Study of radiation damage in silicon detectors for high ... - F9

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96 6. Inuence of Bias VoltageFigure 6.6: a) 1/C 2 vs. V plot and b) N eff distribution for the sample I3. Black dots showthe measurements before switching o the bias. Time development after switching the bias ois shown with coloured circles.After prolonged heat treatments, in the rst few days at 5 C a slight decrease(about 5%) in FDV as determined from C/V measurement has been noticed. To avoidthe inuence of this eect, C/V measurements at the late stage of reverse annealing weretaken about a week after transfer to 5 C, when a stable state was reached.6.2 Annealing of the Dierence in NeffAs shown in section 6.1.2 the minimal value of N eff as reached under bias is about twicelarger from the one with no bias applied. In this section results on annealing of thisdierence are presented.Samples D2, UO6, BA2 and BA4 were used to determine time constants of annealingof the dierence between biased and unbiased samples. In all four pairs biased diodes werekept under bias until the end of benecial annealing i.e. until the plateau in N eff wasreached. During this time they had been kept at 15 or 20 C as indicated in table 6.2. After
6. Inuence of Bias Voltage 97Figure 6.7: a) Time development of N eff for the biased and unbiased diode from the pairBA2. They were kept at 15 C until the end of benecial annealing. Then they were movedto -7 C and bias of the diode BA2B was switched o. b) Time development of the dierence.Dierence in N eff normalised to the initial value is shown versus time from switching o thebias. Agreement ofatwo exponentials t (eq. 6.2) with the measured data is also shown.Figure 6.8: a) Time development of N eff for the biased and unbiased diode from the pairBA4. They were kept at 20 C until the end of benecial annealing. Then they were movedto 5 C and bias of the diode BA4B was switched o. b) Time development of the dierence.Dierence in N eff normalised to the initial value is shown versus time from switching o thebias. Agreement ofatwo exponentials t (eq. 6.2) with the measured data is also shown.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
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3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 135 and 136: 9. Povzetek doktorskega dela 127Cep
Page 137 and 138: 9. Povzetek doktorskega dela 129Mer
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Page 145 and 146: 9. Povzetek doktorskega dela 1379.6
Page 147 and 148: 10Appendix: List of Symbols and Abb
Page 149 and 150: 10. Appendix: List of Symbols and A
Page 151 and 152: References[1] J. Straver et al., Nu
Page 153 and 154: [27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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