Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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4. Time Development <strong>of</strong>Defects 69Figure 4.9: Development <strong>of</strong> N eff = eq at the <strong>in</strong>itial stage <strong>of</strong> reverse anneal<strong>in</strong>g <strong>for</strong> unbiasedsamples kept at 20 C.Figure 4.10: Fluence dependence <strong>of</strong> eective g C <strong>for</strong> unbiased samples keptatat20 C. 15% <strong>of</strong>systematic error on the dosimetry is not <strong>in</strong>cluded <strong>in</strong> the error bars.