Study of radiation damage in silicon detectors for high ... - F9

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92 6. Inuence of Bias VoltageSample producer V 0 FD [V] T [ C] eq [n/cm 2 s] eq [10 14 n/cm 2 ] V bias [V]S3A Micron 32. 15 + 1.910 9 0.45 200/0 S3B Micron 34. 15 + 1.910 9 0.45 0/200 D2A Micron 17. 15 1.810 10 0.42 300D2B Micron 17. 15 1.810 10 0.42 0UO6B Sintef 35. 20 1.810 11 1.7 1000/600 yUO6S Sintef 35. 20 1.810 11 1.7 0BA2B Sintef 44. 15 2.110 11 # 1.0 # 500BA2S Sintef 44. 15 2.110 11 # 1.0 # 0BA4B Sintef 40. 20 2.110 11 # 1.0 # 600BA4S Sintef 36. 20 2.110 11 # 1.0 # 0Table 6.2: List of diodes used to study the eect of bias voltage on defect development.Thickness of samples was 3005 m.+ ) Diodes S3 were kept at bout 27 C after transfer to the laboratory to accelerate annealing.When annealed, they were moved to 20 C to study annealing of the dierence in N eff . )DiodeS3Awas biased during and unbiased after the irradiation. ) Diode S3B was unbiased during and biased after the irradiation.y Diode UO6A was biased to 1000V at the reactor and to 600V at the laboratory. Bias voltagecould be reduced due to annealing of FDV.# ) Due to frequent changes in the reactor core at the time of irradiation, the neutron spectrumwas not well known. This induced an error on dosimetry, larger than the usual 15%.a consequence of slow annealing of bias dependent dierence. It could also be explainedif reverse annealing was caused by reaction of charged defects and consequently sloweddown in electric eld. Available data however do not allow for unambiguous distinctionbetween these two possibilities. The dierence could not be explained by partial bias,since it develops already at an early stage of reverse annealing, when biasing voltage of200 V was still above FDV of the biased samples. This dierence in reverse annealing ofbiased and unbiased samples also contributes to the error in determination of the reverseannealing reaction constants of the partially biased samples as discussed in section 4.2.For further studies we wished to minimise the inuence of any uncontrolled parametersand to avoid errors from uence measurements. Thus diodes were irradiated andmonitored in pairs, with a biased and unbiased diode in each pair. Both diodes were takenfrom the same wafer to minimise the risk of dierence caused by material. Five pairs aslisted in table 6.2 were studied this way. Samples S3 and D2 were Micron oat-zone p + -n-n + diodes with 3 guard rings and an active area of 11 cm 2 . Samples UO6, BA2 andBA4 were p + -n-n + planar diodes processed by Sintef. They had a multiple guard-ringstructure that was not connectable and thus oating. Samples marked with last letter
6. Inuence of Bias Voltage 93Figure 6.3: Comparison time development of N eff for a sample biased (D2A) and unbiased(S3A) after irradiation. Both samples were biased during irradiation and keptat15 C.B had 66mm 2 active area and those marked S 33 mm 2 active area. All diodes were300 m thick.Diodes D2A and S3A were used to determine the origin of the dierence betweenbiased and unbiased samples. It could originate in bias dependent creation rates or be aconsequence of defect reactions being aected by the electric eld. To distinguish thesetwo scenaria, D2A was biased during and after irradiation, while diode S3A was biasedduring and unbiased after irradiation. Time development of N eff at 15 during the rstfew days after irradiation is shown in gure 6.3. The diode unbiased after irradiationexhibits alower N eff than the biased one 38 .At later stages of annealing we can also compare those two samples with theirpartners, unbiased during irradiation (gure 6.4). While diode D2B was unbiased bothduring and after the irradiation, diode S3B was biased with 200 V after the irradiation.Comparison of N eff for all four samples at the plateau shows that both samples, unbiasedafter the irradiation (S3A and D2B), annealed to an equal N eff . It also agrees well withthe minimal N eff of the U3 samples (g. 6.2). Plateau of the D2A sample is about twotimes higher and agrees well with biased samples B3, I3 and D3 (g. 6.2). The plateau38The dierence at the end of irradiation can be explained by annealing during irradiation, since theirradiation time was 39 minutes for diode D2A and 6.5 hours for S3A. This dierence however becomesirrelevant after a few days of annealing.
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UNIVERSITY OF LJUBLJANAFACULTY OF M
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Najprej gre moja zahvala delovnima
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PovzetekSevalne poskodbe v siliciju
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3.5 Measurement Setup, Methods and
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1IntroductionSilicon detectors play
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1. Introduction 7Figure 1.2: Schema
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1. Introduction 9R(cm)Z(cm)Figure 1
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2Operation and Radiation Damage of
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2. Operation and Radiation Damage o
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3Irradiation Facility3.1 The Reacto
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3. Irradiation Facility 373.3 Irrad
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3. Irradiation Facility 39Fission p
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Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
Page 61 and 62: 3. Irradiation Facility 53percent.
Page 63 and 64: 4Time Development of DefectsIn this
Page 65 and 66: 4. Time Development ofDefects 57* F
Page 67 and 68: 4. Time Development ofDefects 59val
Page 69 and 70: 4. Time Development ofDefects 61for
Page 71 and 72: 4. Time Development ofDefects 63Fig
Page 87 and 88: 4. Time Development ofDefects 79An
Page 89 and 90: 5Dose Rate Dependence5.1 Motivation
Page 91 and 92: 5. Dose Rate Dependence 83Figure 5.
Page 93 and 94: 5. Dose Rate Dependence 85Figure 5.
Page 95 and 96: 5. Dose Rate Dependence 87could be
Page 97 and 98: 6Inuence of Bias VoltageIt was a ge
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Page 103 and 104: 6. Inuence of Bias Voltage 95Figure
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Page 107 and 108: 6. Inuence of Bias Voltage 99that t
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Page 113 and 114: 7Comparison with Other GroupsWhile
Page 115 and 116: 7. Comparison with Other Groups 107
Page 117 and 118: 8ConclusionsA systematic study of r
Page 119 and 120: 8. Conclusions 111Implications for
Page 121 and 122: 9Povzetek doktorskega dela9.1 UvodS
Page 123 and 124: 9. Povzetek doktorskega dela 115Ski
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Page 135 and 136: 9. Povzetek doktorskega dela 127Cep
Page 137 and 138: 9. Povzetek doktorskega dela 129Mer
Page 139 and 140: 9. Povzetek doktorskega dela 131Sam
Page 145 and 146: 9. Povzetek doktorskega dela 1379.6
Page 147 and 148: 10Appendix: List of Symbols and Abb
Page 149 and 150: 10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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