Study of radiation damage in silicon detectors for high ... - F9

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140 10. Appendix: List of Symbols and AbbreviationsN SiN TN VN XNX0QSR PTVV FDV biWc Ac De 0e ee hf Tgg Cg Yhj difj satj SCRk Bk Y 1k Y 2kYlinm em hnn in p0n Tpp n0rcerchr pairconcentration of Si atoms in the crystalconcentration of traps Tdensity of states in the valence bandconcentration of defect Xinitial concentration of defect Xchargesample areaphosphorus introduction ratetemperaturevoltagefull depletion voltagebuilt-in voltagedetector thicknessacceptor removal constantdonor removal constantelectron charge magnitudeemission probability for electrons from a trapemission probability for holes from a trapprobability fora trap to be occupieddefect generation rategeneration rate of stable defectsgeneration rate of defects responsible for reverse annealingPlanck constantdiusion currentsaturation currentgeneration current density in SCRBoltzmann constantrst order reaction constantsecond order reaction constantslope of reverse annealing at initial stageeective mass of electronseective mass of holesconcentration of electrons in the conduction bandintrinsic carrier concentrationequilibrium electron density on p sideconcentration of occupied trapsconcentration of holes in the valence bandequilibrium hole density on n sideelectron capture rate by a traphole capture rate by a trapelectron-hole pair creation rate
10. Appendix: List of Symbols and Abbreviations 141v ev hx nx pw Si e Si e h e h iietrhtr eqFDVSCRC/VI/VNIELelectron thermal velocityhole thermal velocitydepth of the depleted region on n sidedepth of the depleted region on p sidetotal depth of the depleted regionleakage current damage constantdielectric constant od siliconhardness factorspecic resistivitycharge densitydensity of siliconelectron capture cross-section ofatraphole capture cross-section of a trapradiative capture cross-sectionelectron lifetimehole lifetimeN eff annealing time constantsreverse current annealing time constantselectron trapping time constanthole trapping time constantuxuenceequivalent uencefull depletion voltagespace charge regioncapacitance vs. voltagecurrent vs. voltagenon-ionising energy loss
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
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3. Irradiation Facility 43Figure 3.
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3. Irradiation Facility 45Figure 3.
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3. Irradiation Facility 47the inuen
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3. Irradiation Facility 49width of
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3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
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4Time Development of DefectsIn this
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4. Time Development ofDefects 57* F
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4. Time Development ofDefects 59val
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4. Time Development ofDefects 61for
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4. Time Development ofDefects 63Fig
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4. Time Development ofDefects 79An
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5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 83Figure 5.
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5. Dose Rate Dependence 85Figure 5.
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5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 127 and 128: 9. Povzetek doktorskega dela 1199.2
Page 129 and 130: 9. Povzetek doktorskega dela 121Sli
Page 131 and 132: 9. Povzetek doktorskega dela 123Ce
Page 135 and 136: 9. Povzetek doktorskega dela 127Cep
Page 137 and 138: 9. Povzetek doktorskega dela 129Mer
Page 139 and 140: 9. Povzetek doktorskega dela 131Sam
Page 145 and 146: 9. Povzetek doktorskega dela 1379.6
Page 147: 10Appendix: List of Symbols and Abb
Page 151 and 152: References[1] J. Straver et al., Nu
Page 153 and 154: [27] A.M. Ougang et al.: Dierential
Page 155 and 156: [57] M. Huhtinen et al, HU-SEFT-R-1
Page 158: Izjavljam, da je disertacija rezult
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