Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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4. Time Development <strong>of</strong>Defects 71Figure 4.11: Time development <strong>of</strong>FDV <strong>for</strong> the diode I3 after the rst and the second neutronir<strong>radiation</strong> (4.410 13 n/cm 2 and 4.110 13 n/cm 2 1MeVneutron equivalent, respectively). Opencircles are used to compare the eect <strong>of</strong> the rst and the second ir<strong>radiation</strong>. They representthe change <strong>in</strong> full depletion voltage <strong>in</strong>duced by the second ir<strong>radiation</strong> (i.e. FDV after secondir<strong>radiation</strong> reduced <strong>for</strong> the value <strong>of</strong> the FDV be<strong>for</strong>e the second ir<strong>radiation</strong>).(approx. 240 V). Results <strong>in</strong> gure 4.11 however show this is not the case, so our resultscontradict the boron reactivation model.The disagreement with the model can also be seen from the comparison <strong>of</strong> the full(rst ir<strong>radiation</strong>) and open circles (second ir<strong>radiation</strong>) <strong>in</strong> the rst part <strong>of</strong> the gure, wherethe open circles were obta<strong>in</strong>ed by subtract<strong>in</strong>g the FDV just be<strong>for</strong>e the second ir<strong>radiation</strong>from the FDV after it. The comparison shows good agreement <strong>of</strong> defect generation andanneal<strong>in</strong>g from both ir<strong>radiation</strong> steps.4.3 Results on Anneal<strong>in</strong>g <strong>of</strong> MESA SamplesAn eect <strong>of</strong> the production process to the <strong>radiation</strong> hardness was reported by variousgroups [32, 47, 48, 49, 50]. Thus a comparison <strong>of</strong> diodes produced by a planar and MESAprocess was per<strong>for</strong>med <strong>in</strong> the scope <strong>of</strong> this work.Two MESA processed 11 cm 2 diodes on Polovodice wafers were irradiated to5 10 13 n/cm 2 . The diodes are oxygen enriched due to the process [47]. Their ir<strong>radiation</strong>