Study of radiation damage in silicon detectors for high ... - F9

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3.5 Measurement Setup, Methods and Analysis . . . . . . . . . . . . . . . . . . 463.5.1 Laboratory Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . 463.5.2 C/V Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . 473.5.3 Bulk Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 513.6 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 534. Time Development of Defects 554.1 Fast Annealing of N eff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 554.2 Reverse Annealing of N eff . . . . . . . . . . . . . . . . . . . . . . . . . . . 594.2.1 Reaction Kinematics Fit . . . . . . . . . . . . . . . . . . . . . . . . 594.2.2 Initial Slope Fit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 634.2.3 Test of Boron Reactivation Model . . . . . . . . . . . . . . . . . . . 704.3 Results on Annealing of MESA Samples . . . . . . . . . . . . . . . . . . . 714.4 Annealing of Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . 744.4.1 Fast Annealing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 744.4.2 Long Term Annealing . . . . . . . . . . . . . . . . . . . . . . . . . 764.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 785. Dose Rate Dependence 815.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 815.2 Results on N eff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825.3 Results on Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . 855.4 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 866. Inuence of Bias Voltage 896.1 Inuence on N eff . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 896.1.1 Time Development of Unbiased Samples . . . . . . . . . . . . . . . 896.1.2 Comparison of Biased and Unbiased Samples . . . . . . . . . . . . . 916.1.3 Study ofaPartially Depleted Diode . . . . . . . . . . . . . . . . . . 946.2 Annealing of the Dierence in N eff . . . . . . . . . . . . . . . . . . . . . . 966.2.1 Time Constants and Activation Energy . . . . . . . . . . . . . . . . 996.2.2 Bistability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1016.3 Inuence on Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . 1026.4 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1037. Comparison with Other Groups 1058. Conclusions 1099. Povzetek doktorskega dela 1139.1 Uvod . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1139.1.1 Osnove delovanja . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1149.1.2 Tvorba sevalnih poskodb . . . . . . . . . . . . . . . . . . . . . . . . 115
39.2 Reaktor, merilni sistem in metode . . . . . . . . . . . . . . . . . . . . . . . 1189.2.1 Reaktor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1189.2.2 Merilni sistem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1199.2.3 Opis meritve in analize podatkov . . . . . . . . . . . . . . . . . . . 1209.3 Casovni razvoj poskodb . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1229.3.1 Uvod . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1229.3.2 Hitro okrevanje N eff . . . . . . . . . . . . . . . . . . . . . . . . . . 1249.3.3 Obratno okrevanje N eff . . . . . . . . . . . . . . . . . . . . . . . . 1279.3.4 Okrevanje zapornega toka . . . . . . . . . . . . . . . . . . . . . . . 1299.4 Vpliv uksa nevtronov . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1319.5 Vpliv napajalne napetosti . . . . . . . . . . . . . . . . . . . . . . . . . . . 1339.6 Zakljucek . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13710.Appendix: List of Symbols and Abbreviations 139References 143
Page 1: UNIVERSITY OF LJUBLJANAFACULTY OF M
Page 5: Najprej gre moja zahvala delovnima
Page 8 and 9: PovzetekSevalne poskodbe v siliciju
Page 13 and 14: 1IntroductionSilicon detectors play
Page 15 and 16: 1. Introduction 7Figure 1.2: Schema
Page 17 and 18: 1. Introduction 9R(cm)Z(cm)Figure 1
Page 19 and 20: 2Operation and Radiation Damage of
Page 21 and 22: 2. Operation and Radiation Damage o
Page 43 and 44: 3Irradiation Facility3.1 The Reacto
Page 45 and 46: 3. Irradiation Facility 373.3 Irrad
Page 47 and 48: 3. Irradiation Facility 39Fission p
Page 49 and 50: 3. Irradiation Facility 413.4 Irrad
Page 51 and 52: 3. Irradiation Facility 43Figure 3.
Page 53 and 54: 3. Irradiation Facility 45Figure 3.
Page 55 and 56: 3. Irradiation Facility 47the inuen
Page 57 and 58: 3. Irradiation Facility 49width of
Page 59 and 60: 3. Irradiation Facility 51The full
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3. Irradiation Facility 53percent.
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4Time Development of DefectsIn this
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4. Time Development ofDefects 57* F
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4. Time Development ofDefects 59val
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4. Time Development ofDefects 61for
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4. Time Development ofDefects 63Fig
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4. Time Development ofDefects 79An
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5Dose Rate Dependence5.1 Motivation
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5. Dose Rate Dependence 83Figure 5.
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5. Dose Rate Dependence 85Figure 5.
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5. Dose Rate Dependence 87could be
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6Inuence of Bias VoltageIt was a ge
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6. Inuence of Bias Voltage 91energy
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6. Inuence of Bias Voltage 93Figure
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6. Inuence of Bias Voltage 99that t
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6. Inuence of Bias Voltage 101(abou
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6. Inuence of Bias Voltage 103Figur
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7Comparison with Other GroupsWhile
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7. Comparison with Other Groups 107
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8ConclusionsA systematic study of r
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8. Conclusions 111Implications for
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9Povzetek doktorskega dela9.1 UvodS
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9. Povzetek doktorskega dela 115Ski
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9. Povzetek doktorskega dela 117sre
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9. Povzetek doktorskega dela 1199.2
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9. Povzetek doktorskega dela 121Sli
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9. Povzetek doktorskega dela 123Ce
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9. Povzetek doktorskega dela 127Cep
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9. Povzetek doktorskega dela 129Mer
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9. Povzetek doktorskega dela 131Sam
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9. Povzetek doktorskega dela 1379.6
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10Appendix: List of Symbols and Abb
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10. Appendix: List of Symbols and A
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References[1] J. Straver et al., Nu
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[27] A.M. Ougang et al.: Dierential
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[57] M. Huhtinen et al, HU-SEFT-R-1
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Izjavljam, da je disertacija rezult
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