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fiSECONDARYVAPOR(VAPOR BLANKET)..Figure 6. Vapor Phase Reflow System with Secondary Vapor Blanket•IPRODUCTSYSTEM INLETJVAPOR ZONElJSYSTEM OUTLET. VAPOR CONDENSINGCOILVAPORCONVEYOR CONDENSING PRODUCTL:~~ Ji -L-~-~~~";~~:;~:~i.A~~~.~~' _~~~~~_C_E_~ _~(:~:OADVENTILATIONSATURATED VAPORVENTILATIONIMMERSION HEATING ELEMENTSBOILING FLUOROINERTELECTRONIC FLUIDFigure 7. In-line Single Vapor Heating System Schematic9-22
CleanupFollowing the soldering process, it is necessary to removethe flux residues. These residues can be removed by traditionalcleanup methods if the components have approximately5 mils clearance to the PC board. One benefit of the PLCCwith its J-leads is that it provides approximately 29 mils ofclearance. Special soaking, agitation, or other methods willbe necessary to provide adequate cleanup for componentswith less that 5 mils of clearance.CONCLUSIONA brief overview of surface-mount technology has beengiven showing its advantages over standard plated-throughholetechnology. Surface mounting is a cost-effective, sensiblesolution to the ever increasing demand for denser circuitboards. Detailed information about surface mounting isavailable from most major component and equipmentmanufacturers and through numerous technical articles onthe subject. As the electronics industry strives to implementmore functions in a given area, Texas Instruments believessurface mounting will become the predominant mountingtechnology of the future.MOS MemoryApplications Engineeringco"';:;«SE ...-E.5tnCo".;:i«S"~Q.c.~9-23
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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Page 51 and 52:
zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
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TMS416165,536-811 MULTIPORT MEMORYf
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TMS416165,536-BIT MULTIPORT MEMORYs
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TMS416165,536-0IT MULTIPORT MEMORYc
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TMS416165,536·BIT MUL TIPORT MEMOR
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TMS416165,536 o BIT MUL TIPORT MEMO
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TMS416165,536·811 MULTIPORT MEMORY
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zI[~~~co,.. twiRL) _,RAS:::~ SI l L
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TMS416165,536·BIT MULTIPORT MEMORY
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~ ___TMS416165.536-BIT MUL TIPORT M
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0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
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TMS416165,536-8IT MULTIPORT MEMORY1
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MOSLSITMS4164, SMJ416465,536-8IT DY
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TMS4164, SMJ416465,536-811. DYNAMIC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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SMJ416465,536-81T DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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TMS4164, SMJ416465,536·81T DYNAMIC
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TMS4164, SMJ416465,536·8IT DYNAMIC
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z~~gz~.J:>.c1J
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Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
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MOSLSITMS4256. TMS4257262.144·8IT
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TMS4256, TMS4257262,144·8IT DYNAMI
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TMS4256, TMS4257262,144-8IT DYNAMIC
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TMS4257262.144·8IT DYNAMIC RANDOM
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TMS4256, TMS4257262,144·BIT DYNAMI
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TMS4257262,144·81T DYNAMIC RANDOM
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Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
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i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
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Page 125 and 126:
MOSLSITMS4416. SMJ441616.384·WORD
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TMS4416, SMJ441616,384·WORD BY 4·
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TMS441616,384-WORD BY 4-BI1 DYNAMIC
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TMS441616,384-WORD BY 4-BIT DYNAMIC
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SMJ441616,384·WORD BY 4·BIT DYNAM
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SMJ441616,384-WORD BY 4-B11 DYNAMIC
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1MS4416, SMJ441616,384·WORD BY 4·
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TMS4416, SMJ441616,384·WORD BY 4·
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z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
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1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
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MOSLSITMS446465,536-WORD BY 4-BIT D
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TMS446465,536-WORD 8Y 4-81T DYNAMIC
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TMS446465,536·WORD BY 4·BIT DYNAM
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1MS446465,536·WORD BY 4·B11 DYNAM
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TMS446465,536·WORD BY 4·BIT DYNAM
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RASCAS----{! '.,ReIVIH i~VIL I tRLC
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~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
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~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
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MEMORY SUPPORTLSITMS4500ADYNAMIC RA
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TMS4500ADYNAMIC RAM CONTROLLERpin d
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TMS4500ADYNAMIC RAM CONTROLLERarbit
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERacces
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TMS4500ADYNAMIC RAM CONTROLLERoutpu
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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•••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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MOSLSITMS2516. SMJ251616.384-BIT ER
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TMS2516, SMJ251616,384-BIT ERASABLE
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TMS251616,384·BIT ERASABLE PROGRAM
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SMJ251616,384-BIT ERASABLE PROGRAMM
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o 441MS2516, SMJ251616,384·B11 ERA
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MOSLSITMS2532, SMJ253232,768·BIT E
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TMS253232,768-BI1 ERASABLE PROGRAMM
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MOSLSITMS2564, SMJ256465,536-BIT ER
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TMS256465,536-BIT ERASABLE PROGRAMM
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TMS2564 r SMJ256465 r536-BIT ERASAB
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MOSLSITMS2708, TMS27L08, SMJ2708, S
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TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
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TMS2708. TMS27L081024·WORD BY 8·B
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SMJ2708, SMJ27L081024·WORD BY 8·B
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TMS2708, TMS27L08SMJ2708, SMJ27L081
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MOSLSITMS27162048·WORD BY 8·BIT E
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TMS27162048·WORD BY 8·BIT ERASABL
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TMS27162048-WORD BY 8-BIT ERASABLEP
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TMS2732A32,76B-BIT ERASABLE PROGRAM
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TMS2732A32,768-BIT ERASABLE PROGRAM
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TMS2732A32,768·BIT ERASABLE PROGRA
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MOSLSITMS276465,536-BI1 ERASABLE PR
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TMS276465,536·BIT ERASABLE PROGRAM
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MOSLSITMS27128131,072·BIT ERASABLE
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TMS27128131,072·BI1 ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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MOSLSITMS46648192·WORD BY 8·BIT R
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TMS46648192·WORD BY 8·BIT READ·O
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MOSLSITMS47324096~WORD BY B·BIT RE
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MOSLSITMS47648192·WORD BY 8·BIT R
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MOSLSI, TMS49648192·WORD BY 8·BIT
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MOSLSITMS4712816,384·WORD BY 8·BI
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TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
Page 321 and 322: ADVANCED MEMORYDEVELOPMENT•Fast A
Page 323 and 324: TMS2150CACHE ADDRESS COMPARATORabso
Page 325 and 326: TMS2150CACHE ADDRESS COMPARATORPARA
Page 327 and 328: MOSLSITMS40162048·WORD BY 8·BIT S
Page 329 and 330: TMS4016204H-WORD BY H-BIT STATIC RA
Page 331 and 332: TMS40162048-WDRD BY 8-BIT STATIC RA
Page 333 and 334: MOSLSITMS4044, TMS40L444096-WORD BY
Page 335 and 336: TMS4044, TMS40L444096·WORD BY 1·B
Page 337 and 338: TMS4044, TMS40L444096·WORD BY l·B
Page 339 and 340: MILITARYCMOSLSISMJ55172048-WORD BY
Page 341 and 342: SMJ5517204a·WORD BY a·BIT STATIC
Page 343 and 344: SMJ55172048·WORD BY 8·BIT STATIC
Page 345 and 346: SMJ55172048-WDRD BY 8-BIT STATIC RA
Page 347 and 348: SMJ5517204B·WORD BY B·BIT STATIC
Page 349: Alphanumeric Index, Table of Conten
Page 352 and 353: However, the TMS 4164 provides the
Page 354 and 355: EXPANSION OF 3242 FOR 256-CYCLE REF
Page 356 and 357: •9-6
Page 358 and 359: PAD OPENINGIN OVERCOATPADMETALPADME
Page 360 and 361: Figure 5 shows how the driver outpu
Page 362 and 363: cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
Page 364 and 365: The falling edge of RAS causes R 1
Page 366 and 367: ~--------::~~:~:~~~:--------~~7,34(
Page 368 and 369: J-Lead AdvantageTexas Instruments P
Page 370 and 371: Surface Mount Component Availabilit
Page 374 and 375: l>'C'2.ri'Q),..o·:::Jen5'....... o
Page 376 and 377: l>"C'2..(i"Dl...0":=(I)5"....o...3D
Page 378 and 379: An external refresh counter has bee
Page 380 and 381: l>'C'CC:)"Q).-+o·::::sen:ro ... ""
Page 382 and 383: uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
Page 384 and 385: DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
Page 386 and 387: B. If dynamic RAM refresh is enable
Page 388 and 389: •9-38
Page 390 and 391: The TMS4416/TMS4500A board is arran
Page 392 and 393: RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
Page 394 and 395: 9-44
Page 396 and 397: ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
Page 398 and 399: The ALE high to ClK low time is giv
Page 400 and 401: ClKALEACXRASMAO-MA7CASREFREQROY•
Page 402 and 403: CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
Page 404 and 405: UO!leWJOJUI SUOlle:ludd"com~'~,i'74
Page 406 and 407: coen(J)CLOCKWRITEREADROYALEA14-A5MS
Page 408 and 409: . Access Grant CyclesThe precharge
Page 410 and 411: whereta(C)tp(BFR)(-103 + tc2 - tp(B
Page 412 and 413: •9-62
Page 414 and 415: tt(REH)TCHLLtAEL-RELRAS rise time (
Page 416 and 417: . Refresh CyclesOn refresh cycles t
Page 418 and 419: wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
Page 420 and 421: R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
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Texas InstrumentsSemiconductor Tech
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TI Sales Offices TI DistributorsALA
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Printed in U.S.A.•TEXASINSTRUMENT
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