Study of radiation damage in silicon detectors for high ... - F9

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54 3. Irradiation Facility
4Time Development of DefectsIn this chapter results of the study of time development of radiation-induced defects arepresented. The study consists of measurements of two detector properties these defectscause, full depletion voltage and generation current (bulk reverse current). Time developmentof full depletion voltage (or N eff ) is described by equation 2.65. Since timeconstants for the annealing and reverse-annealing part dier by about two orders of magnitude(around room temperature order of days for annealing compared to about a year forreverse annealing) both phenomena have been studied separately. Due to large amountsof data available for the slow part of annealing (time scale of days at room temperature)[14, 18, 19, 21, 45, 46] this work is only dealing with the fast part (time scale of hours)where data are rather scarce. Results of this study are presented in the rst section. Inthe second section reverse annealing of N eff is discussed with the purpose to determinethe dynamics of responsible processes (rst or second order). Finally, in the third section,results on time development of reverse current are presented.4.1 Fast Annealing of NeffAccording to equation 2.65 and neglecting reverse annealing on the time scale of measurements30 the initial stage of N eff time development can be described byN eff (t) =g C eq + X ig i eq e ;t= i: (4.1)Here g i are introduction rates and i decay time constants of unstable defects and g Cintroduction rate of defects stable in time.30Reverse annealing contributes a few percent of constant level during one week at 15 C and less atlower temperatures.55
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17 and 18: 1. Introduction 9R(cm)Z(cm)Figure 1
Page 19 and 20: 2Operation and Radiation Damage of
Page 21 and 22: 2. Operation and Radiation Damage o
Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61: 3. Irradiation Facility 53percent.
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
Page 109 and 110: 6. Inuence of Bias Voltage 101(abou
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7Comparison with Other GroupsWhile
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7. Comparison with Other Groups 107
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8ConclusionsA systematic study of r
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8. Conclusions 111Implications for
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9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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