Study of radiation damage in silicon detectors for high ... - F9

68 4. Time Development of DefectsSample V 0 FD eq eq g C kYlin[V] [10 11 n/cm 2 s] [10 14 n/cm 2 ] [10 ;2 cm ;1 ] [10 ;10 cm ;1 s ;1 ]R02B 45 2.1 0.21 0.42 9.1R02M 41 2.1 0.21 0.57 11.3R05B 39 2.1 0.53 1.4 13.5R05M 40 2.1 0.53 1.2 12.0R10B 47 2.1 1.06 1.4 15.3R10M 47 2.1 1.06 1.8 14.9R20B 41 2.1 2.1 1.6 11.1R20M 44 2.1 2.1 1.6 11.8Table 4.6: Full depletion voltage, irradiation conditions and results of the linear t for theinitial stage of the reverse annealing for diodes annealed at 20 C. Errors on klin Y are about 5%.Figure 4.8:a) k linYand b) kYlin=eq for the group annealed at 20 C. In case of a rst orderdynamics, the distribution in gure a) should be at while for a second order, the distributionb) should be at.ence dependent. Disagreement in the introduction rates of the stable defects g C can beexplained by donor removal. While it has not been taken into account it may have stillnot been completed for the samples irradiated to the low uences 35 . This explanation issupported by the uence dependence of eective g C as shown in gure 4.10.35It has to be considered that the RAN samples had initial full depletion voltage (eective dopantconcentration) about a factor 2 higher than the rest of the samples used in this work, enhancing theeect of incomplete donor removal.