Study of radiation damage in silicon detectors for high ... - F9

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132 9. Povzetek doktorskega delaSlika 9.10:razlicnimi uksi nevtronov. Casovni razvoj efektivne koncentracije primesi pri 60 C za diode, obsevane zVzorec eq [n/cm 2 s] eq [n/cm 2 ]SA1 2:2 10 8 1:3 10 14SA2 2:2 10 8 1:3 10 14K3 1:9 10 9 1: 10 14K1 3:7 10 11 1: 10 14K0 1:6 10 12 1: 10 14P0A 5 10 15 1:1 10 14P0B 5 10 15 1:1 10 14Tabela 9.4: Seznam diod uporabljenih za studij vpliva nevtronskega uksa in pogoji obsevanja.znani. Rezultati [52] za obsevanje z Br, Si in C kazejo znatno upadanje hitrosti tvorbeposkodb pri ionskih uksih nad 10 7 cm ;2 s ;1 ,10 8 cm ;2 s ;1 in nekajkrat 10 8 cm ;2 s ;1 . Opaznoje upadanje mejnega uksa z narascajoco maso, tako da lahko za nevtrone pricakujemomejo nad 10 9 n/cm 2 s.
9. Povzetek doktorskega dela 133Slika 9.11: Casovni razvoj zapornega toka pri 60 C za diode, obsevane z razlicnimi uksinevtronov. Vrednosti parametra so normalizirane na 20 C.Za studij vpliva nevtronskega uksa je bilo uporabljenih sedem vzorcev, obsevanihs uksi od 2 10 8 do priblizno 5 10 15 n/cm 2 s (tabela 9.4). Razvoj efektivne koncentracijeprimesi (slika 9.10) in zapornega toka (slika 9.11) pri 60 Cnikazal sistematskih razlik, kibi jih lahko povezali s hitrostjo obsevanja. Na osnovi teh rezultatov lahko domnevamo,da je varno ekstrapolirati sevalne poskodbe z razpolozljivih nevtronskih izvorov na pogojev eksperimentih na LHC.9.5 Vpliv napajalne napetostiDo nedavnega je veljalo splosno prepricanje, da je nastanek in razvoj sevalnih poskodbneodvisen od napajalne napetosti. Natancen nadzor nad pogoji obsevanja in shranjevanjav okviru meritev tega dela, ki je vkljuceval tudi napajalno napetost, pa je pokazalnasprotne rezultate. Vzorci s polno napajalno napetostjo kazejo po koncanem okrevanju
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
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3. Irradiation Facility 43Figure 3.
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3. Irradiation Facility 45Figure 3.
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3. Irradiation Facility 47the inuen
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3. Irradiation Facility 49width of
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3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
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4Time Development of DefectsIn this
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4. Time Development ofDefects 57* F
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4. Time Development ofDefects 59val
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4. Time Development ofDefects 61for
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4. Time Development ofDefects 63Fig
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4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
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Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 127 and 128: 9. Povzetek doktorskega dela 1199.2
Page 129 and 130: 9. Povzetek doktorskega dela 121Sli
Page 131 and 132: 9. Povzetek doktorskega dela 123Ce
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Page 145 and 146: 9. Povzetek doktorskega dela 1379.6
Page 147 and 148: 10Appendix: List of Symbols and Abb
Page 149 and 150: 10. Appendix: List of Symbols and A
Page 151 and 152: References[1] J. Straver et al., Nu
Page 153 and 154: [27] A.M. Ougang et al.: Dierential
Page 155 and 156: [57] M. Huhtinen et al, HU-SEFT-R-1
Page 158: Izjavljam, da je disertacija rezult
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