Study of radiation damage in silicon detectors for high ... - F9

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[14] T. Schulz: Investigation on the Long term Behaviour of Damage Eects andCorresponding Defects in Detector Grade Silifon after Neutron Irradiation, Ph.D.Thesis, DESY 96-027 (1995).[15] A. Chilingarov etal., Nucl. Instr. Meth. A 360 (1995) 432.[16] L. Beattie et al., ROSE Technical Note 97/4 (1997).[17] A. Chilingarov etal, 3 rd ROSE Workshop on Radiaton Hardening of SiliconDetectors, DESY-PROCEEDINGS-1998-02 (1998).[18] A. Chilingarov etal., Nucl. Instr. Meth. A 360 (1995) 432.[19] R. Wunsdorf, Systematische Untersuchungen zur Strahelenresitenz vonSilizium-Detektoren fur die Verwendung in Hochenergiephysik-Experimenten, Ph.D.thesis, DESY FHIK-92-01 (1992).[20] H. Feick: Radiation Tolerance of Silicon Particle detectors for High-Energy PhysicsExperiments, Ph.D. Thesis, DESY F35D-97-08 (1997).[21] S.J. Bates et al., CERN-ECP/95-26 (1995).[22] P.A. Aarnio et al., Nucl. Instr. Meth. A360 (1995) 521,Rogalla, M. et al.:Radiation damage to neutron and proton irradiated GaAs particledetectors, (1997) to be published in Nucl. Instr. Meth.,K. Riechmann et al., Nucl. Instr. Meth A377 (1996) 276,S.J. Bates et al., CERN-ECP/95-03 (1995),J.A.J. Matthews, ATLAS Internal note INDET-NO-118 (1995),M. Huhtinen et al., Nucl. Instr. Meth A335 (1993) 580,A. Van Ginneken, FN-522 (1989).[23] B.R. Gossick, Journal of Applied Physics 30 (1959) 6.L.S. Smirnov A Survey of Semiconductor Radiation Techniques, Mir Publishers,Moscow, 1983.[24] G. Kinchin et al., Rep. Prog. Phys. Vol. 18., (1959).[25] M.S.Lazo et al.: Silicon and silicon dioxide neutron damage functions, Proc.FastBurt. React. Workshop, Sandia National Laboratories 1987, SAND-87-009 8 Vol.185-103.[26] Annual Book of ASTM Standards, Vol 12.02, chapter ASTM E722-85, pages324-329. ASTM Commitee E-10 on Nuclear Technology and Application, May 1985.144
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
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3. Irradiation Facility 43Figure 3.
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3. Irradiation Facility 45Figure 3.
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3. Irradiation Facility 47the inuen
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3. Irradiation Facility 49width of
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3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
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4Time Development of DefectsIn this
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4. Time Development ofDefects 57* F
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4. Time Development ofDefects 59val
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4. Time Development ofDefects 61for
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4. Time Development ofDefects 63Fig
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4. Time Development ofDefects 79An
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5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 83Figure 5.
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5. Dose Rate Dependence 85Figure 5.
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5. Dose Rate Dependence 87could be
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6Inuence of Bias VoltageIt was a ge
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6. Inuence of Bias Voltage 91energy
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 129 and 130: 9. Povzetek doktorskega dela 121Sli
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Page 135 and 136: 9. Povzetek doktorskega dela 127Cep
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Page 147 and 148: 10Appendix: List of Symbols and Abb
Page 149 and 150: 10. Appendix: List of Symbols and A
Page 151: References[1] J. Straver et al., Nu
Page 155 and 156: [57] M. Huhtinen et al, HU-SEFT-R-1
Page 158: Izjavljam, da je disertacija rezult
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