1 - Al Kossow's Bitsavers

More documents

Recommendations

Info

. TMS276465,536·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORYlogic· symbol t(10) EPROM 8192x8AO 0(9)Al(8)A2(11 )(7) A\l Q1A3(6) A\l 02A4(5) A\l 03A5(4)o A \l 04A6 A-(3) 8191 A \l 05A7(25)A\l 06A8(24)A\l 07A9(21)A\l 08Al0(23)All(2)A1212(20)[PWR OWN)EG&(22) ENm"'0:lIo3:cCD
TMS276465,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORYelectrical characteristics over full ranges of recommended operating conditionsIIIPARAMETER TEST CONDITIONS MIN Typt MAX UNITVOH High-level output voltage IOH = -400 p,A 2.4 VVOL Low-level output voltage IOL = 2.1 rnA 0.45 VII Input current (load) VI = 0 V to 5.25 V ±10 p,A10 Output current (leakage) Vo = 0.4 V to 5.25 V ±10 p,AIpPl Vpp supply current (read) Vpp = 5.25 V 5 rnAIpP2 Vpp supply current (program) i: and ~ at VIL 50 rnAICCl VCC supply current (standby) Eat VIH 35 rnAICC2 VCC supply current (active) E and G at VIL 100 rnAt Typical values are at T A = 25°C and nominal voltages.capacitance over recommended supply voltage range and operating free-air temperature range, f1 MHzPARAMETER TEST CONDITIONS MIN Typt MAX UNITCi Input capacitance VI = 0 V 4 6 pFCo Output capacitance Vo = 0 V 8 12 pFt Typical values are at T A = 25°C and nominal voltages.switching characteristics over recommended supply voltage range and operating free-air temperature range,CL = 100 pF, 1 Series 74 TTL load (see note 2 and figure 2)PARAMETERTMS2764-20 TMS2764-25 TMS2764-30 TMS2764-35 TMS2764-45MIN MAX MIN MAX MIN MAX MIN MAX MIN MAXtalA) Access time from address 200 250 300 350 450 nstalE) Access time frm E 200 250 300 350 450 nsten (G) Output enable time from G 75 100 120 150 150 nstdis(G)t Output disable time from G 0 60 0 85 0 105 0 130 0 130 nsOutput data valid time aftertv (A) change of address, E, or G, 0 0 0 0 0 nswhichever occurs firstNOTE 2:Fall all switching characteristics and timing measurements, input timing reference levels are 0.8 V and 2 V; output timing reference levels are 0.8 Vand 2 V.t Value calculated from 0.5 volt delta to measured output level; tdis(G) is specified from G or f. whichever occurs first. Refer to read cycle timing diagram.UNITf/)Q)(.)-s;Q)c~oa:Q.W184TEXASINSTRUMENTSPOST OFFICE BOX 225012 • OALLAS. TEXAS 752656-57
Page 1:
SMYOOO2.,MOS MemoryData Book1984II
Page 9 and 10:
ALPHANUMERIC INDEX TO DATA SHEETSSM
Page 11 and 12:
TABLE OF CONTENTSALPHANUMERIC INDEX
Page 13 and 14:
MOSLSIRAMs, ROMs, EPROMsSELECTION G
Page 15 and 16:
If you want to give it a try for yo
Page 17 and 18:
INTERCHANGEABILITY GUIDEPART 1 -ALT
Page 19 and 20:
INTERCHANGEABILITY GUIDEFUJITSUMB 8
Page 21 and 22:
INTERCHANGEABILITY GUIDEMOTOROLAMCM
Page 23 and 24:
INTERCHANGEABILITY GUIDETOSHIBATMM
Page 25 and 26:
INTERCHANGEABILITY GUIDESTATIC RAMS
Page 27 and 28:
Alphanumeric Index, Table of Conten
Page 29 and 30:
GLOSSARY fTIMING CONVENTIONS/DATA S
Page 31 and 32:
GLOSSARY/TIMING CONVENTIONS/DATA SH
Page 33 and 34:
GLOSSARY!TIMING CONVENTIONS/DATA SH
Page 35 and 36:
Page 37 and 38:
Page 39 and 40:
Page 41 and 42:
MOSLSITMS411616,384-811 DYNAMIC RAN
Page 43 and 44:
TMS411616,384·811 DYNAMIC RANDOM·
Page 45 and 46:
1MS411616,384-811 DYNAMIC RANDOM-AC
Page 47 and 48:
TMS411616.384·81T DYNAMIC RANDOM·
Page 49 and 50:
Page 51 and 52:
zIiADDRESSES~!.....RASCASwDO"*. i,*
Page 53 and 54:
TMS411616,384-81T DYNAMIC RANDOM-AC
Page 55 and 56:
MOSLSITMS416165,536-81T MULTIPORT M
Page 57 and 58:
TMS416165,536-811 MULTIPORT MEMORYf
Page 59 and 60:
TMS416165,536-BIT MULTIPORT MEMORYs
Page 61 and 62:
TMS416165,536-0IT MULTIPORT MEMORYc
Page 63 and 64:
TMS416165,536·BIT MUL TIPORT MEMOR
Page 65 and 66:
TMS416165,536 o BIT MUL TIPORT MEMO
Page 67 and 68:
TMS416165,536·811 MULTIPORT MEMORY
Page 69 and 70:
zI[~~~co,.. twiRL) _,RAS:::~ SI l L
Page 71 and 72:
TMS416165,536·BIT MULTIPORT MEMORY
Page 73 and 74:
~ ___TMS416165.536-BIT MUL TIPORT M
Page 75 and 76:
0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
Page 77 and 78:
TMS416165,536-8IT MULTIPORT MEMORY1
Page 79 and 80:
MOSLSITMS4164, SMJ416465,536-8IT DY
Page 81 and 82:
TMS4164, SMJ416465,536-811. DYNAMIC
Page 83 and 84:
TMS416465,536-811 DYNAMIC RANDOM-AC
Page 85 and 86:
Page 87 and 88:
TMS416465,536-811 DYNAMIC RANDOM-AC
Page 89 and 90:
SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 91 and 92:
SMJ416465,536-81T DYNAMIC RANDOM-AC
Page 93 and 94:
SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 95 and 96:
TMS4164, SMJ416465,536·81T DYNAMIC
Page 97 and 98:
TMS4164, SMJ416465,536·8IT DYNAMIC
Page 99 and 100:
z~~gz~.J:>.c1J
Page 101 and 102:
Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
Page 103 and 104:
MOSLSITMS4256. TMS4257262.144·8IT
Page 105 and 106:
TMS4256, TMS4257262,144·8IT DYNAMI
Page 107 and 108:
TMS4256, TMS4257262,144-8IT DYNAMIC
Page 109 and 110:
Page 111 and 112:
TMS4257262.144·8IT DYNAMIC RANDOM
Page 113 and 114:
TMS4256, TMS4257262,144·BIT DYNAMI
Page 115 and 116:
Page 117 and 118:
TMS4257262,144·81T DYNAMIC RANDOM
Page 119 and 120:
Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
Page 121 and 122:
i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
Page 123 and 124:
Page 125 and 126:
MOSLSITMS4416. SMJ441616.384·WORD
Page 127 and 128:
TMS4416, SMJ441616,384·WORD BY 4·
Page 129 and 130:
TMS441616,384-WORD BY 4-BI1 DYNAMIC
Page 131 and 132:
TMS441616,384-WORD BY 4-BIT DYNAMIC
Page 133 and 134:
Page 135 and 136:
SMJ441616,384·WORD BY 4·BIT DYNAM
Page 137 and 138:
SMJ441616,384-WORD BY 4-B11 DYNAMIC
Page 139 and 140:
1MS4416, SMJ441616,384·WORD BY 4·
Page 141 and 142:
TMS4416, SMJ441616,384·WORD BY 4·
Page 143 and 144:
z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
Page 145 and 146:
1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
Page 147 and 148:
MOSLSITMS446465,536-WORD BY 4-BIT D
Page 149 and 150:
TMS446465,536-WORD 8Y 4-81T DYNAMIC
Page 151 and 152:
TMS446465,536·WORD BY 4·BIT DYNAM
Page 153 and 154:
1MS446465,536·WORD BY 4·B11 DYNAM
Page 155 and 156:
TMS446465,536·WORD BY 4·BIT DYNAM
Page 157 and 158:
Page 159 and 160:
RASCAS----{! '.,ReIVIH i~VIL I tRLC
Page 161 and 162:
~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
Page 163 and 164:
~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
Page 165 and 166:
MEMORY SUPPORTLSITMS4500ADYNAMIC RA
Page 167 and 168:
TMS4500ADYNAMIC RAM CONTROLLERpin d
Page 169 and 170:
TMS4500ADYNAMIC RAM CONTROLLERarbit
Page 171 and 172:
TMS4500ADYNAMIC RAM CONTROLLERswitc
Page 173 and 174:
TMS4500ADYNAMIC RAM CONTROLLERacces
Page 175 and 176:
TMS4500ADYNAMIC RAM CONTROLLERoutpu
Page 177 and 178:
TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 179 and 180:
TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 181 and 182:
Page 183 and 184:
•••••MOSLSI65,536 X 4 Org
Page 185 and 186:
TM4164EC465,536 BY 4·BIT DYNAMIC R
Page 187 and 188:
MOSLSITM4164EL965,536 BY 9·BIT DYN
Page 189 and 190:
TM4164EL965,536 BY 9-BIT DYNAMIC RA
Page 191 and 192:
••••••••0MOSLSI65,5
Page 193 and 194:
TM4164FL865,536 BY 8·BIT DYNAMIC R
Page 195 and 196:
Page 197 and 198:
MOSLSITMS2516. SMJ251616.384-BIT ER
Page 199 and 200:
TMS2516, SMJ251616,384-BIT ERASABLE
Page 201 and 202: TMS251616,384·BIT ERASABLE PROGRAM
Page 203 and 204: SMJ251616,384-BIT ERASABLE PROGRAMM
Page 205 and 206: o 441MS2516, SMJ251616,384·B11 ERA
Page 207 and 208: MOSLSITMS2532, SMJ253232,768·BIT E
Page 209 and 210: TMS2532, SMJ253232,768-BIT ERASABLE
Page 211 and 212: TMS253232,768-BI1 ERASABLE PROGRAMM
Page 217 and 218: MOSLSITMS2564, SMJ256465,536-BIT ER
Page 221 and 222: TMS256465,536-BIT ERASABLE PROGRAMM
Page 225 and 226: TMS2564 r SMJ256465 r536-BIT ERASAB
Page 227 and 228: MOSLSITMS2708, TMS27L08, SMJ2708, S
Page 229 and 230: TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
Page 231 and 232: TMS2708. TMS27L081024·WORD BY 8·B
Page 233 and 234: SMJ2708, SMJ27L081024·WORD BY 8·B
Page 235 and 236: TMS2708, TMS27L08SMJ2708, SMJ27L081
Page 237 and 238: MOSLSITMS27162048·WORD BY 8·BIT E
Page 239 and 240: TMS27162048·WORD BY 8·BIT ERASABL
Page 241 and 242: TMS27162048-WORD BY 8-BIT ERASABLEP
Page 243 and 244: TMS2732A32,76B-BIT ERASABLE PROGRAM
Page 245 and 246: TMS2732A32,768-BIT ERASABLE PROGRAM
Page 247 and 248: TMS2732A32,768·BIT ERASABLE PROGRA
Page 249 and 250: MOSLSITMS276465,536-BI1 ERASABLE PR
Page 251: TMS276465,536·BIT ERASABLE PROGRAM
Page 255 and 256: TMS276465,536-BIT ERASABLE PROGRAMM
Page 257 and 258: MOSLSITMS27128131,072·BIT ERASABLE
Page 259 and 260: TMS27128131,072·BI1 ERASABLE PROGR
Page 261 and 262: TMS27128131,072·BIT ERASABLE PROGR
Page 263 and 264: TMS27128131,072·BIT ERASABLE PROGR
Page 265 and 266: Alphanumeric Index, Table of Conten
Page 267 and 268: MOSLSITMS46648192·WORD BY 8·BIT R
Page 269 and 270: TMS46648192·WORD BY 8·BIT READ·O
Page 273 and 274: MOSLSITMS47324096~WORD BY B·BIT RE
Page 279 and 280: MOSLSITMS47648192·WORD BY 8·BIT R
Page 285 and 286: MOSLSI, TMS49648192·WORD BY 8·BIT
Page 293 and 294: MOSLSITMS4712816,384·WORD BY 8·BI
Page 295 and 296: TMS4712816,384·WORD BY 8·BIT READ
Page 297 and 298: TMS4712816,384-WORD BY 8-BIT READ-O
Page 299 and 300: TMS4712816,384·WORD BY 8·BIT READ
Page 301 and 302: TMS4712816,384-WORD BY 8-BIT READ-O
Page 303 and 304:
MOSLSITMS4725632.768·WORD BY 8·BI
Page 305 and 306:
TMS4725632.768·WORD BY 8·BIT READ
Page 307 and 308:
TMS4725632,768·WORD BY 8·BIT READ
Page 309 and 310:
TMS4725632,768-WORD BY 8-BIT READ-O
Page 311 and 312:
TMS4725632,768-WORD BY 8-BIT READ-O
Page 313 and 314:
Page 315 and 316:
MOSLSITMS2114, TMS2114L1024·WORD B
Page 317 and 318:
TMS2114, TMS2114L1024·WDRD BY 4·B
Page 319 and 320:
TMS2114. TMS2114L1024·WORD BV 4·B
Page 321 and 322:
ADVANCED MEMORYDEVELOPMENT•Fast A
Page 323 and 324:
TMS2150CACHE ADDRESS COMPARATORabso
Page 325 and 326:
TMS2150CACHE ADDRESS COMPARATORPARA
Page 327 and 328:
MOSLSITMS40162048·WORD BY 8·BIT S
Page 329 and 330:
TMS4016204H-WORD BY H-BIT STATIC RA
Page 331 and 332:
TMS40162048-WDRD BY 8-BIT STATIC RA
Page 333 and 334:
MOSLSITMS4044, TMS40L444096-WORD BY
Page 335 and 336:
TMS4044, TMS40L444096·WORD BY 1·B
Page 337 and 338:
TMS4044, TMS40L444096·WORD BY l·B
Page 339 and 340:
MILITARYCMOSLSISMJ55172048-WORD BY
Page 341 and 342:
SMJ5517204a·WORD BY a·BIT STATIC
Page 343 and 344:
SMJ55172048·WORD BY 8·BIT STATIC
Page 345 and 346:
SMJ55172048-WDRD BY 8-BIT STATIC RA
Page 347 and 348:
SMJ5517204B·WORD BY B·BIT STATIC
Page 349:
Page 352 and 353:
However, the TMS 4164 provides the
Page 354 and 355:
EXPANSION OF 3242 FOR 256-CYCLE REF
Page 356 and 357:
•9-6
Page 358 and 359:
PAD OPENINGIN OVERCOATPADMETALPADME
Page 360 and 361:
Figure 5 shows how the driver outpu
Page 362 and 363:
cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
Page 364 and 365:
The falling edge of RAS causes R 1
Page 366 and 367:
~--------::~~:~:~~~:--------~~7,34(
Page 368 and 369:
J-Lead AdvantageTexas Instruments P
Page 370 and 371:
Surface Mount Component Availabilit
Page 372 and 373:
fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
Page 374 and 375:
l>'C'2.ri'Q),..o·:::Jen5'....... o
Page 376 and 377:
l>"C'2..(i"Dl...0":=(I)5"....o...3D
Page 378 and 379:
An external refresh counter has bee
Page 380 and 381:
l>'C'CC:)"Q).-+o·::::sen:ro ... ""
Page 382 and 383:
uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
Page 384 and 385:
DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
Page 386 and 387:
B. If dynamic RAM refresh is enable
Page 388 and 389:
•9-38
Page 390 and 391:
The TMS4416/TMS4500A board is arran
Page 392 and 393:
RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
Page 394 and 395:
9-44
Page 396 and 397:
ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
Page 398 and 399:
The ALE high to ClK low time is giv
Page 400 and 401:
ClKALEACXRASMAO-MA7CASREFREQROY•
Page 402 and 403:
CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
Page 404 and 405:
UO!leWJOJUI SUOlle:ludd"com~'~,i'74
Page 406 and 407:
coen(J)CLOCKWRITEREADROYALEA14-A5MS
Page 408 and 409:
. Access Grant CyclesThe precharge
Page 410 and 411:
whereta(C)tp(BFR)(-103 + tc2 - tp(B
Page 412 and 413:
•9-62
Page 414 and 415:
tt(REH)TCHLLtAEL-RELRAS rise time (
Page 416 and 417:
. Refresh CyclesOn refresh cycles t
Page 418 and 419:
wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
Page 420 and 421:
R/W approach does a normal read-mod
Page 422 and 423:
II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
Page 424 and 425:
ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
Page 426 and 427:
4. Row address setup and hold timeT
Page 428 and 429:
CLKrWRITE -------I.~ ..~---REFRESH-
Page 430 and 431:
The read access time on access gran
Page 432 and 433:
implementations in order to relieve
Page 434 and 435:
"C'2..c:rm...o·j(I)....5'o3...mo·
Page 436 and 437:
RELATIVE MEMORY SIZEARCHIVAL STORAG
Page 438 and 439:
increments till satisfied. This pro
Page 440 and 441:
In the example shown in Figure 5, t
Page 442 and 443:
»'C"E..crQ)r+0':::Jtil:;-....o...3
Page 444 and 445:
•9-94
Page 447 and 448:
184LOGIC SYMBOLS1. INTRODUCTIONEXPl
Page 449 and 450:
LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
Page 451 and 452:
lOGIC SYMBOLSWhen RAS goes low, it
Page 453 and 454:
Page 455 and 456:
MECHANICAL DATAgeneralElectrical ch
Page 457 and 458:
MECHANICAL DATAceramic packages -ce
Page 459 and 460:
MECHANICAL DATAplastic packages (N
Page 461 and 462:
MECHANICAL DATAceramic chip carrier
Page 463 and 464:
Texas InstrumentsSemiconductor Tech
Page 465 and 466:
TI Sales Offices TI DistributorsALA
Page 468:
Printed in U.S.A.•TEXASINSTRUMENT
show all

1 - Al Kossow's Bitsavers

Create successful ePaper yourself

Delete template?

Save as template?