Simulator

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DEPOSITION!Random initial position on the top of the simulation boxRandom velocity angles according to the desired angle distribution.! Atom travels in a straight line until either:" It finds some neighbors:it finally get attached to the lower energy sitein the neighborhood" It finds no neighbors: It starts a new orientation.
GRAIN BOUNDARIESJump to the Site which minimizes the energy:Grain growth competitionA1B1A2
Page 1: Kinetic Monte Carlo Simulation:an A
Page 4 and 5: Atomistic SimulationofDiffusion and
Page 6 and 7: SIMULATION SCHEMEDEFECT TYPES1. POI
Page 8 and 9: DEFECT TYPES3. COMPLEXESCOMPOSITION
Page 10 and 11: SIMULATION SCHEDULEREXAMPLE: n J ra
Page 12 and 13: SIMULATION EXAMPLES
Page 14 and 15: Anomalous Boron Diffusionin Silicon
Page 16 and 17: Ion Implantation damage in Si:{311}
Page 18 and 19: DADOS simulation40 keV Si implantaf
Page 20 and 21: Interstitial Supersaturation vs. An
Page 22 and 23: Discreteness of Channel Dopants =>A
Page 24 and 25: Radial Distribution FunctionBlue: R
Page 27 and 28: 0.12 µm MOSFET
Page 30 and 31: KINETIC LATTICE MONTECARLO SIMULATI
Page 35 and 36: SIMULATION RESULTS“Wetting substr
Page 37 and 38: Channeling Implants:Relevance of th
Page 39 and 40: SIMSThis WorkCai et al.,Phys. Rev.
Page 41: Conclusions• Atomistic Process Si

Simulator

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