Study of radiation damage in silicon detectors for high ... - F9

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66 4. Time Development of DefectsSample g C [10 ;2 cm ;1 ] kY lin [10 ;7 cm ;1 s ;1 ]K3 3.2 3.4K1 2.6 2.9K0 2.7 2.1P0A 2.4 2.5P0B 2.4 2.5I3 4.0 2.2D3 4.2 1.8B3 4.1 2.6G3 1.7 1.5G2 1.8 1.7Table 4.5: Results of the linear t for the initial stage of reverse annealing for diodes annealedat 60 C under bias. Errors on klin Y are about 5%.Figure 4.6:a) k linYand b) kYlin=eq for the group annealed at 60 C. In case of a rst orderdynamics, the distribution in gure a) should be at, while for second order, the distribution b)should be at.initial slope t. The inuence of the bias eect is however somewhat reduced since thechanges in FDV (andthus changes in the portion of the region undepleted at 200 V) aresmaller. To obtain a conclusive result, asetof diodes fully biased or unbiased during thecomplete treatment was necessary. Thus a set of diodes was dedicated to this type ofanalysis (RAN set).The diodes from the RAN set were unbiased and kept at 20 C during the study.
4. Time Development ofDefects 67Figure 4.7: Development of N eff at the initial stage of the reverse annealing for a) samplesR02B and R02M, b) samples R05B and R05M, c) samples R10B and R10M and d) samplesR20B and R20M.After the annealing stage was completed, time development of N eff was tted accordingto equation 4.10. The development of N eff at the initial stage of reverse annealing isshown in gure 4.7, together with the t. Results of the t are presented in table 4.6 andgure 4.8.Comparison of N eff = eq for all 8 samples annealed with no bias at 20 C is shownin gure 4.9 where it can be clearly seen that reverse annealing slopes k lin are not u-
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
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Page 71 and 72: 4. Time Development ofDefects 63Fig
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Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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