Study of radiation damage in silicon detectors for high ... - F9

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68 4. Time Development of DefectsSample V 0 FD eq eq g C kYlin[V] [10 11 n/cm 2 s] [10 14 n/cm 2 ] [10 ;2 cm ;1 ] [10 ;10 cm ;1 s ;1 ]R02B 45 2.1 0.21 0.42 9.1R02M 41 2.1 0.21 0.57 11.3R05B 39 2.1 0.53 1.4 13.5R05M 40 2.1 0.53 1.2 12.0R10B 47 2.1 1.06 1.4 15.3R10M 47 2.1 1.06 1.8 14.9R20B 41 2.1 2.1 1.6 11.1R20M 44 2.1 2.1 1.6 11.8Table 4.6: Full depletion voltage, irradiation conditions and results of the linear t for theinitial stage of the reverse annealing for diodes annealed at 20 C. Errors on klin Y are about 5%.Figure 4.8:a) k linYand b) kYlin=eq for the group annealed at 20 C. In case of a rst orderdynamics, the distribution in gure a) should be at while for a second order, the distributionb) should be at.ence dependent. Disagreement in the introduction rates of the stable defects g C can beexplained by donor removal. While it has not been taken into account it may have stillnot been completed for the samples irradiated to the low uences 35 . This explanation issupported by the uence dependence of eective g C as shown in gure 4.10.35It has to be considered that the RAN samples had initial full depletion voltage (eective dopantconcentration) about a factor 2 higher than the rest of the samples used in this work, enhancing theeect of incomplete donor removal.
4. Time Development ofDefects 69Figure 4.9: Development of N eff = eq at the initial stage of reverse annealing for unbiasedsamples kept at 20 C.Figure 4.10: Fluence dependence of eective g C for unbiased samples keptatat20 C. 15% ofsystematic error on the dosimetry is not included in the error bars.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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2. Operation and Radiation Damage o
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
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Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
Page 109 and 110: 6. Inuence of Bias Voltage 101(abou
Page 111 and 112: 6. Inuence of Bias Voltage 103Figur
Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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