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Charge Transfer Luminescence of Yb3+

Charge Transfer Luminescence of Yb3+

Charge Transfer Luminescence of Yb3+

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184L. van Pieterson et al. / Journal <strong>of</strong> <strong>Luminescence</strong> 91 (2000) 177–193Table 4Positions <strong>of</strong> the charge transfer emission and absorption bands for Yb 3+ in NaREO 2 and LiREO 2 host lattices. For decay time (t)measurements (at 10 K) and determination <strong>of</strong> the quenching temperature ðT q Þ, the CT ! 2 F 7/2 emission is monitoredAbsorption (nm) Emission (nm) Stokes shift (cm 1 ) tðnsÞ T q ðKÞNaScO 2 208 322, 431 15 000 130 225NaLaO 2 262 } } } }LiScO 2 206 312, 448 16 000 190 180LiYO 2 214 355, 495 16 500 55 125LiLaO 2 252 } } } }Fig. 7. Reflection spectra <strong>of</strong> Y 2 O 3 (broken line) and Y 2 O 3doped with 3% Yb 3+ (solid line), measured at 10 K.3.3. AluminatesThe reflection spectra <strong>of</strong> the Y 3 Al 5 O 12 (YAG)host lattice and YAG doped with 2% Yb 3+ areshown in Fig. 9. At 178 nm the host latticeabsorption edge is observed. When Yb 3+ is incorporatedin the lattice, an extra absorption band isobserved at 209 nm, which is assigned to thetransition from the 2 F 7/2 ground state <strong>of</strong> Yb 3+ tothe charge transfer state.Fig. 10 shows the emission and excitationspectra <strong>of</strong> YAG and YAG : Yb 3+ . In the emissionspectrum <strong>of</strong> undoped YAG, host lattice luminescenceis observed at 256 nm. When exciting atlonger wavelengths defect emission around 450 nmis observed. In the Yb 3+ -doped samples strongemission bands are observed at 334 and 493 nmwhich are not present in the emission spectrum <strong>of</strong>the undoped sample. The energy separationbetween the bands is close to 10 000 cm 1 . Basedon these observations, the bands are assigned toCT luminescence from Yb 3+ . In the excitationspectrum <strong>of</strong> the 343 nm emission, the CT excitationband is observed at 210 nm, in agreement withthe position in the reflection spectrum. TheStokes shift <strong>of</strong> the charge transfer transition issome 17 500 cm 1 and the FWHM <strong>of</strong> both bandsis 6000 cm 1 . The decay time measured for theYb 3+ charge transfer luminescence is 30 5ns at10 K, much shorter than the decay times which aretypically observed for the Yb 3+ CT emission100–200 ns) at low temperatures. Probably, thecharge transfer luminescence is already partlyquenched at very low temperatures. The relativelyhigh intensity <strong>of</strong> the 2 F 5/2 ! 2 F 7/2 transitioncompared to the charge transfer luminescence alsosuggests that the CT emission is already partlyquenched at 10 K.In Fig. 11, the CT luminescence intensity and itsdecay time are given as a function <strong>of</strong> temperature.The immediate decrease in intensity in the lowtemperatureregion confirms that the luminescenceTable 5Positions <strong>of</strong> emission and absorption bands for undoped andYb 3+ -doped oxides RE 2 O 3 (RE=Sc, Y). For the undopedoxides, the absorption edge is given, for the Yb 3+ -doped oxidesthe CT absorption maximum is given. For decay time ðtÞmeasurements and determination <strong>of</strong> the quenching temperatureðT q Þ, the CT ! 2 F 7/2 emission is monitoredAbsorption(nm)Emission(nm)Stokesshift(cm 1 )tðnsÞ T q (K)Sc 2 O 3 196 Not measuredY 2 O 3 208 370Sc 2 O 3 :Yb 3+ 225 367, 485 14 000 13 530(very weak)Y 2 O 3 :Yb 3+ 227 368, 533 15 500 72 130

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