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ALPHANUMERIC INDEX TO DATA SHEETSSMJ2516SMJ2532SMJ2564SMJ2708SMJ27L08SMJ4164Page6-16-116-216-316-314-39SMJ4416 .................... 4-85SMJ5517 .................... 8-25TM4164EC4 .................. 5-1TM4164EL9 .................. 5-5TM4164FL8 .................. 5-9TMS2114 .................... 8-1TMS2114L ................... 8-1TMS2150 .................... 8-7TMS2516 .................... 6-1TMS2532 .................... 6-11TMS2564 .................... 6-21TMS2708 .................... 6-31TMS27L08 ................... 6-31TMS2732A ................... 6-47TMS2764TMS4016TMS4044TMS40L44TMS4116TMS4161TMS4164TMS4256TMS4257 .................. .TMS4416 .................. .TMS4464 .................. .TMS4500A ................. .TMS4664 .................. .TMS4732 .................. .TMS4764 .................. .TMS4964 .................. .TMS27128 ................. .TMS47128 ................ ..TMS47256 ................. .Page6-538-13 Q)"C8-19 '58-19 e,:,4-1 t:4-150'';::::;4-39 CJQ)4-63 1)C/)4-634-85 0...4-107 t:Q)4-125 ...t:7-1 0(,J7-7....7-13 0Q)7-196-61:sCO7-27 I-7-37 >
Page 1: SMYOOO2.,MOS MemoryData Book1984II
Page 10 and 11: •(')o,..,..::JCD::J~tnCDCDCO),~.o
Page 12 and 13: ...l>-6':::rQ)::::JC3C'D...CS'5'c.C
Page 14 and 15: »-6':sO):::sc3CD...n':::sc.CD?
Page 16 and 17: .....(1)S"("):::rQ)~cc(1)Q)g;::;"
Page 18 and 19: INTERCHANGEABILITY GUIDEELECTRONIC
Page 20 and 21: INTERCHANGEABILITY GUIDEINTEL...:::
Page 22 and 23: INTERCHANGEABILITY GUIDENIPPON ELEC
Page 24 and 25: INTERCHANGEABILITY GUIDEPART II -SE
Page 26 and 27: INTERCHANGEABILITY GUIDEEPROMSORGAN
Page 28 and 29: G)5"enenD)~-
Page 30 and 31: GLOSSARY/TIMING CONVENTIONS/DATA SH
Page 32 and 33: GLOSSARY /TIMING CONVENTIONS/DATA S
Page 38 and 39: C)0"(I)(I)C)..'
Page 40 and 41: C'
Page 42 and 43: TMS411616,384·81T DYNAMIC RANDOM·
Page 44 and 45: TMS411616,384-8IT DYNAMIC RANDOM-AC
Page 46 and 47: TMS411616,384·BIT DYNAMIC RANDOM·
Page 48 and 49: 1MS411616,384·811 DYNAMIC RANDOM·
Page 50 and 51: TMS411616,384·8IT DYNAMIC RANDOM·
Page 52 and 53: of"~I\JzI~~RASCASADDRESSESw01V,H -.
Page 54 and 55:
TMS411616,384·81T DYNAMIC RANDOM·
Page 56 and 57:
TMS416165.536·81T MULTIPORT MEMORY
Page 58 and 59:
TMS416165,536·BIT MULTIPORT MEMORY
Page 60 and 61:
TMS416165,536·81T MUL TIPORT MEMOR
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TMS416165,536·81T MULTIPORT MEMORY
Page 64 and 65:
TMS416165,536-BIT MULTIPORT MEMORYr
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TMS416165,536-8IT MULTIPORT MEMORYw
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~~~:;;z0_+>-N(Xl;;c ~~~d.~~t!'J~z~@
Page 70 and 71:
f'woz~~~~~RAS VIH~. rl 'wIRLIS9~!1\
Page 72 and 73:
TMS416165,536·81T MULTIPORT MEMORY
Page 74 and 75:
TMS416165,536-81T MUL TIPORT MEMORY
Page 76 and 77:
2l~~f"wCJ)i'i_;;;z;:;c ~~~d . ~~lTl
Page 78 and 79:
om
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TMS4164, SMJ416465,536·BIT DYNAMIC
Page 82 and 83:
TMS4164, SMJ416465,536-8IT DYNAMIC
Page 84 and 85:
TMS416465,536·BIT DYNAMIC RANDOM·
Page 86 and 87:
1MS416465.536·811 DYNAMIC RANDOM·
Page 88 and 89:
SMJ416465.536·811 DYNAMIC RANDOM·
Page 90 and 91:
SMJ416465,536-811 DYNAMIC RANDOM-AC
Page 92 and 93:
SMJ416465,536-811 DYNAMIC RANDOM-AC
Page 94 and 95:
SMJ416465,536-8IT DYNAMIC RANDOM-AC
Page 96 and 97:
TMS4164. SMJ416465.536"8IT DYNAMIC
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TMS4164, SMJ416465,536·BIT DYNAMIC
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~0,oz~i~RASCASAO-A7WoNOTE:sa:>!l\ac
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TMS4164, SMJ416465,536-81T DYNAMIC
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TMS4256, TMS4257262,144·81T DYNAMI
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TMS4256, TMS4257262,144·81T DYNAMI
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TMS4256, TMS4257262,144·8IT DYNAMI
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TMS4256, TMS4257262,144·811 DYNAMI
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TMS4256, TMS4257262,144"81T DYNAMIC
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TMS4256, TMS4257262,144·81T DYNAMI
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TMS4257262,144·8IT DYNAMIC RANDOM
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. 14--1 th(RLCA)~1TMS4257262, 144·
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~CooZ~d~~.~RASCASAO-ASWoNOTE:sao!l\
Page 122 and 123:
TMS4256. TMS4257262.144·8IT DYNAMI
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c-
Page 126 and 127:
TMS4416, SMJ441616,384·WORD BY 4·
Page 128 and 129:
TMS4416, SMJ441616,384·WDRD BY 4·
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TMS441616,384·WORD BY 4·81T DYNAM
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TMS441616,384·WORD BY 4·BIT DYNAM
Page 134 and 135:
SMJ441616,384·WDRD BY 4·B11 DYNAM
Page 136 and 137:
SMJ441616,384·WORD BY 4·B11 DYNAM
Page 138 and 139:
SMJ441616,384·WORD BY 4·B11 DYNAM
Page 140 and 141:
TMS4416, SMJ441616,384-WORD BY 4-BI
Page 142 and 143:
TMS4416, SMJ441616,384-WORD BY 4-BI
Page 144 and 145:
C3~~.....o.po.3n_;z~~;;;c ~ ;O~d~~J
Page 146 and 147:
TMS4416, SMJ441616,384·WORD BY 4·
Page 148 and 149:
TMS446465,536·WORD BY 4-BIT DYNAMI
Page 150 and 151:
TMS446465,536-WORD BY 4-BIT DYNAMIC
Page 152 and 153:
Page 154 and 155:
TMS446465,536-WORD BY 4-BIT DYNAMIC
Page 156 and 157:
TMS446465,536·WORD BY 4,BIT DYNAMI
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Page 160 and 161:
"Vo~.... f"I\)on_~;;;z~~d. ~~tTl~z~
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Page 164 and 165:
c-~Q)::lCo~(t)3o ..,-
Page 166 and 167:
TMS4500ADYNAMIC RAM CONTROLLERBLOCK
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TMS4500ADYNAMIC RAM CONTROLLERTABLE
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TMS4500ADYNAMIC RAM CONTROLLERtimin
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERready
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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c-
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ATTENTIONThese devices contain circ
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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c-s:s:o0-CCDen5-4
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1M4164EL965,536 BY 9-B11 DYNAMIC RA
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5-8
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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TI EPROMS INCORPORATE FAST PROGRAMM
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1MS2516, SMJ251616,384-B11 ERASABLE
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1MS251616.384-BI1 ERASABLE PROGRAMM
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SMJ251616,384-B11 ERASABLE PROGRAMM
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TMS2516, SMJ251616,384-BIT ERASABLE
Page 206 and 207:
m"'tJ::IJo~Cm
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Page 210 and 211:
TMS253232,768-BIT ERASABLE PROGRAMM
Page 212 and 213:
SMJ253232,768-BIT ERASABLE PROGRAMM
Page 214 and 215:
Page 216 and 217:
.m"'C:ao~cCDc::n'CDen6-20
Page 218 and 219:
1MS2564, SMJ256465,536·B11 ERASABL
Page 220 and 221:
1MS2564.65,536-BI1 ERASABLE PROGRAM
Page 222 and 223:
SMJ256465,536-BI1 ERASABLE PROGRAMM
Page 224 and 225:
Page 226 and 227:
m"'tJl:Jos:cCD
Page 228 and 229:
TMS2708. TMS27L08SMJ2708. SMJ27L081
Page 230 and 231:
TMS2708. TMS27L081024·WORD BY 8·B
Page 232 and 233:
SMJ2708, SMJ27L081024-WORD BY 8-BIT
Page 234 and 235:
TMS2708. TMS27L08SMJ2708. SMJ27L081
Page 236 and 237:
IIm"'C:XJo~c(I)
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TMS27162048·WORD BY 8·BIT ERASABL
Page 240 and 241:
TMS27162048·WORD BY 8·BIT ERASABL
Page 242 and 243:
6-46
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TMS2732A ,32,768-BIT ERASABLE PROGR
Page 246 and 247:
TMS2732A32,768·BITERASABLE PROGRAM
Page 248 and 249:
TMS2732A32,768-BIT ERASABLE PROGRAM
Page 250 and 251:
1MS276465,536-B11 ERASABLE PROGRAMM
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. TMS276465,536·BIT ERASABLE PROGR
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TMS276465,536-BI1 ERASABLE PROGRAMM
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TMS276465,536·BIT ERASABLE PROGRAM
Page 258 and 259:
1MS27128131,072·811 ERASABLE PROGR
Page 260 and 261:
TMS27128131,072·BIT ERASABLE PROGR
Page 262 and 263:
TMS27128131,072·BIT ERASABLE PROGR
Page 264 and 265:
m"'tJ:Do~cCD
Page 266 and 267:
ATTENTION:JJo3:cCD
Page 268 and 269:
TMS46648192·WORD BY 8·BIT READ·O
Page 270 and 271:
Page 272 and 273:
::co3:cCD
Page 274 and 275:
TMS473240aS-WORD BY 8-BIT READ-ONLY
Page 276 and 277:
·TMS47324096-WORD BY 8-BiT READ-ON
Page 278 and 279:
TMS47324096·WORD BY B·BIT READ·O
Page 280 and 281:
Page 282 and 283:
Page 284 and 285:
Page 286 and 287:
Page 288 and 289:
Page 290 and 291:
Page 292 and 293:
:::0o3:cCD
Page 294 and 295:
TMS4712816,384-WORD BY 8-BIT READ-O
Page 296 and 297:
Page 298 and 299:
Page 300 and 301:
Page 302 and 303:
TMS4712816,384·WORD BY 8·BIT READ
Page 304 and 305:
Page 306 and 307:
Page 308 and 309:
Page 310 and 311:
Page 312 and 313:
TMS4725632,76B-WORD BY B-BIT READ-O
Page 314 and 315:
ATTENTIONThese devices contain circ
Page 316 and 317:
TMS2114, TMS2114L1024·WORD 8Y 4·8
Page 318 and 319:
TMS2114, TMS2114L1024-WORD BY 4-BIT
Page 320 and 321:
TMS2114, TMS2114L1024-WORD BY 4-81T
Page 322 and 323:
TMS2150CACHE ADDRESS COMPARATORfunc
Page 324 and 325:
TMS2150CACHE ADDRESS COMPARATORswit
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TMS2150CACHE ADDRESS COMPARATORwrit
Page 328 and 329:
TMS40162048·WORD BY 8·BIT STATIC
Page 330 and 331:
TMS40162048-WORD BY 8-BIT STATIC RA
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TMS40162048·WORD BY 8·BIT STATIC
Page 334 and 335:
TMS4044, TMS40L444096·WDRD BY 1·B
Page 336 and 337:
TMS4044, TMS40L444096·WORDBY '·BI
Page 338 and 339:
TMS4044, TMS40L444096·WORD BY '·B
Page 340 and 341:
SMJ55172048·WDRD BY 8·BIT STATIC
Page 342 and 343:
SMJ55172048·WORD BY 8·BIT STATIC
Page 344 and 345:
SMJ55172048·WORD BY 8·BIT STATIC
Page 346 and 347:
SMJ55172048·WDRD BY 8·BIT STATIC
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...D)...fA(i'::ul>3:D):::lC.3:CD3o-
Page 351 and 352:
Applications Brief64K DYNAMIC RAM R
Page 353 and 354:
Applications Brief.256-CYCLE REFRES
Page 355 and 356:
EXPANSION OF 3242A FOR 256-CYCLE RE
Page 357 and 358:
Applications BriefTMS4164A AND TMS4
Page 359 and 360:
TESTER LIMITATIONS WITH PROGRAMMED
Page 361 and 362:
Applications BriefTMS4164 AND TMS44
Page 363 and 364:
W(4)(1)GCASRAS(16)(5)(10)A7(6)A6(7)
Page 365 and 366:
INTRODUCTION TO SURFACE MOUNT TECHN
Page 367 and 368:
NO.OFTERMINALS2028445268AMIN9,70(0.
Page 369 and 370:
Area Savings with PLCCThe pe board
Page 371 and 372:
Solder Paste ApplicationSolder past
Page 373 and 374:
CleanupFollowing the soldering proc
Page 375 and 376:
Applications BriefTTL DRIVERS FOR T
Page 377 and 378:
~MREO '9~B';;:I AD''-'~'~AD9: ,: ,5
Page 379 and 380:
Tables 2 and 3 list the data for th
Page 381 and 382:
TMS4416/7220 GRAPIDCSAs the increas
Page 383 and 384:
allows the use of multiple rows of
Page 385 and 386:
The video output circuitry closely
Page 387 and 388:
To illustrate the drawing speed of
Page 389 and 390:
Applications BriefTMS4416/TMS4500A
Page 391 and 392:
TMS4500A BLOCKS 1 AND 2 BLOCKS 3 AN
Page 393 and 394:
+5 VVCC16RAI1720RA22333RA326MA7 32R
Page 395 and 396:
TMS4500AALE AND ACX TIMINGThis appl
Page 397 and 398:
ALEACXRASMAO-MA7CASFIGURE 3 -ACX PR
Page 399 and 400:
Figures 6 and 7 show how the edge t
Page 401 and 402:
Applications BriefTMS4500A DRAM CON
Page 403 and 404:
CLOCKACCESS REFRESH I ACCESS GRANT
Page 405 and 406:
~. ______________________ACCESS REF
Page 407 and 408:
1. Refresh TimeTABLE 1 -STRAP CONFI
Page 409 and 410:
thust p('S373)tp('S189)tRAV-MAVtsu(
Page 411 and 412:
4. Row Address Setup and Hold Times
Page 413 and 414:
Applications BriefTMS4500A/8088 INT
Page 415 and 416:
WRITE 1::3 REFRESH t ACCESS GRANT R
Page 417 and 418:
TAVAlAddress valid t~ ALE low (TClC
Page 419 and 420:
Applications BriefTMS4500A/MC68000
Page 421 and 422:
ClKAlE,ACR,--UDS,lDSt-WRITEIREFRESH
Page 423 and 424:
ClKWRITE REFRESH _I_ ACCESS GRANT .
Page 425 and 426:
2. Memory precharge timeThe memory
Page 427 and 428:
thus tCAC = [2.5(166) - 140 - 15 -
Page 429 and 430:
thus, to = [1/2(50) + 2 - 1] ns= 26
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TABLE 3 -MICROPROCESSOR TO MEMORY C
Page 433 and 434:
C. AVERAGE INSTRUCTION CYCLE TIME*M
Page 435 and 436:
AN INTRODUCTION TO CACHE MEMORY SYS
Page 437 and 438:
I~ ________________________________
Page 439 and 440:
Since the label in this example is
Page 441 and 442:
A dual cache structure (K = 2) is s
Page 443 and 444:
HIGH DENSITY ROMSIN CONSUMER GAME S
Page 445:
Alphanumeric Index, Table of Conten
Page 448 and 449:
LOGIC SYMBOLSSince the boxes associ
Page 450 and 451:
LOGIC SYMBOLS5. EXPLANATION OF A TY
Page 452 and 453:
oCQ(;'rn-
Page 454 and 455:
•
Page 456 and 457:
MECHANICAL DATAAll measurements are
Page 458 and 459:
MECHANICAL DATAceramic packages ---
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MECHANICAL DATAceramic chip carrier
Page 462 and 463:
MECHANICAL DATAplastic chip carrier
Page 464 and 465:
Texas InstrumentsSemiconductor Tech
Page 466:
TI WorldwideSales Offices~~~~~m:: r
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