Simulator

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Discreteness of Channel Dopants =>Average Shift ofThreshold VoltageH.S Wong and Y. Taur, IEDM 93 A. Asenov, IEDM 98
=> Do the local inhomogeneitiesdue to clusters induce a spatialcorrelation in the dopant atoms?Comparison between same dopantdepth distributions generated:•Randomly•With the actual ion cascades
Page 1: Kinetic Monte Carlo Simulation:an A
Page 4 and 5: Atomistic SimulationofDiffusion and
Page 6 and 7: SIMULATION SCHEMEDEFECT TYPES1. POI
Page 8 and 9: DEFECT TYPES3. COMPLEXESCOMPOSITION
Page 10 and 11: SIMULATION SCHEDULEREXAMPLE: n J ra
Page 12 and 13: SIMULATION EXAMPLES
Page 14 and 15: Anomalous Boron Diffusionin Silicon
Page 16 and 17: Ion Implantation damage in Si:{311}
Page 18 and 19: DADOS simulation40 keV Si implantaf
Page 20 and 21: Interstitial Supersaturation vs. An
Page 24 and 25: Radial Distribution FunctionBlue: R
Page 27 and 28: 0.12 µm MOSFET
Page 30 and 31: KINETIC LATTICE MONTECARLO SIMULATI
Page 32 and 33: DEPOSITION!Random initial position
Page 35 and 36: SIMULATION RESULTS“Wetting substr
Page 37 and 38: Channeling Implants:Relevance of th
Page 39 and 40: SIMSThis WorkCai et al.,Phys. Rev.
Page 41: Conclusions• Atomistic Process Si

Simulator

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