Study of radiation damage in silicon detectors for high ... - F9

More documents

Recommendations

Info

10 1. Introductionvery important intheattempt to build a radiation hard detector.In the next chapter the basics of detector operation and a simple microscopic viewof the defects as understood so far is presented. In the third part irradiation facilities atthe TRIGA nuclear reactor that were developed as a part of this work are described. Thefourth chapter is dedicated to time development of defects, where results on short termand reverse annealing are discussed. The fth chapter presents results of the study of doserate eect and in the sixth results at the inuence of detector bias on defect developmentare presented. In the last chapter, results from this work are compared with results fromother authors. The slovene summary is given after the conclusions and a list of symbolsand abbreviations used in this work can be found in the appendix.
2Operation and Radiation Damage of Silicon Detectors2.1 Basics of Operation of Silicon DetectorsA silicon position-sensitive detector is an array of diodes on a silicon wafer. When reversebiased, it is operating like an ionization chamber. Ionising particles passing a silicon detectorgenerate electron-hole pairs along their paths. The number of pairs is proportionalto the particles' energy loss. The creation of an electron-hole pair requires a mean energyof 3.6 eV with average energy loss in silicon of about 390 eV/m foraminimum-ionisingparticle. For a typical detector thickness of about 300 m, one obtains on average 3 10 4electron-hole pairs, a signal detectable with low-noise electronics.pad (p + ) guard ring (p + )n bulk+backplane (n )Figure 2.1: Aschematic view of a pad detector. The highly doped p + pad and guard ring areshown on the p side of the diode.As the emphasis of this study was in the radiation damage of the silicon bulk,silicon pad detectors (diodes) proved to be the ideal device. Simple processing providesgood reproducibility and low cost. Simple structure of pad detectors (gure 2.1) stronglyreduces the eects of surface radiation damage. Detectors consist of high resistivity bulk,highly n doped (n + ) on one side (backplane). The other (p) side consists of a large highlydoped p + pad, often surrounded by one or more p + rings (guard rings). Due to simple11
Page 1: UNIVERSITY OF LJUBLJANAFACULTY OF M
Page 5: Najprej gre moja zahvala delovnima
Page 8 and 9: PovzetekSevalne poskodbe v siliciju
Page 10 and 11: 3.5 Measurement Setup, Methods and
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17: 1. Introduction 9R(cm)Z(cm)Figure 1
Page 21 and 22: 2. Operation and Radiation Damage o
Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70:
4. Time Development ofDefects 61for
Page 71 and 72:
4. Time Development ofDefects 63Fig
Page 73 and 74:
Page 75 and 76:
Page 77 and 78:
Page 79 and 80:
Page 81 and 82:
Page 83 and 84:
Page 85 and 86:
Page 87 and 88:
4. Time Development ofDefects 79An
Page 89 and 90:
5Dose Rate Dependence5.1 Motivation
Page 91 and 92:
5. Dose Rate Dependence 83Figure 5.
Page 93 and 94:
5. Dose Rate Dependence 85Figure 5.
Page 95 and 96:
5. Dose Rate Dependence 87could be
Page 97 and 98:
6Inuence of Bias VoltageIt was a ge
Page 99 and 100:
6. Inuence of Bias Voltage 91energy
Page 101 and 102:
6. Inuence of Bias Voltage 93Figure
Page 103 and 104:
Page 105 and 106:
Page 107 and 108:
6. Inuence of Bias Voltage 99that t
Page 109 and 110:
6. Inuence of Bias Voltage 101(abou
Page 111 and 112:
6. Inuence of Bias Voltage 103Figur
Page 113 and 114:
7Comparison with Other GroupsWhile
Page 115 and 116:
7. Comparison with Other Groups 107
Page 117 and 118:
8ConclusionsA systematic study of r
Page 119 and 120:
8. Conclusions 111Implications for
Page 121 and 122:
9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124:
9. Povzetek doktorskega dela 115Ski
Page 125 and 126:
9. Povzetek doktorskega dela 117sre
Page 127 and 128:
9. Povzetek doktorskega dela 1199.2
Page 129 and 130:
9. Povzetek doktorskega dela 121Sli
Page 131 and 132:
9. Povzetek doktorskega dela 123Ce
Page 133 and 134:
Page 135 and 136:
9. Povzetek doktorskega dela 127Cep
Page 137 and 138:
9. Povzetek doktorskega dela 129Mer
Page 139 and 140:
9. Povzetek doktorskega dela 131Sam
Page 141 and 142:
Page 143 and 144:
Page 145 and 146:
9. Povzetek doktorskega dela 1379.6
Page 147 and 148:
10Appendix: List of Symbols and Abb
Page 149 and 150:
10. Appendix: List of Symbols and A
Page 151 and 152:
References[1] J. Straver et al., Nu
Page 153 and 154:
[27] A.M. Ougang et al.: Dierential
Page 155 and 156:
[57] M. Huhtinen et al, HU-SEFT-R-1
Page 158:
Izjavljam, da je disertacija rezult
show all

Study of radiation damage in silicon detectors for high ... - F9

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?