Study of radiation damage in silicon detectors for high ... - F9

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56 4. Time Development of DefectsSample process No. of GR V 0 FD [V] T eq [n/cm 2 s] eq [n/cm 2 ]K3 planar 3 6 5 C 1:9 10 9 1:03 10 14I3 planar 3 24 5 C 1:9 10 9 4:4 10 13D3 planar 3 16 15 C 1:8 10 9 4:7 10 13D1 planar 3 26 15 C 1:9 10 10 4:2 10 13B3 planar 3 20 0 C 1:9 10 9 4:4 10 13G3 planar 3 23 0 C 1:8 10 9 8:3 10 12G2 planar 3 20 0 C 1:8 10 10 8:7 10 12Table 4.1: List of diodes used in study of fast annealing of N eff . Processing type, no. of guardrings, full depletion voltage before irradiation, irradiation/storage temperature, irradiation uxand uence normalised to 1 MeV neutrons are given for each sample. Thickness of samples was3005 m.In case of irradiation times t irr comparable with decay time constants i , annealingduring the irradiation should be taken into account. In that case equation 4.1 is generalisedtoN eff (t) = [gC t + P i g i i (1 ; e ;t= i)] eq t
4. Time Development ofDefects 57* Figure 4.1: Development ofN eff a) during and b) after irradiation for samples D3, I3 and B3.The samples were treated identically except for the temperature that was 15 C, 5 Cand0 C,respectively. In gure a) type inversion point can be seen at 0.2 h. In gure b) the t accordingto eq. 4.3 (red lines) ts the measured data perfectly.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17 and 18: 1. Introduction 9R(cm)Z(cm)Figure 1
Page 19 and 20: 2Operation and Radiation Damage of
Page 21 and 22: 2. Operation and Radiation Damage o
Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63: 4Time Development of DefectsIn this
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
Page 109 and 110: 6. Inuence of Bias Voltage 101(abou
Page 111 and 112: 6. Inuence of Bias Voltage 103Figur
Page 113 and 114: 7Comparison with Other GroupsWhile
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7. Comparison with Other Groups 107
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8ConclusionsA systematic study of r
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8. Conclusions 111Implications for
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9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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