Study of radiation damage in silicon detectors for high ... - F9

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26 2. Operation and Radiation Damage of Silicon DetectorsFigure 2.5: The neutron damage function for silicon according to Ougouag [27]."NIEL hypothesis"the radiation damage of the bulk depends on the non-ionising energyloss only. This has been experimentally demonstrated for protons, neutrons and pions[13, 18, 19, 20, 21, 22].Displacement damage scales linearly with NIEL. It is given by the damage functionD(E) [25]. The damage caused by dierent particles is usually compared with the damagecaused by neutrons. Since D depends on neutron energy (gure 2.5), the damage doneby 1 MeV neutrons is taken as a reference point. The standard value for the neutrondamage at 1 MeV is 95 MeVmb [26]. For an irradiation with particles A with spectraldistribution ddE and cut-os E min and E max a hardness factor can be dened as A =R EmaxhD A iD(1MeVn) = 1D n (1MeV) E minD A (E) d A(E) dER EmaxE mindEd AdE (E) dE : (2.48)In order to allow a universal comparison of results it is common practice to refer tothe equivalent uence eq of 1 MeV neutrons which would have caused the same damageas the uence of particles actually applied. is converted into eq by multiplying itwith the hardness factor eq = A A : (2.49)
2. Operation and Radiation Damage of Silicon Detectors 27Primary Vacancies Primary Interstitials Replaced impuritiesGroup AV +P! VP I+VP ! P C i + C s ! C i -C sV +O! VO I+VO ! O C i + O i ! C i -O iV +VO ! V 2 O I+V 2 ! V C i + P s ! C i -P sV +C i ! C s I+C s ! C iV +V 2 O ! V 3 O I+V 3 O ! V 2 OV 2 + V ! V 3Group BV +V! V 2 I+V ! SiV 2 + V ! V 3Table 2.1: Survey of possible defect reactions. Group A reactions are caused by diusion ofinterstitials and vacancies throughout the crystal. To group B belong the reactions, which havea signicant chance of occurring during a primary cascade. Indexes i and s stand for interstitialand substitutional.2.2.3 Types of DefectsAt the interaction of the traversing particle with the lattice an interstitial-vacancy pair(Frenkel pair) or a cluster can be produced, depending on energy, transferred to the primaryatom. Though physical properties of clusters are not determined yet, theoreticalmodels have been proposed [23]. In the rst phase the disordered region consists of manyinterstitials and vacancies. Most of the vacancies and interstitials recombine, some vacanciesmay interact to form stable divacancies or higher vacancy complexes while therest diuse away. Those can react with other radiation induced defects, forming defectcomplexes, or react with impurity atoms such as carbon, oxygen and phosphorus, thosebeing among the most common impurities in silicon. When only a Frenkel pair is createdonly reactions with existing defects are possible. Thus reactions of the defects can be dividedinto two groups. In the group A are reactions of vacancies and interstitials diusingthroughout the crystal. Group B reactions only have a signicant chance of occurringwithin the cluster, where the defect density ishigh.Possible reactions of both groups arelisted in table 2.1 and the most relevant defect congurations are shown schematically ingure 2.6.2.3 Eects on Bulk PropertiesDefects generated during the irradiation have the following eects on the bulk properties: They introduce new energy levels in the band gap, contributing to emission and
Page 1: UNIVERSITY OF LJUBLJANAFACULTY OF M
Page 5: Najprej gre moja zahvala delovnima
Page 8 and 9: PovzetekSevalne poskodbe v siliciju
Page 10 and 11: 3.5 Measurement Setup, Methods and
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17 and 18: 1. Introduction 9R(cm)Z(cm)Figure 1
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Page 43 and 44: 3Irradiation Facility3.1 The Reacto
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Page 63 and 64: 4Time Development of DefectsIn this
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4. Time Development ofDefects 77Fig
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4. Time Development ofDefects 79An
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5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 83Figure 5.
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5. Dose Rate Dependence 85Figure 5.
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5. Dose Rate Dependence 87could be
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6Inuence of Bias VoltageIt was a ge
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6. Inuence of Bias Voltage 91energy
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6. Inuence of Bias Voltage 93Figure
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6. Inuence of Bias Voltage 99that t
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6. Inuence of Bias Voltage 101(abou
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6. Inuence of Bias Voltage 103Figur
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7Comparison with Other GroupsWhile
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7. Comparison with Other Groups 107
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8ConclusionsA systematic study of r
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8. Conclusions 111Implications for
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9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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