;1 ] 2 [h]R3 15 C 2.2 4.7 3.5 1.6 370R4 5 C 4.2 5.1 2.8 2.2 21Table 4.8: List of MESA samples with their irradiation temperatures and values of the tparameters according to eq. 4.3.conditions are listed in table 4.7. Sample R4 was irradiated under the same conditions assample I3 and sample R3 same as sample D3 (compare with table 4.1).Short term annealing was tted with expression 4.3 and results of the t are given intable 4.8. Comparison of the fast annealing of planar and mesa samples is shown in gure
4. Time Development ofDefects 73Figure 4.13: Comparison of N eff development of planar (I3,D3) and MESA (R4,R3) samplesafter heating to 60 C.Figure 4.14: FDV comparison of diodes I3 (planar) and R4 (MESA) during the irradiation at5 C.4.12. Together with gure 4.14 it shows that in the initial stage of the annealing a 20-30% dierence in the eective doping concentration develops, that persists also throughlatter annealing and reverse annealing (gure 4.13). This dierence however can not beattributed to the initial dierence in N eff that reected in about 80 V dierence in FDVbefore irradiation. As shown in gure 4.14, the dierence in initial FDV disappearedduring the irradiation. This could be a consequence of shallow donor removal.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
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Page 47 and 48: 3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
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Page 71 and 72: 4. Time Development ofDefects 63Fig
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Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 125Sli
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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