Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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64 4. Time Development <strong>of</strong> DefectsFigure 4.4: a) First order and b) second order reverse anneal<strong>in</strong>g constants k Y 1and k Y 2<strong>in</strong>dependence <strong>of</strong> ir<strong>radiation</strong> uence. First order assumption shows k Y 1/ eq dependence while k Y 2shows somewhat weaker uence dependence.<strong>for</strong> the second order. Thus, if we writeN eff (t) eq= g C + k l<strong>in</strong>Y t (4.10)the slope kYl<strong>in</strong> at the <strong>in</strong>itial stage <strong>of</strong> reverse anneal<strong>in</strong>g is not uence dependent <strong>for</strong> therst order process and is <strong>in</strong>creas<strong>in</strong>g l<strong>in</strong>early with uence <strong>for</strong> the second order process andis the ma<strong>in</strong> dierence between rst and second order processes. A comparison <strong>of</strong> slopesk l<strong>in</strong>Y( eq ) can thus <strong>in</strong>dicate the process responsible <strong>for</strong> reverse anneal<strong>in</strong>g.Two sets <strong>of</strong> samples were used <strong>for</strong> this study. In the rst were the diodes K3,K1,K0, P0A, P0B, I3, B3, D3, G3 and G2 that were reverse annealed at 60 C under bias.Their characteristics and ir<strong>radiation</strong> conditions were presented <strong>in</strong> the previous subsection(table 4.3). In the second (RAN) set are 8 diodes irradiated and annealed with no bias.Those were planar S<strong>in</strong>tef p + -n-n + diodes with multiple non-connectable guard r<strong>in</strong>gs anddimensions 66 mm 2 (B diodes) and 55 mm 2 (M diodes). They were irradiated <strong>in</strong> fourpairs (one B and one M diode <strong>in</strong> each pair) to four dierent uences (table 4.6). To assureidentical conditions dur<strong>in</strong>g anneal<strong>in</strong>g and reverse anneal<strong>in</strong>g they were all mounted on thesame metalised glass plate and kept at 20 C.Time development <strong>of</strong> N eff at the <strong>in</strong>itial stage <strong>of</strong> the reverse anneal<strong>in</strong>g <strong>for</strong> diodesannealed at 60 C is shown <strong>in</strong> gure 4.5. Results <strong>of</strong> the t accord<strong>in</strong>g to eq. 4.10 are