Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
Study of radiation damage in silicon detectors for high ... - F9
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6. Inuence <strong>of</strong> Bias Voltage 97Figure 6.7: a) Time development <strong>of</strong> N eff <strong>for</strong> the biased and unbiased diode from the pairBA2. They were kept at 15 C until the end <strong>of</strong> benecial anneal<strong>in</strong>g. Then they were movedto -7 C and bias <strong>of</strong> the diode BA2B was switched o. b) Time development <strong>of</strong> the dierence.Dierence <strong>in</strong> N eff normalised to the <strong>in</strong>itial value is shown versus time from switch<strong>in</strong>g o thebias. Agreement <strong>of</strong>atwo exponentials t (eq. 6.2) with the measured data is also shown.Figure 6.8: a) Time development <strong>of</strong> N eff <strong>for</strong> the biased and unbiased diode from the pairBA4. They were kept at 20 C until the end <strong>of</strong> benecial anneal<strong>in</strong>g. Then they were movedto 5 C and bias <strong>of</strong> the diode BA4B was switched o. b) Time development <strong>of</strong> the dierence.Dierence <strong>in</strong> N eff normalised to the <strong>in</strong>itial value is shown versus time from switch<strong>in</strong>g o thebias. Agreement <strong>of</strong>atwo exponentials t (eq. 6.2) with the measured data is also shown.