Simulator

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Radial Distribution FunctionBlue: RandomRed: Cascades=> The diffusion process fullyrandomizes any localinhomogeneities due to clusters
However, diffusion of charged pointdefects could still give rise to spacecorrelation (local fluctuations).In fact, similar effects have beenshown to occur in the oxide chargedistribution in MOS structures => increasein the effective mobility.F. Gamiz et al., Semic. Sci. And Technol. 9, 1102-1107 (1994)
Page 1: Kinetic Monte Carlo Simulation:an A
Page 4 and 5: Atomistic SimulationofDiffusion and
Page 6 and 7: SIMULATION SCHEMEDEFECT TYPES1. POI
Page 8 and 9: DEFECT TYPES3. COMPLEXESCOMPOSITION
Page 10 and 11: SIMULATION SCHEDULEREXAMPLE: n J ra
Page 12 and 13: SIMULATION EXAMPLES
Page 14 and 15: Anomalous Boron Diffusionin Silicon
Page 16 and 17: Ion Implantation damage in Si:{311}
Page 18 and 19: DADOS simulation40 keV Si implantaf
Page 20 and 21: Interstitial Supersaturation vs. An
Page 22 and 23: Discreteness of Channel Dopants =>A
Page 27 and 28: 0.12 µm MOSFET
Page 30 and 31: KINETIC LATTICE MONTECARLO SIMULATI
Page 32 and 33: DEPOSITION!Random initial position
Page 35 and 36: SIMULATION RESULTS“Wetting substr
Page 37 and 38: Channeling Implants:Relevance of th
Page 39 and 40: SIMSThis WorkCai et al.,Phys. Rev.
Page 41: Conclusions• Atomistic Process Si

Simulator

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