1 - Al Kossow's Bitsavers

More documents

Recommendations

Info

1MS276465,536-B11 ERASABLE PROGRAMMABLE READ-ONLY MEMORYFUNCTION(PINS)E(20)G(22)PGM(27)Vpp(1)Vee(28)01-08ReadMODEOutput Power Down Fast Program InhibitDisable (Standby) Programming Verification ProgrammingVIL X VIH VIL VIL VIHVIL VIH XVIH VIL XVIH VIH X VIL VIH XVee Vee Vee Vpp Vpp XVee Vee Vee Vee Vee Vee(11 to 13, 0 HI-Z HI-Z 0 0 HI-Z15 to 19)readThe dual control pins (E and G) must have low-level TTL signals in order to provide data at the outputs. ehip eanble(E) should be used for device selection. Output enable (G) should be used to gate data to the output pins.power downThe power-down mode reduces the maximum active current from 100 mA to 35 mAo A TTL high-level signal appliedto E selects the power-down mode. In this mode, the outputs assume a high-impedance state, independent of G.m."::rJo3:cm
TMS276465,536·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORYmUltiple device programmingSeveral TMS2764's can be programmed simultaneously by connecting them in parallel and following the programmingsequence previously described.program inhibitIThe program inhibit is useful when programming multiple TMS2764's connected in parallel with different data. Programinhibit can be implemented by applying a high-level signal to E or PGM of the device that is not to be programmed.DEVICEFAILEDINCREMENTADDRESSDEVICEFAILEDU)Q)(,)':;Q)c:2:oa:a.wFIGURE 1 -FAST PROGRAMMING FLOWCHARTTEXASINSTRUMENlSPOST OFFICE BOX 225012 • DALLAS. TEXAS 752656-55
Page 1:
SMYOOO2.,MOS MemoryData Book1984II
Page 9 and 10:
ALPHANUMERIC INDEX TO DATA SHEETSSM
Page 11 and 12:
TABLE OF CONTENTSALPHANUMERIC INDEX
Page 13 and 14:
MOSLSIRAMs, ROMs, EPROMsSELECTION G
Page 15 and 16:
If you want to give it a try for yo
Page 17 and 18:
INTERCHANGEABILITY GUIDEPART 1 -ALT
Page 19 and 20:
INTERCHANGEABILITY GUIDEFUJITSUMB 8
Page 21 and 22:
INTERCHANGEABILITY GUIDEMOTOROLAMCM
Page 23 and 24:
INTERCHANGEABILITY GUIDETOSHIBATMM
Page 25 and 26:
INTERCHANGEABILITY GUIDESTATIC RAMS
Page 27 and 28:
Alphanumeric Index, Table of Conten
Page 29 and 30:
GLOSSARY fTIMING CONVENTIONS/DATA S
Page 31 and 32:
GLOSSARY/TIMING CONVENTIONS/DATA SH
Page 33 and 34:
GLOSSARY!TIMING CONVENTIONS/DATA SH
Page 35 and 36:
Page 37 and 38:
Page 39 and 40:
Page 41 and 42:
MOSLSITMS411616,384-811 DYNAMIC RAN
Page 43 and 44:
TMS411616,384·811 DYNAMIC RANDOM·
Page 45 and 46:
1MS411616,384-811 DYNAMIC RANDOM-AC
Page 47 and 48:
TMS411616.384·81T DYNAMIC RANDOM·
Page 49 and 50:
Page 51 and 52:
zIiADDRESSES~!.....RASCASwDO"*. i,*
Page 53 and 54:
TMS411616,384-81T DYNAMIC RANDOM-AC
Page 55 and 56:
MOSLSITMS416165,536-81T MULTIPORT M
Page 57 and 58:
TMS416165,536-811 MULTIPORT MEMORYf
Page 59 and 60:
TMS416165,536-BIT MULTIPORT MEMORYs
Page 61 and 62:
TMS416165,536-0IT MULTIPORT MEMORYc
Page 63 and 64:
TMS416165,536·BIT MUL TIPORT MEMOR
Page 65 and 66:
TMS416165,536 o BIT MUL TIPORT MEMO
Page 67 and 68:
TMS416165,536·811 MULTIPORT MEMORY
Page 69 and 70:
zI[~~~co,.. twiRL) _,RAS:::~ SI l L
Page 71 and 72:
TMS416165,536·BIT MULTIPORT MEMORY
Page 73 and 74:
~ ___TMS416165.536-BIT MUL TIPORT M
Page 75 and 76:
0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
Page 77 and 78:
TMS416165,536-8IT MULTIPORT MEMORY1
Page 79 and 80:
MOSLSITMS4164, SMJ416465,536-8IT DY
Page 81 and 82:
TMS4164, SMJ416465,536-811. DYNAMIC
Page 83 and 84:
TMS416465,536-811 DYNAMIC RANDOM-AC
Page 85 and 86:
Page 87 and 88:
TMS416465,536-811 DYNAMIC RANDOM-AC
Page 89 and 90:
SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 91 and 92:
SMJ416465,536-81T DYNAMIC RANDOM-AC
Page 93 and 94:
SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 95 and 96:
TMS4164, SMJ416465,536·81T DYNAMIC
Page 97 and 98:
TMS4164, SMJ416465,536·8IT DYNAMIC
Page 99 and 100:
z~~gz~.J:>.c1J
Page 101 and 102:
Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
Page 103 and 104:
MOSLSITMS4256. TMS4257262.144·8IT
Page 105 and 106:
TMS4256, TMS4257262,144·8IT DYNAMI
Page 107 and 108:
TMS4256, TMS4257262,144-8IT DYNAMIC
Page 109 and 110:
Page 111 and 112:
TMS4257262.144·8IT DYNAMIC RANDOM
Page 113 and 114:
TMS4256, TMS4257262,144·BIT DYNAMI
Page 115 and 116:
Page 117 and 118:
TMS4257262,144·81T DYNAMIC RANDOM
Page 119 and 120:
Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
Page 121 and 122:
i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
Page 123 and 124:
Page 125 and 126:
MOSLSITMS4416. SMJ441616.384·WORD
Page 127 and 128:
TMS4416, SMJ441616,384·WORD BY 4·
Page 129 and 130:
TMS441616,384-WORD BY 4-BI1 DYNAMIC
Page 131 and 132:
TMS441616,384-WORD BY 4-BIT DYNAMIC
Page 133 and 134:
Page 135 and 136:
SMJ441616,384·WORD BY 4·BIT DYNAM
Page 137 and 138:
SMJ441616,384-WORD BY 4-B11 DYNAMIC
Page 139 and 140:
1MS4416, SMJ441616,384·WORD BY 4·
Page 141 and 142:
TMS4416, SMJ441616,384·WORD BY 4·
Page 143 and 144:
z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
Page 145 and 146:
1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
Page 147 and 148:
MOSLSITMS446465,536-WORD BY 4-BIT D
Page 149 and 150:
TMS446465,536-WORD 8Y 4-81T DYNAMIC
Page 151 and 152:
TMS446465,536·WORD BY 4·BIT DYNAM
Page 153 and 154:
1MS446465,536·WORD BY 4·B11 DYNAM
Page 155 and 156:
TMS446465,536·WORD BY 4·BIT DYNAM
Page 157 and 158:
Page 159 and 160:
RASCAS----{! '.,ReIVIH i~VIL I tRLC
Page 161 and 162:
~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
Page 163 and 164:
~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
Page 165 and 166:
MEMORY SUPPORTLSITMS4500ADYNAMIC RA
Page 167 and 168:
TMS4500ADYNAMIC RAM CONTROLLERpin d
Page 169 and 170:
TMS4500ADYNAMIC RAM CONTROLLERarbit
Page 171 and 172:
TMS4500ADYNAMIC RAM CONTROLLERswitc
Page 173 and 174:
TMS4500ADYNAMIC RAM CONTROLLERacces
Page 175 and 176:
TMS4500ADYNAMIC RAM CONTROLLERoutpu
Page 177 and 178:
TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 179 and 180:
TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 181 and 182:
Page 183 and 184:
•••••MOSLSI65,536 X 4 Org
Page 185 and 186:
TM4164EC465,536 BY 4·BIT DYNAMIC R
Page 187 and 188:
MOSLSITM4164EL965,536 BY 9·BIT DYN
Page 189 and 190:
TM4164EL965,536 BY 9-BIT DYNAMIC RA
Page 191 and 192:
••••••••0MOSLSI65,5
Page 193 and 194:
TM4164FL865,536 BY 8·BIT DYNAMIC R
Page 195 and 196:
Page 197 and 198:
MOSLSITMS2516. SMJ251616.384-BIT ER
Page 199 and 200: TMS2516, SMJ251616,384-BIT ERASABLE
Page 201 and 202: TMS251616,384·BIT ERASABLE PROGRAM
Page 203 and 204: SMJ251616,384-BIT ERASABLE PROGRAMM
Page 205 and 206: o 441MS2516, SMJ251616,384·B11 ERA
Page 207 and 208: MOSLSITMS2532, SMJ253232,768·BIT E
Page 211 and 212: TMS253232,768-BI1 ERASABLE PROGRAMM
Page 217 and 218: MOSLSITMS2564, SMJ256465,536-BIT ER
Page 221 and 222: TMS256465,536-BIT ERASABLE PROGRAMM
Page 225 and 226: TMS2564 r SMJ256465 r536-BIT ERASAB
Page 227 and 228: MOSLSITMS2708, TMS27L08, SMJ2708, S
Page 229 and 230: TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
Page 231 and 232: TMS2708. TMS27L081024·WORD BY 8·B
Page 233 and 234: SMJ2708, SMJ27L081024·WORD BY 8·B
Page 235 and 236: TMS2708, TMS27L08SMJ2708, SMJ27L081
Page 237 and 238: MOSLSITMS27162048·WORD BY 8·BIT E
Page 239 and 240: TMS27162048·WORD BY 8·BIT ERASABL
Page 241 and 242: TMS27162048-WORD BY 8-BIT ERASABLEP
Page 243 and 244: TMS2732A32,76B-BIT ERASABLE PROGRAM
Page 245 and 246: TMS2732A32,768-BIT ERASABLE PROGRAM
Page 247 and 248: TMS2732A32,768·BIT ERASABLE PROGRA
Page 249: MOSLSITMS276465,536-BI1 ERASABLE PR
Page 257 and 258: MOSLSITMS27128131,072·BIT ERASABLE
Page 259 and 260: TMS27128131,072·BI1 ERASABLE PROGR
Page 261 and 262: TMS27128131,072·BIT ERASABLE PROGR
Page 263 and 264: TMS27128131,072·BIT ERASABLE PROGR
Page 265 and 266: Alphanumeric Index, Table of Conten
Page 267 and 268: MOSLSITMS46648192·WORD BY 8·BIT R
Page 269 and 270: TMS46648192·WORD BY 8·BIT READ·O
Page 273 and 274: MOSLSITMS47324096~WORD BY B·BIT RE
Page 279 and 280: MOSLSITMS47648192·WORD BY 8·BIT R
Page 285 and 286: MOSLSI, TMS49648192·WORD BY 8·BIT
Page 293 and 294: MOSLSITMS4712816,384·WORD BY 8·BI
Page 295 and 296: TMS4712816,384·WORD BY 8·BIT READ
Page 297 and 298: TMS4712816,384-WORD BY 8-BIT READ-O
Page 299 and 300: TMS4712816,384·WORD BY 8·BIT READ
Page 301 and 302:
TMS4712816,384-WORD BY 8-BIT READ-O
Page 303 and 304:
MOSLSITMS4725632.768·WORD BY 8·BI
Page 305 and 306:
TMS4725632.768·WORD BY 8·BIT READ
Page 307 and 308:
TMS4725632,768·WORD BY 8·BIT READ
Page 309 and 310:
Page 311 and 312:
Page 313 and 314:
Page 315 and 316:
MOSLSITMS2114, TMS2114L1024·WORD B
Page 317 and 318:
TMS2114, TMS2114L1024·WDRD BY 4·B
Page 319 and 320:
TMS2114. TMS2114L1024·WORD BV 4·B
Page 321 and 322:
ADVANCED MEMORYDEVELOPMENT•Fast A
Page 323 and 324:
TMS2150CACHE ADDRESS COMPARATORabso
Page 325 and 326:
TMS2150CACHE ADDRESS COMPARATORPARA
Page 327 and 328:
MOSLSITMS40162048·WORD BY 8·BIT S
Page 329 and 330:
TMS4016204H-WORD BY H-BIT STATIC RA
Page 331 and 332:
TMS40162048-WDRD BY 8-BIT STATIC RA
Page 333 and 334:
MOSLSITMS4044, TMS40L444096-WORD BY
Page 335 and 336:
TMS4044, TMS40L444096·WORD BY 1·B
Page 337 and 338:
TMS4044, TMS40L444096·WORD BY l·B
Page 339 and 340:
MILITARYCMOSLSISMJ55172048-WORD BY
Page 341 and 342:
SMJ5517204a·WORD BY a·BIT STATIC
Page 343 and 344:
SMJ55172048·WORD BY 8·BIT STATIC
Page 345 and 346:
SMJ55172048-WDRD BY 8-BIT STATIC RA
Page 347 and 348:
SMJ5517204B·WORD BY B·BIT STATIC
Page 349:
Page 352 and 353:
However, the TMS 4164 provides the
Page 354 and 355:
EXPANSION OF 3242 FOR 256-CYCLE REF
Page 356 and 357:
•9-6
Page 358 and 359:
PAD OPENINGIN OVERCOATPADMETALPADME
Page 360 and 361:
Figure 5 shows how the driver outpu
Page 362 and 363:
cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
Page 364 and 365:
The falling edge of RAS causes R 1
Page 366 and 367:
~--------::~~:~:~~~:--------~~7,34(
Page 368 and 369:
J-Lead AdvantageTexas Instruments P
Page 370 and 371:
Surface Mount Component Availabilit
Page 372 and 373:
fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
Page 374 and 375:
l>'C'2.ri'Q),..o·:::Jen5'....... o
Page 376 and 377:
l>"C'2..(i"Dl...0":=(I)5"....o...3D
Page 378 and 379:
An external refresh counter has bee
Page 380 and 381:
l>'C'CC:)"Q).-+o·::::sen:ro ... ""
Page 382 and 383:
uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
Page 384 and 385:
DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
Page 386 and 387:
B. If dynamic RAM refresh is enable
Page 388 and 389:
•9-38
Page 390 and 391:
The TMS4416/TMS4500A board is arran
Page 392 and 393:
RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
Page 394 and 395:
9-44
Page 396 and 397:
ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
Page 398 and 399:
The ALE high to ClK low time is giv
Page 400 and 401:
ClKALEACXRASMAO-MA7CASREFREQROY•
Page 402 and 403:
CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
Page 404 and 405:
UO!leWJOJUI SUOlle:ludd"com~'~,i'74
Page 406 and 407:
coen(J)CLOCKWRITEREADROYALEA14-A5MS
Page 408 and 409:
. Access Grant CyclesThe precharge
Page 410 and 411:
whereta(C)tp(BFR)(-103 + tc2 - tp(B
Page 412 and 413:
•9-62
Page 414 and 415:
tt(REH)TCHLLtAEL-RELRAS rise time (
Page 416 and 417:
. Refresh CyclesOn refresh cycles t
Page 418 and 419:
wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
Page 420 and 421:
R/W approach does a normal read-mod
Page 422 and 423:
II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
Page 424 and 425:
ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
Page 426 and 427:
4. Row address setup and hold timeT
Page 428 and 429:
CLKrWRITE -------I.~ ..~---REFRESH-
Page 430 and 431:
The read access time on access gran
Page 432 and 433:
implementations in order to relieve
Page 434 and 435:
"C'2..c:rm...o·j(I)....5'o3...mo·
Page 436 and 437:
RELATIVE MEMORY SIZEARCHIVAL STORAG
Page 438 and 439:
increments till satisfied. This pro
Page 440 and 441:
In the example shown in Figure 5, t
Page 442 and 443:
»'C"E..crQ)r+0':::Jtil:;-....o...3
Page 444 and 445:
•9-94
Page 447 and 448:
184LOGIC SYMBOLS1. INTRODUCTIONEXPl
Page 449 and 450:
LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
Page 451 and 452:
lOGIC SYMBOLSWhen RAS goes low, it
Page 453 and 454:
Page 455 and 456:
MECHANICAL DATAgeneralElectrical ch
Page 457 and 458:
MECHANICAL DATAceramic packages -ce
Page 459 and 460:
MECHANICAL DATAplastic packages (N
Page 461 and 462:
MECHANICAL DATAceramic chip carrier
Page 463 and 464:
Texas InstrumentsSemiconductor Tech
Page 465 and 466:
TI Sales Offices TI DistributorsALA
Page 468:
Printed in U.S.A.•TEXASINSTRUMENT
show all

1 - Al Kossow's Bitsavers

Create successful ePaper yourself

Delete template?

Save as template?