Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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66 4. Time Development <strong>of</strong> DefectsSample g C [10 ;2 cm ;1 ] kY l<strong>in</strong> [10 ;7 cm ;1 s ;1 ]K3 3.2 3.4K1 2.6 2.9K0 2.7 2.1P0A 2.4 2.5P0B 2.4 2.5I3 4.0 2.2D3 4.2 1.8B3 4.1 2.6G3 1.7 1.5G2 1.8 1.7Table 4.5: Results <strong>of</strong> the l<strong>in</strong>ear t <strong>for</strong> the <strong>in</strong>itial stage <strong>of</strong> reverse anneal<strong>in</strong>g <strong>for</strong> diodes annealedat 60 C under bias. Errors on kl<strong>in</strong> Y are about 5%.Figure 4.6:a) k l<strong>in</strong>Yand b) kYl<strong>in</strong>=eq <strong>for</strong> the group annealed at 60 C. In case <strong>of</strong> a rst orderdynamics, the distribution <strong>in</strong> gure a) should be at, while <strong>for</strong> second order, the distribution b)should be at.<strong>in</strong>itial slope t. The <strong>in</strong>uence <strong>of</strong> the bias eect is however somewhat reduced s<strong>in</strong>ce thechanges <strong>in</strong> FDV (andthus changes <strong>in</strong> the portion <strong>of</strong> the region undepleted at 200 V) aresmaller. To obta<strong>in</strong> a conclusive result, aset<strong>of</strong> diodes fully biased or unbiased dur<strong>in</strong>g thecomplete treatment was necessary. Thus a set <strong>of</strong> diodes was dedicated to this type <strong>of</strong>analysis (RAN set).The diodes from the RAN set were unbiased and kept at 20 C dur<strong>in</strong>g the study.