Study of radiation damage in silicon detectors for high ... - F9

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106 7. Comparison with Other GroupsParameter biased unbiased global Batesg C [10 ;2 cm ;1 ] 4.00.6 2.20.4 1.770.07 2.50.3g Y [10 ;2 cm ;1 ] 5.40.8 5.60.9 4.60.3 5.90.3k Y 2(60 ) [10 ;18 cm 3 /s] 2.20.4 4.60.1 7.5 +15;2/Table 7.1: A comparison of reverse annealing parameters g C , g Y and k Y 2as obtained fromthe second order t (eq. 4.7). Values for biased samples is the average of samples I3, D3 andB3, table 4.4. g Y and k Y 2are however ambiguous due to partial bias at late stage of reverseannealing. Values for unbiased samples is the average for samples U3A and U3B, table 6.1. Inboth data 15% systematic error on the dosimetry is included in the quoted error. Results arecompared with a recent global survey [15] and results from S.J. Bates et al. [21].Parameter biased unbiased Ziockg C [10 ;2 cm ;1 ] 4.10.6 2.30.4 2.1g Y [10 ;2 cm ;1 ] 4.70.7 4.90.7 7.5k Y 1(60 )[10 ;6 s ;1 ] 3.90.6 8.20.3 12Table 7.2: A comparison of reverse annealing parameters g C , g Y and k Y 1as obtained from therst order t (eq. 4.6). Values for biased samples is the average of samples I3, D3 and B3, table4.4. g Y and k Y 1are ambiguous due to partial bias at late stage of reverse annealing. Values forunbiased samples is average for samples U3A and U3B, table 6.1. In both data 15% systematicerror on the dosimetry is included in the quoted error. Results are compared with values fromZiock parametrisation [45]. A relative damage factor 0.72 [57] was used to normalise Ziock data(647 and 800 MeV protons) to 1 MeV neutrons. Errors for Ziock datawere not given in [45].Parameter biased unbiased Ziock ROSEY (20 C) [10 ;10 cm ;1 s ;1 ] / 123 5.6 129Y (60 C) [10 ;7 cm ;1 s ;1 ] 2.20.5 3.30.5 2.5 64.5k link linTable 7.3: A comparison of reverse annealing parameters kYlin (see equation 4.10) at 20 C and60 C with results from ROSE report [13] and Ziock etal. [45]. g Y =(4:60:3)10 ;2 cm ;1 fromthe global data (table 7.1) was used with ROSE reverse annealing time constant. A relativedamage factor 0.72 [57] was used to normalise Ziock data (647 and 800 MeV protons) to 1 MeVneutrons. Errors for Ziock datawere not given in [45]. A 15% systematic error on the dosimetryis included in the error on our data.the eect of bias voltage as reported in this work. Parameters of long term annealing ofreverse current agree well with values, reported by M. Moll et al. [35].
7. Comparison with Other Groups 107 E E L L[10 ;17 A/cm] [h] [10 ;17 A/cm] [years]This work 1.25 0.3 1.7 0.6 0.29 0.08 7 6Moll 1.01 0.38 1.5 0.4 0.33 0.026 6.6 +45;4:6Table 7.4: A comparison of parameters of the long term annealing of reverse current (eq. 8.1)with results from M. Moll et al. [35]. A 15% systematic error on the dosimetry is included inthe error on our data.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
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3. Irradiation Facility 43Figure 3.
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3. Irradiation Facility 45Figure 3.
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3. Irradiation Facility 47the inuen
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3. Irradiation Facility 49width of
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3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
Page 101 and 102: 6. Inuence of Bias Voltage 93Figure
Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113: 7Comparison with Other GroupsWhile
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
Page 125 and 126: 9. Povzetek doktorskega dela 117sre
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Page 145 and 146: 9. Povzetek doktorskega dela 1379.6
Page 147 and 148: 10Appendix: List of Symbols and Abb
Page 149 and 150: 10. Appendix: List of Symbols and A
Page 151 and 152: References[1] J. Straver et al., Nu
Page 153 and 154: [27] A.M. Ougang et al.: Dierential
Page 155 and 156: [57] M. Huhtinen et al, HU-SEFT-R-1
Page 158: Izjavljam, da je disertacija rezult
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Study of radiation damage in silicon detectors for high ... - F9

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