Study of radiation damage in silicon detectors for high ... - F9

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36 3. Irradiation Facility1 mconcreteF19RabbitSampleIrrad. ChamberwatergraphiteFission plateReactor coreFigure 3.1: Schematic view of the reactor cross-section. The reactor core consists of fuel rodsand control rods, surrounded by a graphite reector. It is placed into a reactor vessel lled withwater. Among many irradiation spots only those connected to this work are marked. Possibility to irradiate samples with dimensions up to 1010 cm 2 . Possibility to bias the samples and perform C/V (capacitance versus voltage) andI/V (current versus voltage) measurements during and after the irradiation. Possibility tokeep the samples at a xed temperature during and after irradiation.The last two conditions can be reduced to free access for bias/measuring cablesand cooling pipes while the second and the third condition were unfortunately not compatible.For that reason two irradiation channels had to be equipped. They were theirradiation chamber and the vertical irradiation channel F19. The vertical irradiationchannel equipped with a rabbit system (F24) was also used at the beginning for fastirradiations where cooling and biasing of the samples were not required (g. 3.1).
3. Irradiation Facility 373.3 Irradiation Chamber3.3.1 Channel DescriptionThe irradiation chamber is one of the horizontal irradiation channels, widening at theend to a small chamber (approx. 222 m 3 ) (g. 3.2). To increase the fast neutronux, a ssion plate 17 is placed in front of the sample during irradiations. During theirradiation, samples were kept in an irradiation box with controlled temperature. Thebox was mounted on a remote-driven trolley to move the sample into the channel and outof it.1 mChamber gateirrad. boxbias/coolingtrolleyReactorcorefissionplateirradiationchannelFigure 3.2: Schematic view of the irradiation chamber. The trolley with mounted irradiationbox is in the outside position.The irradiation box contained two independent cooling slots, connected to Peltierelements. Each was powered by a 12V DC power supply controlled by aYokogawa UT15temperature controller. The warm side of the Peltier elements was water cooled to 5-10 C. The sample temperature was measured by a Pt100 sensor, placed within a few mmfrom the sample and connected to the Yokogawa controller. Temperatures down to about-20 C could be obtained, stable within 0.2 C.3.3.2 Measurement SetupThe reactor measurement setup enabled biasing of the samples and C/V and I/V measurementsduring and after the irradiation. It consisted of a Wentzel high voltage power17The ssion plate is made of 1468 g of 238 U, enriched to 20% 235 U, forming an active disc with adiameter of about 30 cm.
Page 1: UNIVERSITY OF LJUBLJANAFACULTY OF M
Page 5: Najprej gre moja zahvala delovnima
Page 8 and 9: PovzetekSevalne poskodbe v siliciju
Page 10 and 11: 3.5 Measurement Setup, Methods and
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17 and 18: 1. Introduction 9R(cm)Z(cm)Figure 1
Page 19 and 20: 2Operation and Radiation Damage of
Page 21 and 22: 2. Operation and Radiation Damage o
Page 43: 3Irradiation Facility3.1 The Reacto
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Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
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Page 71 and 72: 4. Time Development ofDefects 63Fig
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Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 87could be
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6Inuence of Bias VoltageIt was a ge
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6. Inuence of Bias Voltage 91energy
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6. Inuence of Bias Voltage 93Figure
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6. Inuence of Bias Voltage 99that t
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6. Inuence of Bias Voltage 101(abou
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6. Inuence of Bias Voltage 103Figur
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7Comparison with Other GroupsWhile
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7. Comparison with Other Groups 107
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8ConclusionsA systematic study of r
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8. Conclusions 111Implications for
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9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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