Study of radiation damage in silicon detectors for high ... - F9

More documents

Recommendations

Info

62 4. Time Development of DefectsFigure 4.2: First order (red line) and second order (black line) ts for diodes K3, K1, K0,P0A, P0B and I3. N eff = eq versus heating time at 60 C is displayed.Fluence dependence of reverse annealing constants is however aected by partialbias of the samples. Namely, all samples were biased with 200 V. Thus samples irradiatedto low uences were strongly over-biased while those irradiated to high uence were onlypartially depleted. Also, for highly irradiated samples, the depleted depth was decreasingwith reverse annealing due to the raise of FDV. And since biased regions have higherN eff than unbiased ones, this reects in time development of an average N eff . As this
4. Time Development ofDefects 63Figure 4.3: First order (red line) and second order (black line) ts for diodes B3, D3, G3 andG2. N eff = eq versus heating time at 60 C is displayed.represents the quantity used in the study of reverse annealing, partial bias aects valuesof the reverse annealing parameters.4.2.2 Initial Slope FitDuring the initial stage of reverse annealing, i.e. for k Y 1t 1andg Y eq k Y 2t 1 for rstand second order processes respectively, equations 4.6 and 4.7 can be linearised tofor the rst order andN eff (t) eq= g C + g Y k Y 1t (4.8)N eff (t) eq= g C + g 2 Y eq k Y 2t (4.9)
Page 1:
UNIVERSITY OF LJUBLJANAFACULTY OF M
Page 5:
Najprej gre moja zahvala delovnima
Page 8 and 9:
PovzetekSevalne poskodbe v siliciju
Page 10 and 11:
3.5 Measurement Setup, Methods and
Page 13 and 14:
1IntroductionSilicon detectors play
Page 15 and 16:
1. Introduction 7Figure 1.2: Schema
Page 17 and 18:
1. Introduction 9R(cm)Z(cm)Figure 1
Page 19 and 20: 2Operation and Radiation Damage of
Page 21 and 22: 2. Operation and Radiation Damage o
Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69: 4. Time Development ofDefects 61for
Page 73 and 74: 4. Time Development ofDefects 65Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
Page 109 and 110: 6. Inuence of Bias Voltage 101(abou
Page 111 and 112: 6. Inuence of Bias Voltage 103Figur
Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122:
9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124:
9. Povzetek doktorskega dela 115Ski
Page 125 and 126:
9. Povzetek doktorskega dela 117sre
Page 127 and 128:
9. Povzetek doktorskega dela 1199.2
Page 129 and 130:
9. Povzetek doktorskega dela 121Sli
Page 131 and 132:
9. Povzetek doktorskega dela 123Ce
Page 133 and 134:
Page 135 and 136:
9. Povzetek doktorskega dela 127Cep
Page 137 and 138:
9. Povzetek doktorskega dela 129Mer
Page 139 and 140:
9. Povzetek doktorskega dela 131Sam
Page 141 and 142:
Page 143 and 144:
Page 145 and 146:
9. Povzetek doktorskega dela 1379.6
Page 147 and 148:
10Appendix: List of Symbols and Abb
Page 149 and 150:
10. Appendix: List of Symbols and A
Page 151 and 152:
References[1] J. Straver et al., Nu
Page 153 and 154:
[27] A.M. Ougang et al.: Dierential
Page 155 and 156:
[57] M. Huhtinen et al, HU-SEFT-R-1
Page 158:
Izjavljam, da je disertacija rezult
show all

Study of radiation damage in silicon detectors for high ... - F9

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?