Study of radiation damage in silicon detectors for high ... - F9

7Comparison with Other GroupsWhile no previous measurements of bias voltage eect and neutron ux inuence havebeen reported, a comparison of defect time-development parameters with values, reportedby other groups, is given below.A comparison of reverse annealing parameters as obtained from the second order twith a global survey, reported by A. Chilingarov et al. [15] and results obtained by S.J.Bates et al. [21] is given in table 7.1. A similar comparison was made for the rst ordert, using data reported by H.J. Ziock etal. [45] (table 7.2).The slope at the initial stage of reverse annealing can be compared with the resultsfrom Ziock [45] and ROSE report [13]. While Ziock uses a rst order model, second orderdynamics with the time constant inversely proportional to the uence is suggested in theROSE reportk Y ( eq )=k Y 01 eq e ; Eak B T(7.1)with k Y 0=(1:91:2)10 16 cm/s and E a =1.31 eV. From equations 4.9 and 4.10 one obtainskY lin = gY 2 k Y 0for the given model. A comparison with kYlin for 20 C (from table 4.6) andfor 60 C (from table 4.5) is given in the table 7.3.Results on long term annealing of reverse current were compared with results fromM. Moll et al. [35] (table 7.4). As already shown in section 4.4.2, all parameters agreewell within the given errors.To conclude, in all observed parameters good agreement of values for unbiasedsamples with results from other sources was found. This is however not the case for thebiased samples. For those, the value of g C is about twice the value from other sources,while reverse annealing constants as obtained by dierent methods show a systematicallylower values as compared to data from the literature. Those observations agree well with105