1 - Al Kossow's Bitsavers

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<strong>Al</strong>phanumeric Index, Table of Contents, Selection GuideInterchangeability GuideGlossary/Timing Conventions/Data Sheet StructureDynamic RAM and Memory Support DevicesDynamic RAM ModulesEPROM DevicesROM Devices ..Static RAM and Memory Support DevicesApplications Information ..Logic· SymbolsMechanical Data
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
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TMS416165,536-811 MULTIPORT MEMORYf
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TMS416165,536-BIT MULTIPORT MEMORYs
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TMS416165,536-0IT MULTIPORT MEMORYc
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TMS416165,536·BIT MUL TIPORT MEMOR
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TMS416165,536 o BIT MUL TIPORT MEMO
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TMS416165,536·811 MULTIPORT MEMORY
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zI[~~~co,.. twiRL) _,RAS:::~ SI l L
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TMS416165,536·BIT MULTIPORT MEMORY
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~ ___TMS416165.536-BIT MUL TIPORT M
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0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
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TMS416165,536-8IT MULTIPORT MEMORY1
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MOSLSITMS4164, SMJ416465,536-8IT DY
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TMS4164, SMJ416465,536-811. DYNAMIC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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SMJ416465,536-81T DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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TMS4164, SMJ416465,536·81T DYNAMIC
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TMS4164, SMJ416465,536·8IT DYNAMIC
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z~~gz~.J:>.c1J
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Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
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MOSLSITMS4256. TMS4257262.144·8IT
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TMS4256, TMS4257262,144·8IT DYNAMI
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TMS4256, TMS4257262,144-8IT DYNAMIC
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TMS4257262.144·8IT DYNAMIC RANDOM
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TMS4256, TMS4257262,144·BIT DYNAMI
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TMS4257262,144·81T DYNAMIC RANDOM
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Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
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i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
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MOSLSITMS4416. SMJ441616.384·WORD
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TMS4416, SMJ441616,384·WORD BY 4·
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TMS441616,384-WORD BY 4-BI1 DYNAMIC
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TMS441616,384-WORD BY 4-BIT DYNAMIC
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SMJ441616,384·WORD BY 4·BIT DYNAM
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SMJ441616,384-WORD BY 4-B11 DYNAMIC
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1MS4416, SMJ441616,384·WORD BY 4·
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TMS4416, SMJ441616,384·WORD BY 4·
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z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
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1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
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MOSLSITMS446465,536-WORD BY 4-BIT D
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TMS446465,536-WORD 8Y 4-81T DYNAMIC
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TMS446465,536·WORD BY 4·BIT DYNAM
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1MS446465,536·WORD BY 4·B11 DYNAM
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TMS446465,536·WORD BY 4·BIT DYNAM
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RASCAS----{! '.,ReIVIH i~VIL I tRLC
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~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
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~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
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MEMORY SUPPORTLSITMS4500ADYNAMIC RA
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TMS4500ADYNAMIC RAM CONTROLLERpin d
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TMS4500ADYNAMIC RAM CONTROLLERarbit
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERacces
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TMS4500ADYNAMIC RAM CONTROLLERoutpu
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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•••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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MOSLSITMS2516. SMJ251616.384-BIT ER
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TMS2516, SMJ251616,384-BIT ERASABLE
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TMS251616,384·BIT ERASABLE PROGRAM
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SMJ251616,384-BIT ERASABLE PROGRAMM
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o 441MS2516, SMJ251616,384·B11 ERA
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MOSLSITMS2532, SMJ253232,768·BIT E
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TMS253232,768-BI1 ERASABLE PROGRAMM
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MOSLSITMS2564, SMJ256465,536-BIT ER
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TMS256465,536-BIT ERASABLE PROGRAMM
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TMS2564 r SMJ256465 r536-BIT ERASAB
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MOSLSITMS2708, TMS27L08, SMJ2708, S
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TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
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TMS2708. TMS27L081024·WORD BY 8·B
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SMJ2708, SMJ27L081024·WORD BY 8·B
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TMS2708, TMS27L08SMJ2708, SMJ27L081
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MOSLSITMS27162048·WORD BY 8·BIT E
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TMS27162048·WORD BY 8·BIT ERASABL
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TMS27162048-WORD BY 8-BIT ERASABLEP
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TMS2732A32,76B-BIT ERASABLE PROGRAM
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TMS2732A32,768-BIT ERASABLE PROGRAM
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TMS2732A32,768·BIT ERASABLE PROGRA
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MOSLSITMS276465,536-BI1 ERASABLE PR
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TMS276465,536·BIT ERASABLE PROGRAM
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MOSLSITMS27128131,072·BIT ERASABLE
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TMS27128131,072·BI1 ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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MOSLSITMS46648192·WORD BY 8·BIT R
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TMS46648192·WORD BY 8·BIT READ·O
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MOSLSITMS47324096~WORD BY B·BIT RE
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MOSLSITMS47648192·WORD BY 8·BIT R
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MOSLSI, TMS49648192·WORD BY 8·BIT
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MOSLSITMS4712816,384·WORD BY 8·BI
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TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
Page 402 and 403: CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
Page 404 and 405: UO!leWJOJUI SUOlle:ludd"com~'~,i'74
Page 406 and 407: coen(J)CLOCKWRITEREADROYALEA14-A5MS
Page 408 and 409: . Access Grant CyclesThe precharge
Page 410 and 411: whereta(C)tp(BFR)(-103 + tc2 - tp(B
Page 412 and 413: •9-62
Page 414 and 415: tt(REH)TCHLLtAEL-RELRAS rise time (
Page 416 and 417: . Refresh CyclesOn refresh cycles t
Page 418 and 419: wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
Page 420 and 421: R/W approach does a normal read-mod
Page 422 and 423: II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
Page 424 and 425: ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
Page 426 and 427: 4. Row address setup and hold timeT
Page 428 and 429: CLKrWRITE -------I.~ ..~---REFRESH-
Page 430 and 431: The read access time on access gran
Page 432 and 433: implementations in order to relieve
Page 434 and 435: "C'2..c:rm...o·j(I)....5'o3...mo·
Page 436 and 437: RELATIVE MEMORY SIZEARCHIVAL STORAG
Page 438 and 439: increments till satisfied. This pro
Page 440 and 441: In the example shown in Figure 5, t
Page 442 and 443: »'C"E..crQ)r+0':::Jtil:;-....o...3
Page 444 and 445: •9-94
Page 447 and 448: 184LOGIC SYMBOLS1. INTRODUCTIONEXPl
Page 449 and 450: LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
Page 451: lOGIC SYMBOLSWhen RAS goes low, it
Page 455 and 456: MECHANICAL DATAgeneralElectrical ch
Page 457 and 458: MECHANICAL DATAceramic packages -ce
Page 459 and 460: MECHANICAL DATAplastic packages (N
Page 461 and 462: MECHANICAL DATAceramic chip carrier
Page 463 and 464: Texas InstrumentsSemiconductor Tech
Page 465 and 466: TI Sales Offices TI DistributorsALA
Page 468: Printed in U.S.A.•TEXASINSTRUMENT
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