Study of radiation damage in silicon detectors for high ... - F9

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138 9. Povzetek doktorskega dela Napajalna napetost na detektorju vodi do vecje N eff po koncanem koristnem okrevanju.Presezek v primerjavi z vzorcem brez napajanja se po izklopu napetostimanjsa, vendar se ob ponovnem vklopu povrne. Program delovanja detektorjev jetreba prilagoditi tako, da bo skodljivi vpliv tega pojava cim manjsi. Dokazano je bilo, da obratno okrevanje vsaj v zacetni fazi, ki je pomembna za LHC,dobro popisemo z reakcijo prvega reda.
10Appendix: List of Symbols and AbbreviationsACD(E)D n (E)E CE FEFTE TE VE aE gE iE CE VIJ hJ eJ genhJhrecL eL hN ANA0N AvN CN DND0N effatomic numberdepletion layer capacitancedamage functionneutron damage functionenergy at bottom of conduction bandFermi levelquasi Fermi level for a trap in the SCRenergy ofatraplevelenergy at top of valence bandactivation energyenergy gap E C ; E Vintrinsic Fermi levelE C ; E TE T ; E Velectrical currenttotal current of holestotal current of electronsgeneration current of holesrecombination current of holeselectron diusion lenghthole diusion lenghtacceptor concentrationinitial acceptor concentrationAvogadro numberdensity of states in the conduction banddonor concentrationinitial donor concentrationeective dopant concentration139
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
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3. Irradiation Facility 43Figure 3.
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3. Irradiation Facility 45Figure 3.
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3. Irradiation Facility 47the inuen
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3. Irradiation Facility 49width of
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3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
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4Time Development of DefectsIn this
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4. Time Development ofDefects 57* F
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4. Time Development ofDefects 59val
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4. Time Development ofDefects 61for
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4. Time Development ofDefects 63Fig
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4. Time Development ofDefects 79An
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5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 83Figure 5.
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5. Dose Rate Dependence 85Figure 5.
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Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
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Page 129 and 130: 9. Povzetek doktorskega dela 121Sli
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Page 149 and 150: 10. Appendix: List of Symbols and A
Page 151 and 152: References[1] J. Straver et al., Nu
Page 153 and 154: [27] A.M. Ougang et al.: Dierential
Page 155 and 156: [57] M. Huhtinen et al, HU-SEFT-R-1
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Study of radiation damage in silicon detectors for high ... - F9

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