Study of radiation damage in silicon detectors for high ... - F9

72 4. Time Development of DefectsFigure 4.12: Comparison of short-term annealing of planar (I3, D3) and MESA (R4, R3)samples at 5 C (I3, R4) and 15 C (D3, R3).Sample process No. of GR V 0 FD [V] T eq [n/cm 2 s] eq [n/cm 2 ]R3 mesa 0 100 15 C 1:8 10 9 4:4 10 13R4 mesa 0 110 5 C 1:8 10 9 4:2 10 13Table 4.7: List of MESA processed diodes used in the study of fast annealing of N eff . Processingtype, number of guard rings, full depletion voltage before irradiation, irradiation/storagetemperature, irradiation ux and uence normalised to 1MeV neutrons are given for each sample.Thickness of samples was 3005 m.Sample T [ C] g 0 [10 ;2 cm ;1 ] g 1 [10 ;2 cm ;1 ] 1 [h] g 2 [10 ;2 cm ;1 ] 2 [h]R3 15 C 2.2 4.7 3.5 1.6 370R4 5 C 4.2 5.1 2.8 2.2 21Table 4.8: List of MESA samples with their irradiation temperatures and values of the tparameters according to eq. 4.3.conditions are listed in table 4.7. Sample R4 was irradiated under the same conditions assample I3 and sample R3 same as sample D3 (compare with table 4.1).Short term annealing was tted with expression 4.3 and results of the t are given intable 4.8. Comparison of the fast annealing of planar and mesa samples is shown in gure