Simulator

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SIMULATION SCHEMEDEFECT TYPES1. POINT DEFECTS• SINGLE POINT DEFECTS: V, I, B, C, ...– POSSIBLE EVENT: JUMPJrate = 6 * D o * exp ( -Ea / kT) / L 2• PAIR POINT DEFECTS: IB, Bi, VO, ...– POSSIBLE EVENTS:• JUMP:• BREAK UP:• SWITCH:IB → I + BIB → BiINTERACTION BETWEEN DEFECTS:– CAPTURE RADIUS = 3.84 Å– WITH / WITHOUT AN INTERACTION BARRIER
SIMULATION SCHEMEDEFECT TYPES2. CLUSTERS {311}’s• SHAPES:– IRREGULAR (blob): V, B, C, ...– SPECIFIC:• VOIDS• {311}’s• DISLOCATION LOOPS• STACKING FAULTS• POSSIBLE EVENTS:– CAPTURE of a point defect– EMISSION of a point defect
Page 1: Kinetic Monte Carlo Simulation:an A
Page 4 and 5: Atomistic SimulationofDiffusion and
Page 8 and 9: DEFECT TYPES3. COMPLEXESCOMPOSITION
Page 10 and 11: SIMULATION SCHEDULEREXAMPLE: n J ra
Page 12 and 13: SIMULATION EXAMPLES
Page 14 and 15: Anomalous Boron Diffusionin Silicon
Page 16 and 17: Ion Implantation damage in Si:{311}
Page 18 and 19: DADOS simulation40 keV Si implantaf
Page 20 and 21: Interstitial Supersaturation vs. An
Page 22 and 23: Discreteness of Channel Dopants =>A
Page 24 and 25: Radial Distribution FunctionBlue: R
Page 27 and 28: 0.12 µm MOSFET
Page 30 and 31: KINETIC LATTICE MONTECARLO SIMULATI
Page 32 and 33: DEPOSITION!Random initial position
Page 35 and 36: SIMULATION RESULTS“Wetting substr
Page 37 and 38: Channeling Implants:Relevance of th
Page 39 and 40: SIMSThis WorkCai et al.,Phys. Rev.
Page 41: Conclusions• Atomistic Process Si

Simulator

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