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TMS416165,536-8IT MULTIPORT MEMORYwrite cycle timingc-
TMS416165,536·811 MULTIPORT MEMORYread-write/read-modify-write cycle timing,I.114·-----------tcrdWI----------~·1I 14 I-------- t WIRLI---------"1;-AO-A7l'RiilEDo.. ~t .:....I"'------tCLRH----~tl._twIRHI~1 L.-- tRLCL -----..I r I---..{IthlR<strong>Al</strong>11LI:. ! tRLCH------~t:.. 1 ~tCHRL---+I1 1----twlcLI---~_iII ~ III ~r-:-tsulRAI11'-----------......._I' 11 1 I----:--thlRLC<strong>Al</strong> .., tt --I t---I· .. I I .. ~---:-----tcLoEH-~I~II~I I I --.a '7tsUICAI I ~ Il~~ruI...._--twlcHI--~.. 1I I- -I 1 1I \\\f\\\\~ 'wIDE) l1;Z;.,......,...-r--rj---r-I , I II tsulrdl-:--1 ~tsuIWCHI~ II I, I~ tsuIWRHI~ I.. thlRLWI I -f 1I I I' I1'. II thlCLWI ·1 11 rtcLWL--.f I . I I I:: OC~~~c&oot! )[;-.wIM1X-X~X....,.)~~,r--J'·{~~4T"'""J1~Cr-"Jf'I. tRLWL "I I I I I• thIRLDI' . .1 I I: t---thlcLDI I II .1 1 1I I --..f~tsuIDI .1 I I:.: OOOOO&N10d00CI I thlWLDI I" ", I --I j-- tdislOEI1 I ~ j4-talOEi I· i tdislCHIVOHr-- tcoE ~II ; ~ VA"D p>-----I,-,--talCI• talRI -IIfAQ)Co)·SQ)c...>oEQ):liE""C&:CO:liEoCta:Co)'ECO&:>CTEXASINSTRUMENTSPOST OFFICE BOX 225012 • DALLAS, TEXAS 752654-27
Page 1:
SMYOOO2.,MOS MemoryData Book1984II
Page 9 and 10:
ALPHANUMERIC INDEX TO DATA SHEETSSM
Page 11 and 12:
TABLE OF CONTENTSALPHANUMERIC INDEX
Page 13 and 14:
MOSLSIRAMs, ROMs, EPROMsSELECTION G
Page 15 and 16: If you want to give it a try for yo
Page 17 and 18: INTERCHANGEABILITY GUIDEPART 1 -ALT
Page 19 and 20: INTERCHANGEABILITY GUIDEFUJITSUMB 8
Page 21 and 22: INTERCHANGEABILITY GUIDEMOTOROLAMCM
Page 23 and 24: INTERCHANGEABILITY GUIDETOSHIBATMM
Page 25 and 26: INTERCHANGEABILITY GUIDESTATIC RAMS
Page 27 and 28: Alphanumeric Index, Table of Conten
Page 29 and 30: GLOSSARY fTIMING CONVENTIONS/DATA S
Page 31 and 32: GLOSSARY/TIMING CONVENTIONS/DATA SH
Page 33 and 34: GLOSSARY!TIMING CONVENTIONS/DATA SH
Page 39 and 40: Alphanumeric Index, Table of Conten
Page 41 and 42: MOSLSITMS411616,384-811 DYNAMIC RAN
Page 43 and 44: TMS411616,384·811 DYNAMIC RANDOM·
Page 45 and 46: 1MS411616,384-811 DYNAMIC RANDOM-AC
Page 47 and 48: TMS411616.384·81T DYNAMIC RANDOM·
Page 51 and 52: zIiADDRESSES~!.....RASCASwDO"*. i,*
Page 53 and 54: TMS411616,384-81T DYNAMIC RANDOM-AC
Page 55 and 56: MOSLSITMS416165,536-81T MULTIPORT M
Page 57 and 58: TMS416165,536-811 MULTIPORT MEMORYf
Page 59 and 60: TMS416165,536-BIT MULTIPORT MEMORYs
Page 61 and 62: TMS416165,536-0IT MULTIPORT MEMORYc
Page 63 and 64: TMS416165,536·BIT MUL TIPORT MEMOR
Page 65: TMS416165,536 o BIT MUL TIPORT MEMO
Page 69 and 70: zI[~~~co,.. twiRL) _,RAS:::~ SI l L
Page 71 and 72: TMS416165,536·BIT MULTIPORT MEMORY
Page 73 and 74: ~ ___TMS416165.536-BIT MUL TIPORT M
Page 75 and 76: 0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
Page 77 and 78: TMS416165,536-8IT MULTIPORT MEMORY1
Page 79 and 80: MOSLSITMS4164, SMJ416465,536-8IT DY
Page 81 and 82: TMS4164, SMJ416465,536-811. DYNAMIC
Page 83 and 84: TMS416465,536-811 DYNAMIC RANDOM-AC
Page 87 and 88: TMS416465,536-811 DYNAMIC RANDOM-AC
Page 89 and 90: SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 91 and 92: SMJ416465,536-81T DYNAMIC RANDOM-AC
Page 93 and 94: SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 95 and 96: TMS4164, SMJ416465,536·81T DYNAMIC
Page 97 and 98: TMS4164, SMJ416465,536·8IT DYNAMIC
Page 99 and 100: z~~gz~.J:>.c1J
Page 101 and 102: Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
Page 103 and 104: MOSLSITMS4256. TMS4257262.144·8IT
Page 105 and 106: TMS4256, TMS4257262,144·8IT DYNAMI
Page 107 and 108: TMS4256, TMS4257262,144-8IT DYNAMIC
Page 111 and 112: TMS4257262.144·8IT DYNAMIC RANDOM
Page 113 and 114: TMS4256, TMS4257262,144·BIT DYNAMI
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TMS4257262,144·81T DYNAMIC RANDOM
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Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
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i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
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TMS4256, TMS4257262,144·8IT DYNAMI
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MOSLSITMS4416. SMJ441616.384·WORD
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TMS4416, SMJ441616,384·WORD BY 4·
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TMS441616,384-WORD BY 4-BI1 DYNAMIC
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TMS441616,384-WORD BY 4-BIT DYNAMIC
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SMJ441616,384·WORD BY 4·BIT DYNAM
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SMJ441616,384-WORD BY 4-B11 DYNAMIC
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1MS4416, SMJ441616,384·WORD BY 4·
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TMS4416, SMJ441616,384·WORD BY 4·
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z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
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1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
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MOSLSITMS446465,536-WORD BY 4-BIT D
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TMS446465,536-WORD 8Y 4-81T DYNAMIC
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TMS446465,536·WORD BY 4·BIT DYNAM
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1MS446465,536·WORD BY 4·B11 DYNAM
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TMS446465,536·WORD BY 4·BIT DYNAM
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RASCAS----{! '.,ReIVIH i~VIL I tRLC
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~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
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~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
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MEMORY SUPPORTLSITMS4500ADYNAMIC RA
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TMS4500ADYNAMIC RAM CONTROLLERpin d
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TMS4500ADYNAMIC RAM CONTROLLERarbit
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERacces
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TMS4500ADYNAMIC RAM CONTROLLERoutpu
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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Alphanumeric Index, Table of Conten
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•••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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MOSLSITMS2516. SMJ251616.384-BIT ER
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TMS2516, SMJ251616,384-BIT ERASABLE
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TMS251616,384·BIT ERASABLE PROGRAM
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SMJ251616,384-BIT ERASABLE PROGRAMM
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o 441MS2516, SMJ251616,384·B11 ERA
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MOSLSITMS2532, SMJ253232,768·BIT E
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Page 211 and 212:
TMS253232,768-BI1 ERASABLE PROGRAMM
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Page 215 and 216:
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MOSLSITMS2564, SMJ256465,536-BIT ER
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TMS256465,536-BIT ERASABLE PROGRAMM
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TMS2564 r SMJ256465 r536-BIT ERASAB
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MOSLSITMS2708, TMS27L08, SMJ2708, S
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TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
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TMS2708. TMS27L081024·WORD BY 8·B
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SMJ2708, SMJ27L081024·WORD BY 8·B
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TMS2708, TMS27L08SMJ2708, SMJ27L081
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MOSLSITMS27162048·WORD BY 8·BIT E
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TMS27162048·WORD BY 8·BIT ERASABL
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TMS27162048-WORD BY 8-BIT ERASABLEP
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TMS2732A32,76B-BIT ERASABLE PROGRAM
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TMS2732A32,768-BIT ERASABLE PROGRAM
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TMS2732A32,768·BIT ERASABLE PROGRA
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MOSLSITMS276465,536-BI1 ERASABLE PR
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TMS276465,536·BIT ERASABLE PROGRAM
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Page 255 and 256:
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MOSLSITMS27128131,072·BIT ERASABLE
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TMS27128131,072·BI1 ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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Page 267 and 268:
MOSLSITMS46648192·WORD BY 8·BIT R
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TMS46648192·WORD BY 8·BIT READ·O
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Page 273 and 274:
MOSLSITMS47324096~WORD BY B·BIT RE
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Page 277 and 278:
Page 279 and 280:
MOSLSITMS47648192·WORD BY 8·BIT R
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Page 283 and 284:
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MOSLSI, TMS49648192·WORD BY 8·BIT
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MOSLSITMS4712816,384·WORD BY 8·BI
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TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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Page 301 and 302:
Page 303 and 304:
MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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Page 309 and 310:
Page 311 and 312:
Page 313 and 314:
Page 315 and 316:
MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
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CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
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UO!leWJOJUI SUOlle:ludd"com~'~,i'74
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coen(J)CLOCKWRITEREADROYALEA14-A5MS
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. Access Grant CyclesThe precharge
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whereta(C)tp(BFR)(-103 + tc2 - tp(B
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•9-62
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tt(REH)TCHLLtAEL-RELRAS rise time (
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. Refresh CyclesOn refresh cycles t
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wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
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R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
Page 463 and 464:
Texas InstrumentsSemiconductor Tech
Page 465 and 466:
TI Sales Offices TI DistributorsALA
Page 468:
Printed in U.S.A.•TEXASINSTRUMENT
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