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1MS276465,536-B11 ERASABLE PROGRAMMABLE READ-ONLY MEMORYFUNCTION(PINS)E(20)G(22)PGM(27)Vpp(1)Vee(28)01-08ReadMODEOutput Power Down Fast Program InhibitDisable (Standby) Programming Verification ProgrammingVIL X VIH VIL VIL VIHVIL VIH XVIH VIL XVIH VIH X VIL VIH XVee Vee Vee Vpp Vpp XVee Vee Vee Vee Vee Vee(11 to 13, 0 HI-Z HI-Z 0 0 HI-Z15 to 19)readThe dual control pins (E and G) must have low-level TTL signals in order to provide data at the outputs. ehip eanble(E) should be used for device selection. Output enable (G) should be used to gate data to the output pins.power downThe power-down mode reduces the maximum active current from 100 mA to 35 mAo A TTL high-level signal appliedto E selects the power-down mode. In this mode, the outputs assume a high-impedance state, independent of G.m."::rJo3:cm
TMS276465,536·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORYmUltiple device programmingSeveral TMS2764's can be programmed simultaneously by connecting them in parallel and following the programmingsequence previously described.program inhibitIThe program inhibit is useful when programming multiple TMS2764's connected in parallel with different data. Programinhibit can be implemented by applying a high-level signal to E or PGM of the device that is not to be programmed.DEVICEFAILEDINCREMENTADDRESSDEVICEFAILEDU)Q)(,)':;Q)c:2:oa:a.wFIGURE 1 -FAST PROGRAMMING FLOWCHARTTEXASINSTRUMENlSPOST OFFICE BOX 225012 • DALLAS. TEXAS 752656-55
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
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TMS416165,536-811 MULTIPORT MEMORYf
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TMS416165,536-BIT MULTIPORT MEMORYs
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TMS416165,536-0IT MULTIPORT MEMORYc
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TMS416165,536·BIT MUL TIPORT MEMOR
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TMS416165,536 o BIT MUL TIPORT MEMO
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TMS416165,536·811 MULTIPORT MEMORY
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zI[~~~co,.. twiRL) _,RAS:::~ SI l L
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TMS416165,536·BIT MULTIPORT MEMORY
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~ ___TMS416165.536-BIT MUL TIPORT M
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0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
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TMS416165,536-8IT MULTIPORT MEMORY1
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MOSLSITMS4164, SMJ416465,536-8IT DY
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TMS4164, SMJ416465,536-811. DYNAMIC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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SMJ416465,536-81T DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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TMS4164, SMJ416465,536·81T DYNAMIC
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TMS4164, SMJ416465,536·8IT DYNAMIC
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z~~gz~.J:>.c1J
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Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
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MOSLSITMS4256. TMS4257262.144·8IT
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TMS4256, TMS4257262,144·8IT DYNAMI
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TMS4256, TMS4257262,144-8IT DYNAMIC
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TMS4257262.144·8IT DYNAMIC RANDOM
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TMS4256, TMS4257262,144·BIT DYNAMI
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TMS4257262,144·81T DYNAMIC RANDOM
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Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
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i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
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MOSLSITMS4416. SMJ441616.384·WORD
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TMS4416, SMJ441616,384·WORD BY 4·
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TMS441616,384-WORD BY 4-BI1 DYNAMIC
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TMS441616,384-WORD BY 4-BIT DYNAMIC
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SMJ441616,384·WORD BY 4·BIT DYNAM
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SMJ441616,384-WORD BY 4-B11 DYNAMIC
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1MS4416, SMJ441616,384·WORD BY 4·
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TMS4416, SMJ441616,384·WORD BY 4·
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z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
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1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
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MOSLSITMS446465,536-WORD BY 4-BIT D
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TMS446465,536-WORD 8Y 4-81T DYNAMIC
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TMS446465,536·WORD BY 4·BIT DYNAM
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1MS446465,536·WORD BY 4·B11 DYNAM
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TMS446465,536·WORD BY 4·BIT DYNAM
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RASCAS----{! '.,ReIVIH i~VIL I tRLC
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~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
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~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
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MEMORY SUPPORTLSITMS4500ADYNAMIC RA
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TMS4500ADYNAMIC RAM CONTROLLERpin d
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TMS4500ADYNAMIC RAM CONTROLLERarbit
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERacces
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TMS4500ADYNAMIC RAM CONTROLLERoutpu
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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•••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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MOSLSITMS2516. SMJ251616.384-BIT ER
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Page 201 and 202: TMS251616,384·BIT ERASABLE PROGRAM
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Page 205 and 206: o 441MS2516, SMJ251616,384·B11 ERA
Page 207 and 208: MOSLSITMS2532, SMJ253232,768·BIT E
Page 211 and 212: TMS253232,768-BI1 ERASABLE PROGRAMM
Page 217 and 218: MOSLSITMS2564, SMJ256465,536-BIT ER
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Page 225 and 226: TMS2564 r SMJ256465 r536-BIT ERASAB
Page 227 and 228: MOSLSITMS2708, TMS27L08, SMJ2708, S
Page 229 and 230: TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
Page 231 and 232: TMS2708. TMS27L081024·WORD BY 8·B
Page 233 and 234: SMJ2708, SMJ27L081024·WORD BY 8·B
Page 235 and 236: TMS2708, TMS27L08SMJ2708, SMJ27L081
Page 237 and 238: MOSLSITMS27162048·WORD BY 8·BIT E
Page 239 and 240: TMS27162048·WORD BY 8·BIT ERASABL
Page 241 and 242: TMS27162048-WORD BY 8-BIT ERASABLEP
Page 243 and 244: TMS2732A32,76B-BIT ERASABLE PROGRAM
Page 245 and 246: TMS2732A32,768-BIT ERASABLE PROGRAM
Page 247 and 248: TMS2732A32,768·BIT ERASABLE PROGRA
Page 249: MOSLSITMS276465,536-BI1 ERASABLE PR
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Page 259 and 260: TMS27128131,072·BI1 ERASABLE PROGR
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Page 265 and 266: Alphanumeric Index, Table of Conten
Page 267 and 268: MOSLSITMS46648192·WORD BY 8·BIT R
Page 269 and 270: TMS46648192·WORD BY 8·BIT READ·O
Page 273 and 274: MOSLSITMS47324096~WORD BY B·BIT RE
Page 279 and 280: MOSLSITMS47648192·WORD BY 8·BIT R
Page 285 and 286: MOSLSI, TMS49648192·WORD BY 8·BIT
Page 293 and 294: MOSLSITMS4712816,384·WORD BY 8·BI
Page 295 and 296: TMS4712816,384·WORD BY 8·BIT READ
Page 297 and 298: TMS4712816,384-WORD BY 8-BIT READ-O
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TMS4712816,384-WORD BY 8-BIT READ-O
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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TMS4725632,768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
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CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
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UO!leWJOJUI SUOlle:ludd"com~'~,i'74
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coen(J)CLOCKWRITEREADROYALEA14-A5MS
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. Access Grant CyclesThe precharge
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whereta(C)tp(BFR)(-103 + tc2 - tp(B
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•9-62
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tt(REH)TCHLLtAEL-RELRAS rise time (
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. Refresh CyclesOn refresh cycles t
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wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
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R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
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Texas InstrumentsSemiconductor Tech
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TI Sales Offices TI DistributorsALA
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Printed in U.S.A.•TEXASINSTRUMENT
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