Study of radiation damage in silicon detectors for high ... - F9

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64 4. Time Development of DefectsFigure 4.4: a) First order and b) second order reverse annealing constants k Y 1and k Y 2independence of irradiation uence. First order assumption shows k Y 1/ eq dependence while k Y 2shows somewhat weaker uence dependence.for the second order. Thus, if we writeN eff (t) eq= g C + k linY t (4.10)the slope kYlin at the initial stage of reverse annealing is not uence dependent for therst order process and is increasing linearly with uence for the second order process andis the main dierence between rst and second order processes. A comparison of slopesk linY( eq ) can thus indicate the process responsible for reverse annealing.Two sets of samples were used for this study. In the rst were the diodes K3,K1,K0, P0A, P0B, I3, B3, D3, G3 and G2 that were reverse annealed at 60 C under bias.Their characteristics and irradiation conditions were presented in the previous subsection(table 4.3). In the second (RAN) set are 8 diodes irradiated and annealed with no bias.Those were planar Sintef p + -n-n + diodes with multiple non-connectable guard rings anddimensions 66 mm 2 (B diodes) and 55 mm 2 (M diodes). They were irradiated in fourpairs (one B and one M diode in each pair) to four dierent uences (table 4.6). To assureidentical conditions during annealing and reverse annealing they were all mounted on thesame metalised glass plate and kept at 20 C.Time development of N eff at the initial stage of the reverse annealing for diodesannealed at 60 C is shown in gure 4.5. Results of the t according to eq. 4.10 are
4. Time Development ofDefects 65Figure 4.5: Time dependence of N eff at the initial stage of the reverse annealing for a) samplesG3 and G2, b) samples I3, D3 and B3, c) samples P0A and P0B and d) samples K3, K1 andK0.presented in table 4.5 and gure 4.6.Contrary to the results from the reaction kinematics t, results from the t of theinitial slope slightly favours a rst order process. However both kYlin and kYlin = eq areuence dependent and do not give clear evidence for any of the two proposed models.The samples however are the same as used for reaction kinematics t in the previoussection. Thus the inuence of partial bias as given there also applies to the results of the
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
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Page 47 and 48: 3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
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Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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