Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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34 2. Operation and Radiation Damage <strong>of</strong> Silicon Detectors2.4.2 Time Evolution <strong>of</strong> N effResults on the N eff time development show that all three types <strong>of</strong> defects are tak<strong>in</strong>g part<strong>in</strong> the time development <strong>of</strong> defects contribut<strong>in</strong>g to the space charge <strong>in</strong> the depleted region(g. 2.8). While the anneal<strong>in</strong>g part can be described with a sum <strong>of</strong> exponentials likethe leakage current and thus <strong>in</strong>dicates decays <strong>of</strong> active defects, the nature <strong>of</strong> the reverseanneal<strong>in</strong>g part is not fully understood yet. The time development <strong>of</strong> the N eff can thusbe parametrised asN eff (t) =N C + X iN i e ;t= i+ N Y (t) (2.65)where N C represents defects constant <strong>in</strong> time, N i defects that anneal with time constants i and N Y defects responsible <strong>for</strong> the reverse anneal<strong>in</strong>g. 16 Depend<strong>in</strong>g on the reactionsresponsible <strong>for</strong> reverse anneal<strong>in</strong>g, N Y (t) is described by equations 2.57, 2.59 or 2.61,depend<strong>in</strong>g on the type <strong>of</strong> reaction(s) responsible <strong>for</strong> the reverse anneal<strong>in</strong>g. Agreement <strong>of</strong>the measured results with dierent options will be presented later <strong>in</strong> this work.*16Defects contribut<strong>in</strong>g to the charge <strong>in</strong> the SCR are not necessarily the same as those contribut<strong>in</strong>g tothe leakage current, thus also time constants may dier.