Simulator

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SIMULATION SCHEDULEREXAMPLE: n J rateTotal(jumps/s) Jumps/sV 2 1000 2000I 5 10 50• To simulate 1 second anneal we need to simulate2050 Jumps ⇒ ∆t = 1/2050 seconds per Jump• We have to pick up V’s and I’s with a probability of2000/2050 and 50/2050, respectively.
DIFFUSION SIMULATORSOLVE:CONTINUUMdI/dt = D d 2 I/dx 2 -R BulkTO SIMULATE:I + V ↔ 0ATOMISTICPROGRAM:annihilate(I);annihilate(V);TO ADD NEW MECHANISM:I + B s ↔ BSOLVE:IPROGRAM:dI/dt = D d 2 I/dx 2 -K IF B s I + K IR B I -R Bulkannihilate(I);d B I /dt = D dB 2 I /dx 2 + K BIF B s I - K BIR BBII annihilate(B S );create(Bd B S /dt = - K BSF B s I + K BSR B I );I⇒ ALMOST NO ADDITIONAL COMPUTATION TIME
Page 1: Kinetic Monte Carlo Simulation:an A
Page 4 and 5: Atomistic SimulationofDiffusion and
Page 6 and 7: SIMULATION SCHEMEDEFECT TYPES1. POI
Page 8 and 9: DEFECT TYPES3. COMPLEXESCOMPOSITION
Page 12 and 13: SIMULATION EXAMPLES
Page 14 and 15: Anomalous Boron Diffusionin Silicon
Page 16 and 17: Ion Implantation damage in Si:{311}
Page 18 and 19: DADOS simulation40 keV Si implantaf
Page 20 and 21: Interstitial Supersaturation vs. An
Page 22 and 23: Discreteness of Channel Dopants =>A
Page 24 and 25: Radial Distribution FunctionBlue: R
Page 27 and 28: 0.12 µm MOSFET
Page 30 and 31: KINETIC LATTICE MONTECARLO SIMULATI
Page 32 and 33: DEPOSITION!Random initial position
Page 35 and 36: SIMULATION RESULTS“Wetting substr
Page 37 and 38: Channeling Implants:Relevance of th
Page 39 and 40: SIMSThis WorkCai et al.,Phys. Rev.
Page 41: Conclusions• Atomistic Process Si

Simulator

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