1 - Al Kossow's Bitsavers

MOSLSITMS4164, SMJ416465,536-8IT DYNAMIC RANDOM-ACCESS MEMORYJULY 1980 - REVISED OCTOBER 1983• 65,536 X 1 Organization• Single +5-V Supply (10% Tolerance)• JEDEC Standardized Pin-Out in Dual-In-LinePackages• Upward Pin Compatible with TMS4116(16K Dynamic .RAM)• First Military Version of 64K DRAM• Available Temperature Ranges:M . . . - 55°C to 125°CS ... - 55°C to 100°CE ... -40°C to 85°CL ... OOC to 70°C• Long Refresh Period . . . 4 milliseconds• Low Refresh Overhead Time . . . As Low As1.8% of Total Refresh Period• All Inputs, Outputs, Clocks Fully TTLCompatible• 3-State Unlatched Output• Common I/O Capability with "Early Write"Feature• Page-Mode Operation for Faster Access• Low Power DissipationOperating ... 125 mW (TVP)Standby ... 17.5 mW (TVP)• Performance Ranges (S, E, L TemperatureRanges):ACCESS ACCESSTIME TIMEROW COLUMNADDRESS ADDRESS(MAX) (MAX)'4164-12 120 ns 70 ns'4164-15 150 ns 85 ns'4164-20 200 ns 135 ns• New SMOS (Scaled-MOS) N-ChannelTechnologydescriptionREADORWRITECYCLE(MIN)230 ns260 ns326 nsThe '4164 is a high-speed, 65,536-bit, dynamicrandom-access memory, organized as 65,536 wordsof one bit each. It employs state-of-the-art SMOS(scaled MOS) N-channel double-level polysilicon gatetechnology for very high performance combined withlow cost and improved reliability.TMS4164 ••• FPL PACKAGE(TOP VIEW)c Zu m mlm u(TOP VIEW)NC [1 V16 VSSD 2 15 CASW 3 14 QRAS 4 13 A6AO 12 A3A2 11 A4A1 10 A5VDD 9 A7SMJ4164 •.• FG PACKAGE(TOP VIEW)2 1 1817 2 1 1817IN 3 0 16 Q IN 3 A 16 QRAS 4NC 5AO 6A2 7READ-MODIFY-WRITECYCLE(MIN)260 ns285 ns345 ns8 91011C I"- ll'l< C C:4ADVANCE INFORMATIONMILITARY PRODUCTS (SMJ) ONLYThis document contains information on a new product.Specifications are subject to change without notice.TEXASINSTRUMENTSPOST OFFICE BOX 225012 • DALLAS, TEXAS 75265Copyright © 1983 by Texas Instruments Incorporated4-39