Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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56 4. Time Development <strong>of</strong> DefectsSample process No. <strong>of</strong> GR V 0 FD [V] T eq [n/cm 2 s] eq [n/cm 2 ]K3 planar 3 6 5 C 1:9 10 9 1:03 10 14I3 planar 3 24 5 C 1:9 10 9 4:4 10 13D3 planar 3 16 15 C 1:8 10 9 4:7 10 13D1 planar 3 26 15 C 1:9 10 10 4:2 10 13B3 planar 3 20 0 C 1:9 10 9 4:4 10 13G3 planar 3 23 0 C 1:8 10 9 8:3 10 12G2 planar 3 20 0 C 1:8 10 10 8:7 10 12Table 4.1: List <strong>of</strong> diodes used <strong>in</strong> study <strong>of</strong> fast anneal<strong>in</strong>g <strong>of</strong> N eff . Process<strong>in</strong>g type, no. <strong>of</strong> guardr<strong>in</strong>gs, full depletion voltage be<strong>for</strong>e ir<strong>radiation</strong>, ir<strong>radiation</strong>/storage temperature, ir<strong>radiation</strong> uxand uence normalised to 1 MeV neutrons are given <strong>for</strong> each sample. Thickness <strong>of</strong> samples was3005 m.In case <strong>of</strong> ir<strong>radiation</strong> times t irr comparable with decay time constants i , anneal<strong>in</strong>gdur<strong>in</strong>g the ir<strong>radiation</strong> should be taken <strong>in</strong>to account. In that case equation 4.1 is generalisedtoN eff (t) = [gC t + P i g i i (1 ; e ;t= i)] eq t
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