Study of radiation damage in silicon detectors for high ... - F9

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94 6. Inuence of Bias VoltageFigure 6.4: Comparison of plateaus of N eff = eq for a sample biased during and after irradiation(D2A), biased during (6.5 h) and unbiased after the irradiation (S3A), unbiased during (6.5 h)and biased after irradiation (S3B) and sample unbiased during and after irradiation (D2B).value of the sample S3B is in-between. This can be explained by fast annealing that tookplace during the irradiation when this sample was unbiased.This behaviour could be explained by assuming that the presence of electric elddoes not aect the defect introduction rates, while it inuences their time development.This could be easily understood if defects are charged and reactions responsible for timedevelopment are diusion limited. Then the electric eld would inuence defect movementthrough the crystal, thus aecting reaction rates responsible for annealing. A reaction ofthe typeA + B ! C (6.1)where A is an active defect, B a charged, mobile defect and C an inactive defect couldpresent aviablemodel.6.1.3 Study of a Partially Depleted DiodeDiode I3 was irradiated to 510 13 n/cm 2 and annealed at 60 C for two months. Afterthat it was irradiated to 4.610 13 n/cm 2 , followed by three weeks at 60 C. During all
6. Inuence of Bias Voltage 95Figure 6.5: a) 1/C 2 vs. V plot and b) N eff distribution for the sample I3 after the end of heattreatment. Two regions with dierent N eff , corresponding to dierent biasing conditions,, canbe clearly seen.this time it was biased to 200 V. This means that at least after the second irradiation thesample was only partially biased during all of the annealing stage, causing part of it toanneal depleted and part undepleted. 1/C 2 vs. V plot after this procedure is shown ingure 6.5, together with the distribution of N eff through the sample width as determinedfrom the C/V measurement according to equations 2.44 and 2.45. At 200 V a kink inthe slope of the 1/C 2 vs. V curve can be clearly seen. Since the sample was kept at 200V during all the time, the position of the kink agrees well with the border between thedepleted and non-depleted regions. The corresponding dierence in N eff is about a factorof two (gure 6.5b).To conrm the correlation between the dierence in N eff and biasing conditions,the bias was switched o. About one third of the dierence annealed out in the rst dayat 20 C (g. 6.6 red points) but no additional change developed in the following twoweeks. To accelerate the processes, the sample was heated to 60 C. Measurements after7 h (green points), one day (blue points) and 4.5 days (magenta points) are also shownin gure 6.6. One can see that N eff concentration in the region that used to be depletedis slowly decreasing towards the value of the non-depleted region where no signicantchange in N eff is observed. This shows that defects, whose annealing is inhibited by theelectric eld, remain in silicon also during long term annealing. They start annealing out,however, upon switching o the bias.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
Page 99 and 100: 6. Inuence of Bias Voltage 91energy
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Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
Page 125 and 126: 9. Povzetek doktorskega dela 117sre
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Page 135 and 136: 9. Povzetek doktorskega dela 127Cep
Page 137 and 138: 9. Povzetek doktorskega dela 129Mer
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Page 145 and 146: 9. Povzetek doktorskega dela 1379.6
Page 147 and 148: 10Appendix: List of Symbols and Abb
Page 149 and 150: 10. Appendix: List of Symbols and A
Page 151 and 152: References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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